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公开(公告)号：US20160181477A1
公开(公告)日：2016-06-23
申请号：US15056702
申请日：2016-02-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： So Ra Lee , Yeo Jin Yoon
Abstract: A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.
Abstract translation: 发光二极管包括设置在基板上的n型半导体层; 设置在n型半导体层的一部分上的p型半导体层; 设置在n型半导体层和p型半导体层之间并通过电子和空穴的复合产生光的有源层; 欧姆接触层，设置在p型半导体层上，并且包括掺杂有金属的氧化铟锡（ITO）层，设置在欧姆接触层上的透明导电层，其厚度与欧姆接触层不同，并包括未掺杂的 ITO层和设置在透明导电层上并包括氧化物层的反射层。 因此，通过提高欧姆接触层的可靠性和导电性，通过由氧化物形成的反射层提高发光效率，发光二极管表现出优异的电流 - 电压特性。
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92.发明申请LIGHT EMITTING DIODE DEVICE HAVING CONNECTED LIGHT EMITTING DIODE ELEMENTS AND METHOD OF FABRICATING THE SAME 有权具有连接的发光二极管元件的发光二极管器件及其制造方法公开(公告)号：US20160155899A1
公开(公告)日：2016-06-02
申请号：US14954835
申请日：2015-11-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Se Hee Oh , Yeo Jin Yoon , Jong Kyu Kim
CPC classification number: H01L33/20 , H01L27/153 , H01L33/0095 , H01L33/62
Abstract: Disclosed is a light emitting diode including a plurality of light emitting diode elements and a method of fabricating the same. The light emitting diode includes: a substrate; a plurality of light emitting diode elements disposed on the substrate; interconnection lines connecting the light emitting diode elements to each other, wherein the plurality of light emitting diode elements comprise outer light emitting diode elements aligned along an edge of the substrate, each of the outer light emitting diode elements comprises an inner face directed towards an adjacent light emitting diode element and an outer face disposed adjacent the edge of the substrate and directed towards an outside of the substrate, and the inner face of at least one of the outer light emitting diode elements comprises a more gently slanted side surface than the outer face thereof.
Abstract translation: 公开了一种包括多个发光二极管元件的发光二极管及其制造方法。 发光二极管包括：基板; 设置在所述基板上的多个发光二极管元件; 将所述发光二极管元件彼此连接的互连线，其中所述多个发光二极管元件包括沿着所述衬底的边缘排列的外部发光二极管元件，所述外部发光二极管元件中的每一个包括指向相邻 发光二极管元件和与衬底的边缘相邻并且指向衬底外部的外表面，并且外部发光二极管元件中的至少一个的内表面包括比外表面更温和地倾斜的侧表面 其中。
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公开(公告)号：US09356212B2
公开(公告)日：2016-05-31
申请号：US14459887
申请日：2014-08-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee Oh , Mae Yi Kim , Seom Geun Lee , Myoung Hak Yang , Yeo Jin Yoon
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/385 , H01L33/387 , H01L33/42 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer.
Abstract translation: 发光二极管包括设置在基板上的发光单元和将发光单元彼此连接的互连。 每个发光单元包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的有源层，以及设置在第二半导体层上的透明电极层，其中第一和第二半导体 层具有不同的导电类型。 互连包括通常连接发光单元的第一和第二发光单元的公共阴极，第一和第二发光单元共享第一半导体层，透明电极层连续地设置在第一和第二发光单元之间，以及 公共阴极通过透明电极层电连接到第一和第二发光单元。
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94.发明申请公开(公告)号：US20160079474A1
公开(公告)日：2016-03-17
申请号：US14952641
申请日：2015-11-25
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duck II Suh , Kyoung Wan Kim , Yeo Jin Yoon , Ye Seul Kim , Ji Hye Kim
CPC classification number: H01L33/24 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0091
Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。
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公开(公告)号：US09281446B2
公开(公告)日：2016-03-08
申请号：US14385113
申请日：2013-02-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duk Il Suh , Kyoung Wan Kim , Yeo Jin Yoon , Ji Hye Kim
CPC classification number: H01L33/24 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/382 , H01L33/42 , H01L2933/0016 , H01L2933/0058
Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.
Abstract translation: 公开了一种发光二极管及其制造方法。 发光二极管包括具有多个通孔的GaN衬底; GaN基半导体堆叠结构，其放置在基板上并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及经由所述通孔与所述第一导电型半导体层电连接的第一电极。 发光二极管可以减少晶体缺陷并防止发光面积的减少。
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Patent Agency Ranking
96.发明申请LED CHIP RESISTANT TO ELECTROSTATIC DISCHARGE AND LED PACKAGE INCLUDING THE SAME 有权LED芯片抗静电放电和LED封装包括它公开(公告)号：US20150318443A1
公开(公告)日：2015-11-05
申请号：US14724436
申请日：2015-05-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Duk Il Suh , Kyoung Wan Kim , Yeo Jin Yoon , Sang Won Woo , Shin Hyoung Kim
CPC classification number: H01L33/387 , H01L27/15 , H01L29/861 , H01L33/145 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0091 , H01L2924/00014
Abstract: A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.
Abstract translation: 发光二极管芯片和包括该发光二极管芯片的发光二极管封装。 发光二极管芯片包括衬底，设置在衬底上的发光二极管部分，设置在衬底上并且与发光二极管部分反向并联连接的反并联二极管部分。 在发光二极管芯片中，发光二极管部分与逆并联二极管部分一起设置。
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公开(公告)号：US20150311384A1
公开(公告)日：2015-10-29
申请号：US14796421
申请日：2015-07-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun HEO , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。
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98.发明申请SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE 审中-公开具有凹凸图案的基板，包括基板的发光二极管以及用于制造二极管的方法公开(公告)号：US20150270441A1
公开(公告)日：2015-09-24
申请号：US14732455
申请日：2015-06-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jae Kwon Kim , Sum Geun Lee , Kyung Wan Kim , Yeo Jin Yoon , Duk Il Suh , Ji Hye Kim
CPC classification number: H01L33/20 , H01L27/153 , H01L33/007 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.
Abstract translation: 提供具有凹凸图案的基板，包括该基板的发光二极管（LED）以及制造该LED的方法。 LED包括基板和设置在基板的上表面中并具有由凸部限定的凸起和凹部的凹凸图案。 存在具有依次设置在基板上的第一导电半导体层或有源层，第二导电半导体层的单元发光器件。
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公开(公告)号：US20150236216A1
公开(公告)日：2015-08-20
申请号：US14701374
申请日：2015-04-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ye Seul Kim , Da Yeon Jeong , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh
Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
Abstract translation: 公开了一种发光二极管（LED），其包括发光层叠结构和形成为在发光层叠结构上具有图案的电极结构。 LED的电极结构包括在发光层叠结构上沿着图案设置的反射体簇，以及形成为完全覆盖反射体的焊盘材料层。
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公开(公告)号：US09112102B2
公开(公告)日：2015-08-18
申请号：US14067455
申请日：2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan Kim , Tae Kyoon Kim , Yeo Jin Yoon , Ye Seul Kim , Sang Hyun Oh , Jin Woong Lee , In Soo Kim
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
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