公开(公告)号：US08981374B2

公开(公告)日：2015-03-17

申请号：US14161975

申请日：2014-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Abstract translation: 提供了具有高开口率并且包括能够增加充电容量的电容器的半导体器件。 半导体器件包括：衬底上的晶体管，衬底上的第一透光导电膜，覆盖晶体管的氧化物绝缘膜，并且在第一透光导电膜上具有开口;氧化物绝缘膜上的氮化物绝缘膜 并且与开口部中的第一透光性导电膜接触，与该晶体管连接并具有开口部的凹部的第二透光性导电膜，以及第二透光性导电膜， 传输导电膜被填充。

公开(公告)号：US20150053973A1

公开(公告)日：2015-02-26

申请号：US14462994

申请日：2014-08-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masahiro Katayama ,  Masami Jintyou

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L29/94

Abstract: A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

Abstract translation: 半导体器件具有设置有晶体管和电容器的绝缘表面。 晶体管包括栅电极，与栅电极重叠的氧化物半导体膜，栅电极和氧化物半导体膜之间的栅极绝缘膜，以及用作与氧化物半导体膜接触的一对电极的第一导电膜。 与氧化物半导体膜接触的氧化物绝缘膜，氧化物绝缘膜上的金属氧化物膜，以及用作像素电极的第二导电膜，其在金属氧化物膜的开口中并与第一导电 提供电影。 电容器包括在栅极绝缘膜上具有导电性的膜，第二导电膜和设置在具有导电性的膜和第二导电膜之间的金属氧化物膜。

公开(公告)号：US20140024154A1

公开(公告)日：2014-01-23

申请号：US14038899

申请日：2013-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yamato AIHARA ,  Masami Jintyou ,  Rai Sato ,  Toru Arakawa

IPC: H01L27/12

CPC classification number: H01L27/1262 ,  G02F1/133553 ,  G02F1/13725

Abstract: In the liquid crystal display device in which a guest-host liquid crystal layer is provided between a first substrate having a reflective film which is a pixel electrode layer (also referred to as a first electrode layer) and a second substrate having a common electrode layer (also referred to as a second electrode layer), the reflective film which is a pixel electrode layer is projected into the liquid crystal layer, and a micron-sized first unevenness and a nano-sized second unevenness on the first unevenness are provided.

Abstract translation: 在具有作为像素电极层（也称为第一电极层）的反射膜的第一基板和具有公共电极层的第二基板之间设置客体主体液晶层的液晶显示装置 （也称为第二电极层），作为像素电极层的反射膜投射到液晶层中，并且在第一凹凸上设置微米级的第一凹凸和纳米尺寸的第二凹凸。

公开(公告)号：US12261119B2

公开(公告)日：2025-03-25

申请号：US18370916

申请日：2023-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Toshimitsu Obonai ,  Masami Jintyou ,  Daisuke Kurosaki

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265

Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer. The first insulating layer includes a third region overlapping with the first conductive layer and a fourth region not overlapping with the first conductive layer. Furthermore, the second region and the fourth region contain phosphorus or boron.

公开(公告)号：US12170337B2

公开(公告)日：2024-12-17

申请号：US18133622

申请日：2023-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L21/28 ,  H01L27/12 ,  H01L29/04 ,  H01L29/45 ,  H01L29/49

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US12087825B2

公开(公告)日：2024-09-10

申请号：US18243850

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/622 ,  C23C14/08 ,  C23C14/58 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  C03C2217/23 ,  C03C2218/151 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US12034080B2

公开(公告)日：2024-07-09

申请号：US16520831

申请日：2019-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Masami Jintyou ,  Takahiro Iguchi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

公开(公告)号：US11990551B2

公开(公告)日：2024-05-21

申请号：US17182367

申请日：2021-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Yasutaka Nakazawa ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/7869

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

公开(公告)号：US11935962B2

公开(公告)日：2024-03-19

申请号：US17744812

申请日：2022-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78603 ,  G02F1/1368 ,  H10K59/1213

Abstract: A semiconductor device having favorable characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide that exhibits semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion of the semiconductor layer to be a channel formation region and is not provided under portions to be low-resistance regions.

公开(公告)号：US11894466B2

公开(公告)日：2024-02-06

申请号：US17279153

申请日：2019-09-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Rai Sato ,  Masami Jintyou ,  Masayoshi Dobashi ,  Takashi Shiraishi ,  Satoru Saito ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/78621 ,  H01L29/42384 ,  H01L29/66969 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/7869 ,  H01L2029/42388

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.