摘要:
An object of the present invention is to provide a battery state estimation device and a battery state estimation method which identify parameter of a secondary battery with high accuracy. A current and a terminal voltage of secondary battery are detected, then by using the current measured value and terminal voltage measured value thus detected, the terminal voltage of secondary battery based on predetermined battery model is estimated, and the parameter of the secondary battery is identified such that a difference between terminal voltage measured value and voltage estimated value is converged to zero. In the identifying of parameter of secondary battery, the terminal voltage measured value and terminal voltage estimated value are subjected to filter treatment by low pass filter having a common high frequency breaking characteristic and the terminal voltage measured value and terminal voltage estimated value subjected to the filter treatment are used.
摘要:
A halved sliding bearing is provided, two of which are paired into a cylindrical shape. The halved sliding bearing includes a steel back metal, and a bearing alloy layer, which serves as a sliding surface, on the inside of the steel back metal. A coat layer of Bi or a Bi-based alloy is formed on the outside back surface of the steel back metal. Preferably, the coat layer consists of 1 to 30 mass % of one or more of Sn, Pb, In, Ag and Cu and the balance being Bi and inevitable impurities.
摘要:
An ebullient cooling device having a simple structure and capable of limiting the bubbles to an appropriate volume. The ebullient cooling device for cooling a heat generating element is provided with a plurality of vertically arranged cooling channels comprising a lower channel (2), a middle channel (3) and un upper channel (4). Each cooling channel has cooling fins (12) for guiding a refrigerant to flow in a vertical direction, and a vapor discharge path (16) formed at the side of the cooling fins (12) that is opposite the side in contact with the heat generating element. Furthermore, flow path partition/vapor discharge guiding plates (18) are provided between the cooling channels so that the bubbles that have been generated are guided to the vapor discharge path (16) and prevented from moving into the subsequent cooling channel.
摘要:
Provided is a composite nanometal paste which, when a layer of the paste interposed between upper and lower bodies is sintered in an inert gas under no load until the layer turns to a metal layer, attains a shear bond strength between the upper and lower bodies of 10 MPa or higher.The composite nanometal paste contains, as metallic components, composite metallic nanoparticles comprising metal cores with an average particle diameter of X (nm) and an organic coating layer formed around the circumference, metallic nanofiller particles having an average particle diameter of d (nm), and metallic filler particles having an average particle diameter of D (nm), and satisfies the first relation X
摘要:
There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.
摘要:
A battery charging control device for controlling a power generation device installed in an electric vehicle sets a battery energy management area using a current position of a host vehicle as a reference, detects at least one travelable route within the battery energy management area, calculates a battery energy management upper limit value and a battery energy management lower limit value on the basis of a maximum value and a minimum value of energy values required to travel to respective points on the travelable route from the current position, and calculates a battery energy management width by subtracting the management lower limit value from the management upper limit value. When the battery energy management width is not within a predetermined range, the battery energy management area is modified so as to enter the predetermined range. As a result, battery charging is controlled such that a magnitude relationship between the battery energy management upper limit value and the battery energy management lower limit value does not reverse.
摘要:
Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.
摘要翻译:提供了一种等离子体处理装置,其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜,优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此,防止了不期望的短路和异常放电,并且形成稳定的高频电流路径。
摘要:
In oxidation of a silicon having irregularities, a silicon oxide film having a thickness as small as possible is formed in the side wall as compared with the bottom. A plasma is generated, using a plasma processing apparatus (100) which introduces microwave into a chamber (1) through a plane antenna (31) having plural microwave radiating holes (32), while applying a high-frequency power to a stage (2), under the conditions that the proportion of oxygen in the processing gas is in the range of 0.1 to 50% and the processing pressure is in the range of 1.3 to 667 Pa. By using this plasma, the ratio of the thickness of the silicon oxide film formed on the side wall surfaces of the irregularities to the thickness of the silicon oxide film formed on the bottom wall surfaces of the recessed portions of the irregularities is made not more than 0.6, while the thickness of the silicon oxide films formed on the bottom wall surfaces is not less than 6 nm and not more than 20 nm.
摘要:
A method of manufacturing a cylindrical body, comprising the step of forming the cylindrical body by bending a plate-like work having first projected finger to fourth projected finger at four corned parts and allowing the end faces thereof to abut on each other, wherein the main surface of the cylindrical body on the side where sags are present is formed in an outer peripheral wall surface and the rear surface thereof on the side where the burrs are present is formed in an inner peripheral wall surface, and a first projected part is formed of the first projected finger and the third projected finger and a second projected part is formed of the second projected finger and the fourth projected finger. After the cylindrical body is held by friction stir welding devices, the probe of a friction stir welding tool is buried from the direction of either of the first projected part and the second projected part, and scanned in the direction of the other of the second projected part and the first projected part. The probe is buried and scanned in the state of being displaced to an advancing side.
摘要:
A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.