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    Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods
    94.
    发明授权
    Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods 有权
    使用多孔层形成绝缘体上半导体结构的方法和通过这些方法形成的半导体结构的方法

    公开(公告)号：US07928436B2

    公开(公告)日：2011-04-19

    申请号：US12120455

    申请日：2008-05-14

    申请人： Kangguo Cheng ,  Brian Joseph Greene ,  Jack Allan Mandelman

    发明人： Kangguo Cheng ,  Brian Joseph Greene ,  Jack Allan Mandelman

    IPC分类号： H01L29/04 ,  H01L29/10

    CPC分类号： H01L21/76251 ,  H01L21/76245 ,  Y10S438/933

    摘要： A semiconductor structure that includes a monocrystalline germanium-containing layer, preferably substantially pure germanium, a substrate, and a buried insulator layer separating the germanium-containing layer from the substrate. A porous layer, which may be porous silicon, is formed on a substrate and a germanium-containing layer is formed on the porous silicon layer. The porous layer may be converted to a layer of oxide, which provides the buried insulator layer. Alternatively, the germanium-containing layer may be transferred from the porous layer to an insulating layer on another substrate. After the transfer, the insulating layer is buried between the latter substrate and the germanium-containing layer.

    摘要翻译： 一种半导体结构，其包括单晶含锗层，优选基本上纯的锗，衬底和将锗含量层与衬底分离的掩埋绝缘体层。 在基板上形成可以是多孔硅的多孔层，在多孔硅层上形成含锗层。 多孔层可以转化成一层氧化物，这提供了埋层绝缘体层。 或者，含锗层可以从多孔层转移到另一衬底上的绝缘层。 在转移之后，绝缘层被埋在后面的衬底和含锗层之间。

    Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures
    95.
    发明授权
    Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures 失效
    具有自对准掺杂区域的半导体器件结构和用于形成这种半导体器件结构的方法

    公开(公告)号：US07898014B2

    公开(公告)日：2011-03-01

    申请号：US11393142

    申请日：2006-03-30

    申请人： Kangguo Cheng ,  Louis Lu-Chen Hsu ,  Jack Allan Mandelman

    发明人： Kangguo Cheng ,  Louis Lu-Chen Hsu ,  Jack Allan Mandelman

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10841 ,  H01L27/10864

    摘要： Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures. The semiconductor structure comprises first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate bordering a sidewall of a trench. An intervening region of the semiconductor material separates the first and second doped regions. A third doped region is defined in the semiconductor material bordering the sidewall of the trench and disposed between the first and second doped regions. The third doped region is doped to have a second conductivity type opposite to the first conductivity type. Methods for forming the doped regions involve depositing either a layer of a material doped with both dopants or different layers each doped with one of the dopants in the trench and, then, diffusing the dopants from the layer or layers into the semiconductor material bordering the trench sidewall.

    摘要翻译： 具有自对准掺杂区域的半导体器件结构和用于形成这种半导体器件结构的方法。 半导体结构包括限定在与沟槽的侧壁相邻的衬底的半导体材料中的第一导电类型的第一和第二掺杂区域。 半导体材料的中间区域分离第一和第二掺杂区域。 第三掺杂区域限定在与沟槽的侧壁接壤并且设置在第一和第二掺杂区域之间的半导体材料中。 第三掺杂区被掺杂以具有与第一导电类型相反的第二导电类型。 用于形成掺杂区域的方法包括沉积掺杂有掺杂剂或不同层的材料的层，每个掺杂剂或不同的层在沟槽中掺杂有一种掺杂剂，然后将掺杂剂从层或层扩散到与沟槽接壤的半导体材料 侧壁。