公开(公告)号：US06492659B1

公开(公告)日：2002-12-10

申请号：US09570612

申请日：2000-05-12

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L2900

CPC分类号： H01L29/78627 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78684

摘要： To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent insulating thermal conductive layer 2 is provided in close contact with the main surface of a substrate 1, and an insular or striped first insulating layer 3 is formed in selected regions on the thermal conductive layer. A second insulating layer 4 and semiconductor film 5 are laminated thereover. The semiconductor film 5 is first formed with an amorphous semiconductor film, and then crystallized by laser annealing. The first insulating layer 3 has the function of controlling the rate of heat flow to the thermal conductive layer 2, and the temperature distribution difference on the substrate 1 is utilized to form a single-crystal semiconductor film on the first insulating layer 3.

摘要翻译： 为了制造具有晶粒的受控位置和尺寸的晶体半导体膜，并且在TFT的沟道形成区域中利用晶体半导体膜以实现高速可操作的TFT。 提供与基板1的主表面紧密接触的半透明绝缘导热层2，并且在导热层上的选定区域中形成岛状或带状的第一绝缘层3。 在其上层压第二绝缘层4和半导体膜5。 半导体膜5首先由非晶半导体膜形成，然后通过激光退火结晶。 第一绝缘层3具有控制到导热层2的热流速的功能，并且利用基板1上的温度分布差在第一绝缘层3上形成单晶半导体膜。

公开(公告)号：US06429053B1

公开(公告)日：2002-08-06

申请号：US08962840

申请日：1997-11-03

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： G02F1/133305 ,  G02F1/136227 ,  H01L29/78636

摘要： A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

摘要翻译： 形成有源矩阵液晶显示器的一对基板由具有透明性和柔性的树脂基板制成。 薄膜晶体管具有形成在形成在一个树脂基板上的树脂层上的半导体膜。 形成树脂层以防止在形成膜期间在树脂基材的表面上产生低聚物并使树脂基材的表面平坦化。

公开(公告)号：US06387737B1

公开(公告)日：2002-05-14

申请号：US09566735

申请日：2000-05-09

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC分类号： H01L2100

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

摘要翻译： 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。通过使用三个光掩模来执行像素电极127，源极区123和漏极区124的形成 可以实现光刻步骤，具有反交错型n沟道TFT的像素TFT部分制备的液晶显示装置和存储电容器。

公开(公告)号：US06218702B1

公开(公告)日：2001-04-17

申请号：US09144584

申请日：1998-08-31

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L2900

CPC分类号： H01L21/02422 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A microcrystal silicon film is formed on a substrate by using a silicide gas, a hydrogen gas, and a source gas that enables introduction of a metal element for accelerating crystallization of silicon in a capacitance-coupling plasma CVD apparatus. The action of the metal element provides a high film forming rate. Therefore, a technique for forming a microcrystal silicon film with high quality and high film forming rate can be provided.

摘要翻译： 通过使用能够在电容耦合等离子体CVD装置中引入用于促进硅的结晶化的金属元素的硅化物气体，氢气和源气体，在基板上形成微晶硅膜。 金属元素的作用提供了高的成膜速率。 因此，可以提供用于形成具有高质量和高成膜速率的微晶硅膜的技术。

公开(公告)号：US08634041B2

公开(公告)日：2014-01-21

申请号：US13466406

申请日：2012-05-08

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US08586988B2

公开(公告)日：2013-11-19

申请号：US13488926

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： [Summary][Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

摘要翻译： 发明内容问题在常规液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器。

公开(公告)号：US08563979B2

公开(公告)日：2013-10-22

申请号：US13224374

申请日：2011-09-02

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： H01L21/02

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/13452 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/68368 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/82007 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

摘要翻译： 在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。 形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。 此外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对。 隔板设置在第一和第二基板之间。 在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。 在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

公开(公告)号：US08557614B2

公开(公告)日：2013-10-15

申请号：US13336356

申请日：2011-12-23

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

IPC分类号： H01L21/66

CPC分类号： H01L51/56 ,  H01L27/3204 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5361 ,  H01L2251/5392 ,  H01L2251/568

摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.

摘要翻译： 本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性 发光元件最大。 在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域 形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。 因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

公开(公告)号：US08394655B2

公开(公告)日：2013-03-12

申请号：US12264541

申请日：2008-11-04

申请人： Shunpei Yamazaki ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L31/18 ,  H01L31/076 ,  Y02E10/548

摘要： A photoelectric conversion device with an excellent photoelectric conversion characteristic with a silicon semiconductor material effectively utilized. The photoelectric conversion device includes a first unit cell including a first electrode, a first impurity semiconductor layer, a single crystal semiconductor layer, and a second impurity semiconductor layer; and a second unit cell including a third impurity semiconductor layer, a non-single-crystal semiconductor layer, a fourth impurity semiconductor layer, and a second electrode. The second and third impurity semiconductor layers are in contact with each other so that the first and second unit cells are connected in series, and an insulating layer is provided for a surface of the first electrode and bonded to a supporting substrate.

摘要翻译： 具有优异的光电转换特性的硅半导体材料的光电转换装置被有效利用。 光电转换装置包括：第一单元电池，包括第一电极，第一杂质半导体层，单晶半导体层和第二杂质半导体层; 以及包括第三杂质半导体层，非单晶半导体层，第四杂质半导体层和第二电极的第二单元电池。 第二和第三杂质半导体层彼此接触，使得第一和第二单元电池串联连接，并且为第一电极的表面提供绝缘层并且结合到支撑基板。

公开(公告)号：US08227802B2

公开(公告)日：2012-07-24

申请号：US12847352

申请日：2010-07-30

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L35/24

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。