公开(公告)号：US11029206B2

公开(公告)日：2021-06-08

申请号：US16670976

申请日：2019-10-31

Applicant: Applied Materials, Inc.

Inventor： Jinxin Fu ,  Rutger Meyer Timmerman Thijssen ,  Ludovic Godet

IPC: G01J3/28 ,  G06F3/03 ,  G02B6/12 ,  G01J3/18 ,  H01P1/16 ,  G06T19/00

Abstract: Embodiments described herein relate to apparatus for measuring and characterizing performance of augmented and virtual reality waveguide structures utilizing glass substrates. The waveguide performance measuring systems generally include a light source configured to direct light towards an incoupling grating area on waveguide and one or more light detectors configured to collect light from an outcoupling grating area on a second side of the waveguide. The light source and one or more light detectors are disposed on one or more adjustable stages positioned about the waveguide. In certain embodiments, the one or more adjustable stages are configured to move in a linear fashion or revolve and/or rotate around the waveguide in an orbital motion.

公开(公告)号：US10927449B2

公开(公告)日：2021-02-23

申请号：US15857384

申请日：2017-12-28

Applicant: Applied Materials, Inc.

Inventor： Jingjing Liu ,  Ludovic Godet ,  Srinivas D. Nemani ,  Yongmei Chen ,  Anantha K. Subramani

IPC: C23C14/34 ,  H01L21/265 ,  H01J37/34 ,  C23C14/50 ,  C23C14/35 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223

Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

公开(公告)号：US10825665B2

公开(公告)日：2020-11-03

申请号：US14703922

申请日：2015-05-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Huixiong Dai ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Nitin Krishnarao Ingle

IPC: H01J37/32 ,  H01J37/305 ,  H01J37/317

Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.

公开(公告)号：US20190157134A1

公开(公告)日：2019-05-23

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US10276369B2

公开(公告)日：2019-04-30

申请号：US15831342

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC: H01J37/32 ,  H01L21/02 ,  C23C14/04 ,  H01L21/033 ,  H01L21/67

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US10157740B1

公开(公告)日：2018-12-18

申请号：US15624648

申请日：2017-06-15

Applicant: Applied Materials, Inc.

Inventor： Christine Y. Ouyang ,  Ludovic Godet

IPC: H01L23/495 ,  H01L21/027 ,  H01L21/285 ,  H01L21/02 ,  H01L21/32 ,  C23C16/455 ,  B05D1/00 ,  B05D3/02

Abstract: Methods for depositing desired materials formed on different locations of a substrate with different materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes disposing organic materials on a surface of a substrate, performing a thermal treatment process to form polymer brush materials from the organic materials selective on a first region of the substrate, and selectively forming a material layer on a second region of the substrate uncovered by the polymer brush materials.

公开(公告)号：US09927709B2

公开(公告)日：2018-03-27

申请号：US15290992

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Christine Y. Ouyang ,  Sang Ki Nam ,  Ludovic Godet

IPC: G03F7/38 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/70325

Abstract: Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.

公开(公告)号：US09911594B2

公开(公告)日：2018-03-06

申请号：US15346306

申请日：2016-11-08

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Ellie Y. Yieh ,  Ludovic Godet ,  Yin Fan

IPC: H01L21/31 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3115 ,  H01J37/32

CPC classification number: H01L21/02304 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32422 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31155 ,  H01L29/66795 ,  H01L29/66803

Abstract: Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer.

公开(公告)号：US09865464B2

公开(公告)日：2018-01-09

申请号：US15348170

申请日：2016-11-10

Applicant: Applied Materials, Inc.

Inventor： Yongmei Chen ,  Christopher S. Ngai ,  Jingjing Liu ,  Jun Xue ,  Chentsau Ying ,  Ludovic Godet

IPC: H01L21/033 ,  H01L29/49 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/51 ,  H01L21/02 ,  H01L21/311 ,  C23C16/27 ,  H01L27/11524 ,  H01L27/1157

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/27 ,  C23C16/274 ,  C23C16/279 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/49 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518

Abstract: A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

公开(公告)号：US20170271196A1

公开(公告)日：2017-09-21

申请号：US15461847

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).