公开(公告)号：US10026648B2

公开(公告)日：2018-07-17

申请号：US15063644

申请日：2016-03-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: G06F21/00 ,  H01L21/768 ,  G06F21/44 ,  H01L29/78 ,  H01L27/12 ,  H01L21/84 ,  H01L27/112 ,  H01L23/00

Abstract: An integrated circuit includes an array of devices including a physically unclonable function (PUF) for chip authentication. A logic pattern is stored in the devices. The logic pattern is determined in accordance with processing variations during manufacture of the array. The logic pattern is represented with a first state for one or more devices with contact shorts and a second state with one or more devices without contact shorts.

公开(公告)号：US09893022B2

公开(公告)日：2018-02-13

申请号：US15596551

申请日：2017-05-16

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Fei Liu

IPC: H01L23/29 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L23/573 ,  G01T1/02 ,  H01L21/56 ,  H01L23/295 ,  H01L23/57

Abstract: Circuits which self-destruct under radiation are provided. In one aspect, a method for creating a radiation-sensitive circuit is provided. The method includes the step of: connecting an integrated circuit to a power supply and to a ground in parallel with at least one dosimeter device, wherein the dosimeter device is configured to change from being an insulator to being a conductor under radiation. Radiation-sensitive circuits are also provided.

公开(公告)号：US20170373023A1

公开(公告)日：2017-12-28

申请号：US15195149

申请日：2016-06-28

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/57 ,  H01L21/56 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/573 ,  H01L2924/3512

Abstract: A semiconductor chip includes a chip substrate; a self-destructive layer arranged on the chip substrate, the self-destructive layer including a pyrophoric reactant; and a sealant layer arranged on a surface of the self-destructive layer, on sidewalls of the self-destructive layer, and on the chip substrate such that the sealant layer forms a package seal on the semiconductor chip; wherein the pyrophoric reactant ignites spontaneously upon exposure to air.

公开(公告)号：US20170250359A1

公开(公告)日：2017-08-31

申请号：US15594233

申请日：2017-05-12

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0562 ,  H01J21/105 ,  H01L29/0673 ,  H01L51/0017 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0558

Abstract: Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

公开(公告)号：US09650242B2

公开(公告)日：2017-05-16

申请号：US14861358

申请日：2015-09-22

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L21/00 ,  B81C1/00 ,  B81B7/00 ,  C08K5/34

CPC classification number: B81B3/0086 ,  B81B7/0058 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C1/00039 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2203/0764 ,  B82Y10/00 ,  C08K5/34 ,  G06N3/0635 ,  H01L21/00 ,  H01L21/02263 ,  H01L21/30625 ,  H01L21/465 ,  H01L27/092 ,  H01L29/42316 ,  H01L49/00

Abstract: An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

公开(公告)号：US20170081172A1

公开(公告)日：2017-03-23

申请号：US15196207

申请日：2016-06-29

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B7/0058 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C1/00039 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2203/0764 ,  B82Y10/00 ,  C08K5/34 ,  G06N3/0635 ,  H01L21/00 ,  H01L21/02263 ,  H01L21/30625 ,  H01L21/465 ,  H01L27/092 ,  H01L29/42316 ,  H01L49/00

Abstract: An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

公开(公告)号：US20170040217A1

公开(公告)日：2017-02-09

申请号：US15298756

申请日：2016-10-20

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Oki Gunawan

IPC: H01L21/768 ,  H01F7/02 ,  H01L21/283

CPC classification number: H01L21/76897 ,  B82Y40/00 ,  G01D5/24 ,  H01F7/00 ,  H01F7/02 ,  H01F7/0236 ,  H01F7/0247 ,  H01F7/0273 ,  H01F7/0284 ,  H01F7/202 ,  H01L21/02697 ,  H01L21/283 ,  H01L21/76838 ,  H01L21/76892 ,  H01L22/10 ,  H01L23/53276 ,  H01L43/12 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10T29/41 ,  H01L2924/00

Abstract: A magnetic trap is configured to arrange at least one diamagnetic rod. The magnetic trap includes first and second magnets on a substrate that forms the magnetic trap defining a template configured to self-assemble diamagnetic material. Each of the first and second magnets extends along a longitudinal direction to define a magnet length, and contact each other to define a contact line. The first magnet and the second magnet have a diametric magnetization in a direction perpendicular to the contact line and the longitudinal direction so as to generate a longitudinal energy potential that traps the diamagnetic rod along the longitudinal direction.

Abstract translation: 磁阱被配置成布置至少一个反磁性棒。 磁捕集器包括基板上的第一和第二磁体，其形成限定配置成自组装反磁性材料的模板的磁捕集器。 第一和第二磁体中的每一个沿着纵向方向延伸以限定磁体长度，并且彼此接触以限定接触线。 第一磁体和第二磁体在垂直于接触线和纵向的方向上具有直径磁化，以产生沿着纵向方向捕获反磁性棒的纵向能量势。

公开(公告)号：US20170018594A1

公开(公告)日：2017-01-19

申请号：US14802014

申请日：2015-07-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0296

CPC classification number: H01L27/14652 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/032

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps

Abstract translation: 提供了一种用于形成三维多光谱成像传感器的三维多光谱成像传感器和方法。 三维多光谱成像传感器包括具有多层的单片结构。 每个层由用于检测各个不同非重叠波长的光并具有各自不同带隙的光检测材料形成

公开(公告)号：US20160365473A1

公开(公告)日：2016-12-15

申请号：US15246649

申请日：2016-08-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC: H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/062 ,  H01L31/075 ,  H01L31/1864 ,  Y02E10/50

Abstract: The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.

公开(公告)号：US20160359073A1

公开(公告)日：2016-12-08

申请号：US15244077

申请日：2016-08-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

IPC: H01L31/075 ,  H01L31/0392 ,  H01L31/0224

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/062 ,  H01L31/075 ,  H01L31/1864 ,  Y02E10/50

Abstract: The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a silicon substrate by using a highly charged passivation layer on an upper side of the silicon substrate. A positively charged passivation layer comprising hafnium oxide may be formed on an insulating layer covering an upper surface of a p-doped silicon substrate and on a metal contact to induce a strong inversion layer in an upper portion of the p-doped silicon substrate.

Abstract translation: 本发明一般涉及光伏太阳能电池器件，更具体地说，涉及通过在硅衬底的上侧使用高电荷的钝化层来在硅衬底中感应电荷反转的结构和方法。 可以在覆盖p掺杂硅衬底的上表面和金属接触的绝缘层上形成包含氧化铪的带正电荷的钝化层，以在p掺杂硅衬底的上部中诱发强反转层。