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215 条记录 (耗时 0.037 秒)

    Imaging device and optical device
    92.
    发明授权
    Imaging device and optical device 有权
    成像装置和光学装置

    公开(公告)号：US08107810B2

    公开(公告)日：2012-01-31

    申请号：US12259693

    申请日：2008-10-28

    申请人： Tsuyoshi Matsumoto

    发明人： Tsuyoshi Matsumoto

    IPC分类号： G03B17/48 ,  B60R1/06

    CPC分类号： G02B27/0006 ,  B08B7/02 ,  G03B17/00 ,  H04N5/2171 ,  H04N5/2254

    摘要： An imaging device comprising a light transmissive member 18 having light transmissive character, a vibration member 20 causing bending vibration for the light transmissive member, a driving portion 56 for driving the vibration member 20, wherein the driving portion 56 causes bending vibration of the light transmissive member at a first frequency along with a first direction and causes bending vibration of the light transmissive member 18 at a second frequency along with a second direction which is different from said first frequency.

    摘要翻译： 一种成像装置，包括具有透光特性的透光构件18，对透光构件产生弯曲振动的振动构件20，用于驱动振动构件20的驱动部分56，其中驱动部分56引起透光构件的弯曲振动 构件与第一方向一起呈第一频率，并且使得透光构件18的弯曲振动与第二频率以及与所述第一频率不同的第二方向。

    Method and apparatus for plasma processing
    93.
    发明授权
    Method and apparatus for plasma processing 有权
    等离子体处理方法和装置

    公开(公告)号：US08057634B2

    公开(公告)日：2011-11-15

    申请号：US10902032

    申请日：2004-07-30

    申请人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

    发明人： Ryoji Nishio ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

    IPC分类号： H01L21/205 ,  H01L21/302

    CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

    摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

    摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

    Plasma processing method and apparatus
    94.
    发明授权
    Plasma processing method and apparatus 失效
    等离子体处理方法和装置

    公开(公告)号：US08038896B2

    公开(公告)日：2011-10-18

    申请号：US11502416

    申请日：2006-08-11

    申请人： Eiji Ikegami ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    发明人： Eiji Ikegami ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    IPC分类号： G01L21/30 ,  C23F1/00

    CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

    摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

    摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

    MICRO-MIRROR ARRAY AND OPTICAL SWITCH
    95.
    发明申请
    MICRO-MIRROR ARRAY AND OPTICAL SWITCH 有权
    微镜阵列和光开关

    公开(公告)号：US20110222137A1

    公开(公告)日：2011-09-15

    申请号：US12999854

    申请日：2010-12-17

    申请人： Tsuyoshi Matsumoto ,  Norinao Kouma ,  Osamu Tsuboi ,  Hiroshi Miyata

    发明人： Tsuyoshi Matsumoto ,  Norinao Kouma ,  Osamu Tsuboi ,  Hiroshi Miyata

    IPC分类号： G02B26/08

    CPC分类号： G02B26/0841

    摘要： A micro-mirror array including a plurality of micro-mirror elements and each of the micro-mirror elements includes a mirror rotating around two axes and a support unit connected to an outer frame and supporting the mirror. The support unit extends between the mirror of the micro-mirror elements including the support unit and one of two mirrors adjacent to the mirror, and both ends of the support unit are connected to the outer frame.

    摘要翻译： 包括多个微镜元件和每个微镜元件的微镜阵列包括围绕两个轴线旋转的镜子和连接到外框架并支撑镜子的支撑单元。 支撑单元在包括支撑单元的微反射镜元件的反射镜和与反射镜相邻的两个反射镜中的一个之间延伸，并且支撑单元的两端连接到外框架。

    METHOD AND APPARATUS FOR PLASMA PROCESSING
    97.
    发明申请
    METHOD AND APPARATUS FOR PLASMA PROCESSING 有权
    用于等离子体处理的方法和装置

    公开(公告)号：US20110209828A1

    公开(公告)日：2011-09-01

    申请号：US13103666

    申请日：2011-05-09

    申请人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

    发明人： Ryoji NISHIO ,  Tadamitsu Kanekiyo ,  Yoshiyuki Oota ,  Tsuyoshi Matsumoto

    IPC分类号： H01L21/66 ,  C23F1/08

    CPC分类号： G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

    摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

    摘要翻译： 本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

    Shooting lens having vibration reducing function and camera system for same
    98.
    发明授权
    Shooting lens having vibration reducing function and camera system for same 有权
    具有减震功能的拍摄镜头及相机系统

    公开(公告)号：US07932926B2

    公开(公告)日：2011-04-26

    申请号：US12588400

    申请日：2009-10-14

    申请人： Hiroyuki Tomita ,  Kazutoshi Usui ,  Tsuyoshi Matsumoto

    发明人： Hiroyuki Tomita ,  Kazutoshi Usui ,  Tsuyoshi Matsumoto

    IPC分类号： H04N5/228 ,  G03B17/00

    CPC分类号： H04N5/23248 ,  H04N5/23254 ,  H04N5/23258 ,  H04N5/23287

    摘要： The invention includes a vibration reduction mechanism, a vibration detecting part, a reference signal generating part, a target drive position calculating part, and a driving part. The vibration reduction mechanism reduces a vibration of a subject image. The vibration detecting part outputs a vibration detection signal. The reference signal generating part estimates a reference signal of the vibration detection part. The target drive position calculating part obtains a vibration component from a difference between the vibration detection signal and the estimated reference signal to obtain a target position to which the vibration reduction mechanism is driven. The driving part controls the vibration reduction mechanism to follow the target position. Particularly, the reference signal generating part corrects the reference signal according to a motion signal obtained from a captured image. An accurate reference signal can be obtained by the correction, thereby improving the performance of the vibration reduction.

    摘要翻译： 本发明包括减振机构，振动检测部分，参考信号产生部分，目标驱动位置计算部分和驱动部分。 减振机构减少被摄体图像的振动。 振动检测部输出振动检测信号。 基准信号生成部估计振动检测部的基准信号。 目标驱动位置计算部分根据振动检测信号和估计的参考信号之间的差异获得振动分量，以获得驱动减振机构的目标位置。 驱动部件控制减振机构跟随目标位置。 特别地，参考信号生成部根据从拍摄图像获得的运动信号来校正参考信号。 通过校正可以获得准确的参考信号，从而提高振动降低的性能。

    Micro movable element
    100.
    发明授权
    Micro movable element 失效
    微动元件

    公开(公告)号：US07903313B2

    公开(公告)日：2011-03-08

    申请号：US12397462

    申请日：2009-03-04

    申请人： Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

    发明人： Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

    IPC分类号： G02B26/08

    CPC分类号： G02B26/0841

    摘要： A micro movable element including a movable portion; first and second driving electrodes; first and second conductor portions electrically connected to the first and second driving electrodes, respectively; an intermediate insulating portion disposed between the first conductor portion and the second conductor portion; and a partly laminated structure portion including the first conductor portion, the intermediate insulating portion and the second conductor portion, wherein the first conductor portion has an opposed face making contact with the intermediate insulating portion, a side face adjacent to the opposed face and an edge portion forming the boundary between the opposed face and the side face, part of the edge portion opposed to the second conductor portion is covered with an insulating film, and parts of the first and second driving electrodes are not covered with an insulating film.

    摘要翻译： 一种微型可移动元件，包括可动部分; 第一和第二驱动电极; 分别电连接到第一和第二驱动电极的第一和第二导体部分; 设置在所述第一导体部分和所述第二导体部分之间的中间绝缘部分; 以及包括所述第一导体部分，所述中间绝缘部分和所述第二导体部分的部分层压结构部分，其中所述第一导体部分具有与所述中间绝缘部分接触的相对面，与相对面相邻的侧面和边缘 形成相对面和侧面之间的边界的部分，与第二导体部分相对的边缘部分的一部分被绝缘膜覆盖，并且第一和第二驱动电极的一部分没有被绝缘膜覆盖。