公开(公告)号：US20150349099A1

公开(公告)日：2015-12-03

申请号：US14820008

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/46

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Abstract translation: 本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。 在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层， 漏电极层。 有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。

公开(公告)号：US20150340509A1

公开(公告)日：2015-11-26

申请号：US14819772

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20150333185A1

公开(公告)日：2015-11-19

申请号：US14810700

申请日：2015-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

Abstract: An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是稳定薄膜晶体管的电特性。 在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。 此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化 ，使得薄膜晶体管的电特性能够稳定。

公开(公告)号：US20150311235A1

公开(公告)日：2015-10-29

申请号：US14795602

申请日：2015-07-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

Abstract translation: 需要包括具有适当结构和占用面积小的氧化物半导体，保护电路等的显示装置。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 在所述栅极绝缘层上方并与所述栅电极重叠的第一氧化物半导体层; 以及通过层叠导电层和第二氧化物半导体层而形成的第一布线层和第二布线层，并且其端部在第一氧化物半导体层上方并与栅电极重叠。 非线性元件的栅电极连接到扫描线或信号线，非线性元件的第一布线层或第二布线层直接连接到栅极电极层，以施加电位 栅电极。

公开(公告)号：US20150236054A1

公开(公告)日：2015-08-20

申请号：US14700562

申请日：2015-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L27/12 ,  H01L29/786

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract translation: 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层 其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

公开(公告)号：US20150104901A1

公开(公告)日：2015-04-16

申请号：US14574964

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/263 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US20150035058A1

公开(公告)日：2015-02-05

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/51 ,  H01L29/49

CPC classification number: H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

Abstract translation: 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。

公开(公告)号：US20140357018A1

公开(公告)日：2014-12-04

申请号：US14459548

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Masashi TSUBUKU

IPC: H01L29/66 ,  H01L27/12

CPC classification number: H01L29/66742 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/447 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/7869

Abstract: To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

Abstract translation: 为了提供一种制造薄膜晶体管的方法，其中氧化物半导体层和源极和漏极电极层之间的接触电阻很小，源极和漏极电极层的表面用等离子体和含有氧化物半导体层的氧化物半导体层进行溅射处理 In，Ga和Zn依次形成在源极和漏极电极层上，而不会将源极和漏极电极层暴露于空气。

公开(公告)号：US20140239183A1

公开(公告)日：2014-08-28

申请号：US14187909

申请日：2014-02-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Hironobu TAKAHASHI ,  Hiroshi KANEMURA ,  Akiharu MIYANAGA

IPC: G01T1/20

CPC classification number: G01T1/2018

Abstract: An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.

Abstract translation: 提供了一种对诸如X射线的辐射照射高度稳定并且可以抑制电特性降低的成像装置。 成像装置使用诸如X射线的辐射获得图像，并且包括排列成矩阵并且闪烁体重叠的像素电路。 每个像素电路包括截止电流极低的开关晶体管和光接收元件。 使用金属材料等形成的屏蔽层与晶体管和光接收元件重叠。 通过该结构，可以提供对X射线等照射进行照射高度稳定并能够抑制电特性降低的成像装置。

公开(公告)号：US20140231802A1

公开(公告)日：2014-08-21

申请号：US14264301

申请日：2014-04-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC: H01L27/12

CPC classification number: H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Abstract translation: 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。