BATTERY STATE ESTIMATION DEVICE AND BATTERY STATE ESTIMATION METHOD
    91.
    发明申请
    BATTERY STATE ESTIMATION DEVICE AND BATTERY STATE ESTIMATION METHOD 有权
    电池状态估计装置和电池状态估计方法

    公开(公告)号:US20120316812A1

    公开(公告)日:2012-12-13

    申请号:US13393507

    申请日:2011-02-18

    IPC分类号: G01R31/36 G06F19/00

    摘要: An object of the present invention is to provide a battery state estimation device and a battery state estimation method which identify parameter of a secondary battery with high accuracy. A current and a terminal voltage of secondary battery are detected, then by using the current measured value and terminal voltage measured value thus detected, the terminal voltage of secondary battery based on predetermined battery model is estimated, and the parameter of the secondary battery is identified such that a difference between terminal voltage measured value and voltage estimated value is converged to zero. In the identifying of parameter of secondary battery, the terminal voltage measured value and terminal voltage estimated value are subjected to filter treatment by low pass filter having a common high frequency breaking characteristic and the terminal voltage measured value and terminal voltage estimated value subjected to the filter treatment are used.

    摘要翻译: 本发明的目的是提供一种以高精度识别二次电池的参数的电池状态估计装置和电池状态估计方法。 检测二次电池的电流和端子电压,然后通过使用如此检测的电流测量值和端子电压测量值,估计基于预定电池模型的二次电池的端子电压,并且识别二次电池的参数 使得端子电压测量值和电压估计值之间的差被收敛到零。 在二次电池的参数的识别中,端子电压测量值和端子电压估计值通过具有共同的高频断路特性的低通滤波器和经过滤波器的端子电压测量值和端子电压估计值进行滤波处理 使用治疗。

    Sliding bearing
    92.
    发明授权
    Sliding bearing 有权
    滑动轴承

    公开(公告)号:US08235596B2

    公开(公告)日:2012-08-07

    申请号:US12407968

    申请日:2009-03-20

    IPC分类号: F16C9/02

    摘要: A halved sliding bearing is provided, two of which are paired into a cylindrical shape. The halved sliding bearing includes a steel back metal, and a bearing alloy layer, which serves as a sliding surface, on the inside of the steel back metal. A coat layer of Bi or a Bi-based alloy is formed on the outside back surface of the steel back metal. Preferably, the coat layer consists of 1 to 30 mass % of one or more of Sn, Pb, In, Ag and Cu and the balance being Bi and inevitable impurities.

    摘要翻译: 提供了一半的滑动轴承,其中两个成对成圆柱形。 一半的滑动轴承包括钢背金属和用作滑动表面的轴承合金层,在钢背金属的内侧。 在钢背金属的外侧后表面上形成Bi或Bi基合金的涂层。 优选地,涂层由Sn,Pb,In,Ag和Cu中的一种或多种中的1至30质量%组成,余量为Bi和不可避免的杂质。

    EBULLIENT COOLING DEVICE
    93.
    发明申请
    EBULLIENT COOLING DEVICE 审中-公开
    EBULLI冷却装置

    公开(公告)号:US20120111550A1

    公开(公告)日:2012-05-10

    申请号:US13254680

    申请日:2010-03-09

    IPC分类号: F28F1/10

    摘要: An ebullient cooling device having a simple structure and capable of limiting the bubbles to an appropriate volume. The ebullient cooling device for cooling a heat generating element is provided with a plurality of vertically arranged cooling channels comprising a lower channel (2), a middle channel (3) and un upper channel (4). Each cooling channel has cooling fins (12) for guiding a refrigerant to flow in a vertical direction, and a vapor discharge path (16) formed at the side of the cooling fins (12) that is opposite the side in contact with the heat generating element. Furthermore, flow path partition/vapor discharge guiding plates (18) are provided between the cooling channels so that the bubbles that have been generated are guided to the vapor discharge path (16) and prevented from moving into the subsequent cooling channel.

    摘要翻译: 一种沸腾冷却装置,具有简单的结构并且能够将气泡限制到适当的体积。 用于冷却发热元件的沸腾冷却装置设置有多个垂直布置的冷却通道,其包括下通道(2),中间通道(3)和非上通道(4)。 每个冷却通道具有用于引导制冷剂沿垂直方向流动的冷却片(12)和形成在与发热量接触的一侧相反的散热片(12)侧的蒸汽排出通道(16) 元件。 此外,在冷却通道之间设置有流路分隔/蒸汽排出引导板(18),使得已经产生的气泡被引导到蒸气排放路径(16)并阻止其进入随后的冷却通道。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    95.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20120067845A1

    公开(公告)日:2012-03-22

    申请号:US13233082

    申请日:2011-09-15

    IPC分类号: H01L21/3065 H01L21/306

    CPC分类号: H01J37/32192

    摘要: There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

    摘要翻译: 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置,并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成,并且用作与安装台5内的电极7对置的面对电极,其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极(面对电极表面积/偏置电极面积)的表面积的比率在约1至约5的范围内。

    PLASMA PROCESSING APPARATUS
    97.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号:US20110174441A1

    公开(公告)日:2011-07-21

    申请号:US13075557

    申请日:2011-03-30

    IPC分类号: H01L21/3065 C23C16/511

    摘要: Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

    摘要翻译: 提供了一种等离子体处理装置,其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜,优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此,防止了不期望的短路和异常放电,并且形成稳定的高频电流路径。

    Method for forming silicon oxide film, storage medium, and plasma processing apparatus
    98.
    发明申请
    Method for forming silicon oxide film, storage medium, and plasma processing apparatus 审中-公开
    形成氧化硅膜,存储介质和等离子体处理装置的方法

    公开(公告)号:US20110017586A1

    公开(公告)日:2011-01-27

    申请号:US12805301

    申请日:2010-07-22

    IPC分类号: H01L21/02 B05C5/02

    摘要: In oxidation of a silicon having irregularities, a silicon oxide film having a thickness as small as possible is formed in the side wall as compared with the bottom. A plasma is generated, using a plasma processing apparatus (100) which introduces microwave into a chamber (1) through a plane antenna (31) having plural microwave radiating holes (32), while applying a high-frequency power to a stage (2), under the conditions that the proportion of oxygen in the processing gas is in the range of 0.1 to 50% and the processing pressure is in the range of 1.3 to 667 Pa. By using this plasma, the ratio of the thickness of the silicon oxide film formed on the side wall surfaces of the irregularities to the thickness of the silicon oxide film formed on the bottom wall surfaces of the recessed portions of the irregularities is made not more than 0.6, while the thickness of the silicon oxide films formed on the bottom wall surfaces is not less than 6 nm and not more than 20 nm.

    摘要翻译: 在具有凹凸的硅的氧化中,与底部相比,在侧壁中形成厚度尽可能小的氧化硅膜。 使用等离子体处理装置(100)等离子体,其通过具有多个微波辐射孔(32)的平面天线(31)将微波引入室(1),同时向载物台(2)施加高频电力 ),处理气体中的氧的比例为0.1〜50%,处理压力为1.3〜667Pa的范围的条件下,通过使用该等离子体,硅的厚度 形成在不规则部分的侧壁表面上的氧化膜与形成在凹凸部的凹部的底壁表面上的氧化硅膜的厚度成比例不大于0.6,而形成在氧化硅膜上的氧化硅膜的厚度 底壁面不小于6nm且不大于20nm。

    Method of manufacturing cylindrical body, and friction stir welding method
    99.
    发明授权
    Method of manufacturing cylindrical body, and friction stir welding method 有权
    制造圆柱体的方法和摩擦搅拌焊接方法

    公开(公告)号:US07815094B2

    公开(公告)日:2010-10-19

    申请号:US10537180

    申请日:2003-12-05

    IPC分类号: B23K20/12

    摘要: A method of manufacturing a cylindrical body, comprising the step of forming the cylindrical body by bending a plate-like work having first projected finger to fourth projected finger at four corned parts and allowing the end faces thereof to abut on each other, wherein the main surface of the cylindrical body on the side where sags are present is formed in an outer peripheral wall surface and the rear surface thereof on the side where the burrs are present is formed in an inner peripheral wall surface, and a first projected part is formed of the first projected finger and the third projected finger and a second projected part is formed of the second projected finger and the fourth projected finger. After the cylindrical body is held by friction stir welding devices, the probe of a friction stir welding tool is buried from the direction of either of the first projected part and the second projected part, and scanned in the direction of the other of the second projected part and the first projected part. The probe is buried and scanned in the state of being displaced to an advancing side.

    摘要翻译: 一种制造圆筒体的方法,包括以下步骤:通过将具有第一伸出的手指的板状工件弯曲成四个突出的指状物并使其端面相互抵靠而形成圆柱体,其中主体 在外周壁面上形成圆筒体的存在下垂侧的表面,并且在内周壁面上形成有位于毛边存在侧的后表面,第一突出部由 第一投影手指和第三投影手指以及第二投影部分由第二投射手指和第四投射指形成。 在通过摩擦搅拌焊接装置保持圆筒体之后,摩擦搅拌焊接工具的探针从第一突出部分和第二突出部分中的任一个的方向被掩埋,并且沿着第二突出部分和第二突出部分中的另一个的方向被扫描 部分和第一个投影部分。 探头被置于扫描状态下被移动到前进侧。