公开(公告)号：US07186932B2

公开(公告)日：2007-03-06

申请号：US10526658

申请日：2003-09-04

Applicant: Takashi Ishii ,  Masashi Fujimoto ,  Shigetoshi Fujitani ,  Takayuki Sakai ,  Atsushi Matsumoto ,  Takao Fukui

Inventor： Takashi Ishii ,  Masashi Fujimoto ,  Shigetoshi Fujitani ,  Takayuki Sakai ,  Atsushi Matsumoto ,  Takao Fukui

IPC: H01H27/06

CPC classification number: H01H3/001 ,  H01H3/022 ,  H01H19/6355 ,  H01H2003/024 ,  H01H2221/066

Abstract: When an operator applies a removing force to turn a switch portion b in a direction C2, a projection a4 abuts against a slope b71 so that the removing force as a reaction is applied to the slope. The removing force is divided into a component working along the slope b71 and a component F working in a same direction as a center axis X. Thus, the removing force is converted into a force F in the same direction as the center axis X. By means of the force F in the same direction as the center axis X, a pushbutton support b6 is moved downward as accordingly moving a movable contacts b9 away from a fixed contacts b12 via a contact shaft b5.

Abstract translation: 当操作者施加去除力以使开关部分b沿方向C 2转动时，突起a 4抵靠斜面b 71，使得作为反作用力的移除力被施加到斜面。 除去力被分为沿着斜面b 71工作的部件和与中心轴X相同的方向工作的部件F.因此，移除力被转换成与中心轴线X相同方向的力F. 通过力F沿与中心轴线X相同的方向，按钮支撑件b 6向下移动，因此使可动触头b 9经由接触轴b 5远离固定触头b 12移动。

公开(公告)号：US20060118808A1

公开(公告)日：2006-06-08

申请号：US10539926

申请日：2004-03-08

Applicant: Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

Inventor： Sadamu Ishidu ,  Kenjiro Higaki ,  Takashi Ishii ,  Yasushi Tsuzuki

IPC: H01L33/00

CPC classification number: H01L33/642 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

Abstract: A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.

Abstract translation: 提供了用于充分去除由半导体元件产生的热的半导体器件。 半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1， 安装在元件安装表面2a上。 在L表示主表面1a的长度方向上的长度a和H是底面2b与元件安装面2a之间的距离时，H / L的比例为0.3以上。 当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。 金属层13设置在空腔2u的表面上。

公开(公告)号：US20050194690A1

公开(公告)日：2005-09-08

申请号：US10520385

申请日：2003-07-30

Applicant: Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

Inventor： Takashi Ishii ,  Kenjiro Higaki ,  Yasushi Tsuzuki

IPC: H01L21/52 ,  H01L21/60 ,  H01S5/02 ,  H01S5/022 ,  H01L23/48

CPC classification number: B23K35/0238 ,  B23K1/0016 ,  B23K1/19 ,  B23K35/262 ,  B23K35/268 ,  B23K35/3006 ,  B23K35/3013 ,  B23K2101/40 ,  B32B15/01 ,  B32B15/018 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/13111 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01S5/02272 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/0401

Abstract: The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.

Abstract translation: 本发明提供一种能够以高接合强度附着半导体发光元件的基座。 基座3配备有基板3和形成在基板4的主表面4f上的焊料层8。 焊料层8的密度为焊料层8中使用的材料的理论密度的至少50％且不超过99.9％。 焊料层8包含以下列表中的至少一个：金 - 锡合金; 银锡合金; 和铅锡合金。 在其上熔化的焊料层8形成在基板4上，并且包括Ag膜8b和形成在Ag膜8b上的Sn膜8a。 基座3还包括形成在基板4和焊料层8之间的Au膜6。

公开(公告)号：US06734359B2

公开(公告)日：2004-05-11

申请号：US10050568

申请日：2002-01-18

Applicant: Hisashi Hanazaki ,  Takashi Ishii ,  Toshihiro Maki

Inventor： Hisashi Hanazaki ,  Takashi Ishii ,  Toshihiro Maki

IPC: H01R420

CPC classification number: H01R43/0585 ,  H01R4/20

Abstract: Conductor portions (11) of a total of two or more wires (2) are compressively pressed uniformly over an entire periphery within one or a plurality of tubular portions (13) of a terminal (19, and are connected thereto. The terminal (1) has the pair of tubular portions (13) formed respectively at opposite sides thereof, and the conductor portions (11) of one or more wires (2) are compressively pressed uniformly over the entire periphery within each of the tubular portions, and are connected thereto. Alternatively, the terminal has one tubular portion, and the conductor portions (11) of the plurality of wires (2) are compressively pressed uniformly over the entire periphery within the tubular portion in such a manner that the conductor portions are combined together. Conductor portions (11) of a total of two or more wires (2) are inserted into one or a plurality of tubular portions (13) of a terminal (1), and the tubular portion is compressively pressed uniformly over an entire periphery thereof. The compressive pressing of the tubular portion (13) is effected by a rotary swaging machine.

Abstract translation: 总共两根以上的线（2）的导体部（11）在端子（19）的一个或多个管状部（13）内的整个周边上被均匀地压缩并与其连接，端子（1 ）具有分别在其相对侧形成的一对管状部分（13），并且一个或多个电线（2）的导体部分（11）在每个管状部分内的整个周边上被均匀地压缩并被连接 或者，端子具有一个管状部分，并且多个电线（2）的导体部分（11）在导体部分组合在一起的状态下在管状部分内的整个周边上被均匀压制。 将总共​​2根以上的线（2）的导体部（11）插入端子（1）的一个或多个管状部（13）中，并且将管状部在整个周边上被均匀地压缩 其中。 管状部分（13）的压缩是通过旋转模锻机实现的。

公开(公告)号：US06716304B2

公开(公告)日：2004-04-06

申请号：US10309402

申请日：2002-12-03

Applicant: Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

Inventor： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Masuhiro Natsuhara ,  Takashi Ishii ,  Yasuyuki Matsui

IPC: H05H100

CPC classification number: H01L21/6835 ,  C04B37/005 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/066 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/125 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/52 ,  C04B2237/567 ,  C04B2237/62 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/80 ,  H01L21/4857 ,  H01L21/67103 ,  C04B41/0072 ,  C04B41/4539 ,  C04B41/4572 ,  C04B41/5133 ,  C04B41/5022 ,  C04B35/581

Abstract: A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.

Abstract translation: 用于半导体制造装置的晶片保持器具有高导热性。 晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层 以覆盖导电层的表面。 保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。 在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。 然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

公开(公告)号：US06565249B2

公开(公告)日：2003-05-20

申请号：US10026876

申请日：2001-12-27

Applicant: Koichi Toyoda ,  Takashi Ishii

Inventor： Koichi Toyoda ,  Takashi Ishii

IPC: G09F1300

CPC classification number: G02B6/0083 ,  G02B6/0028 ,  G02B6/0038 ,  G02B6/0046 ,  G02B6/0068 ,  Y10S385/901

Abstract: There is provided a spread illuminating apparatus to improve a light coupling efficiency between a light conductive member and a transparent substrate. In the spread illuminating apparatus, an FPC mounting section of a frame is set to be lower than a substrate mounting section by the thickness of an FPC, and an extension provided at an FPC main body is let through an opening formed at a stepped part of the frame so as to be disposed on a reverse side of the frame, whereby an upper surface of the light conductive member is adapted to be flush with an upper surface of the transparent substrate while prevention of the deviation in the thickness direction between the light conductive member and the transparent substrate is not obstructed even when the extension is provided, which results in improving the light coupling efficiency.

公开(公告)号：US06250458B1

公开(公告)日：2001-06-26

申请号：US09386061

申请日：1999-08-30

Applicant: Katsutoshi Shibayama ,  Yoshihiro Murakami ,  Takashi Ishii ,  Daisuke Sanada ,  Toshio Kubayashi

Inventor： Katsutoshi Shibayama ,  Yoshihiro Murakami ,  Takashi Ishii ,  Daisuke Sanada ,  Toshio Kubayashi

IPC: B65G1738

CPC classification number: B65G45/02 ,  B65G17/086 ,  B65G17/38 ,  B65G2201/02 ,  Y10S198/957

Abstract: A plastic conveyor chain includes a multiplicity of pinned links each having a flat load-carrying portion formed from a synthetic resin compound containing a polyacetal resin and a silicone-containing lubricant. Preferably, the silicone-containing lubricant contains, with respect to the weight of the synthetic resin compound, 0.5 to 2.0% by weight of silicone oil, 0.5 to 2.0% by weight of potassium titanate fiber, and 0.5 to 2.0% by weight of fatty ester obtained from a monobasic fatty acid and a monohydric alcohol. The thus formed flat load-carrying portion has a low friction coefficient such that the conveyor chain can achieve stable conveyance of articles even when the articles have an unstable bottom configuration.

Abstract translation: 塑料输送链包括多个销钉连接件，每个销钉具有由含有聚缩醛树脂和含硅酮润滑剂的合成树脂化合物形成的平坦载荷部分。 优选地，含有硅氧烷的润滑剂含有0.5-2.0重量％的硅油，0.5-2.0重量％的钛酸钾纤维和0.5-2.0重量％的脂肪酸​​，相对于合成树脂化合物的重量， 酯，由一元脂肪酸和一元醇得到。 这样形成的平坦承载部分具有低摩擦系数，使得即使当制品具有不稳定的底部构型时，输送链也可以实现物品的稳定输送。

公开(公告)号：US06226865B1

公开(公告)日：2001-05-08

申请号：US09274975

申请日：1999-03-23

Applicant: Satoshi Tanikawa ,  Takashi Ishii

Inventor： Satoshi Tanikawa ,  Takashi Ishii

IPC: H01R4300

CPC classification number: B23K20/10 ,  B23K2101/38 ,  H01R9/0512 ,  H01R43/0207 ,  H01R43/0228 ,  Y10T29/49194 ,  Y10T29/49201

Abstract: In this method, a ground wire 2 is overlaid on a shield wire 1 in cross. Next, overlapping portions of the shield wire 1 and the ground wire 2 are interposed between an upper resin tip 13 and a lower resin tip 14. By executing a first ultrasonic oscillation while inserting a projection 7a of an ultrasonic horn 7 into a through hole 13b of the tip 13, outside rinds 1d, 2b of the wires 1, 2 are removed in the vicinity of the overlapping portions. Next, by arranging a low-melting metal 15 and a resin piece 16 on a contact between the braided wire 1c and the core line 2a and executing a second ultrasonic oscillation, the contact can be brazed with the mutual welding of the tips 13, 14.

Abstract translation: 在该方法中，地线2交叉地覆盖在屏蔽线1上。 接下来，屏蔽线1和接地线2的重叠部分插入在上树脂末端13和下树脂末端14之间。通过在将超声波喇叭7的突起7a插入通孔13b中的同时执行第一超声波振荡 在重叠部分附近除去导线1,2的外侧1d，2b的末端13的外侧。 接下来，通过在编织线1c和芯线2a之间的接触处布置低熔点金属15和树脂片16并执行第二超声波振荡，可以通过尖端13,14的相互焊接钎焊接触 。

公开(公告)号：US5947757A

公开(公告)日：1999-09-07

申请号：US46575

申请日：1998-03-24

Applicant: Takashi Ishii

Inventor： Takashi Ishii

IPC: H01R13/629 ,  H01R13/62

CPC classification number: H01R13/62905 ,  H01R13/62933

Abstract: A lever-type connector is provided. A connector housing is provided with support axes. A stopper is formed on the tip of each support axis. Axis holes 4 for receiving the support axes are formed on a lever for connector engagement. The lever is rotatably supported by the connector housing. A stopper is formed by bending and protruding the tip portion of each support axis in one direction. The stopper is bent or protrudes in a direction opposite to the moving direction of the lever. A guide surface for each axis hole is formed on the opposite side of the bent or protruding portion of each stopper. Thus, the support axes of the connector housing and the axis holes of the connector engaging lever can be simplified.

Abstract translation: 提供了杠杆式连接器。 连接器壳体设有支撑轴。 在每个支撑轴线的尖端上形成止动件。 用于接收支撑轴的轴孔4形成在用于连接器接合的杆上。 杠杆由连接器壳体可旋转地支撑。 通过在一个方向上弯曲和突出每个支撑轴线的末端部分而形成止动件。 止动器沿与杆的移动方向相反的方向弯曲或突出。 在每个止动器的弯曲或突出部分的相对侧上形成有用于每个轴孔的引导表面。 因此，可以简化连接器壳体的支撑轴和连接器接合杆的轴孔。

公开(公告)号：US5917399A

公开(公告)日：1999-06-29

申请号：US985087

申请日：1997-12-04

Applicant: Takashi Ishii

Inventor： Takashi Ishii

IPC: H01H85/08 ,  H01H85/041 ,  H01H85/055 ,  H01H85/06 ,  H01H85/47 ,  H01H85/04

CPC classification number: H01H85/055 ,  H01H85/0417

Abstract: A method of adjusting pre-arcing time-current characteristic for a fuse is performed in a manner that a fusible portion I serving in a dead short-circuit area and a fusible portion II serving in a rare short-circuit area are coupled in series to form a fuse element, and entire pre-arcing time-current characteristic for the fuse is adjusted by combining pre-arcing time-current characteristic of the respective fusible portions I and II. A fuse structure is formed by a fusible portion I serving in a dead short-circuit, and a fusible portion II serving in a rare short-circuit area coupled in series with the fusible portion I serving in a dead short-circuit area. The fusible portion II serving in a rare short-circuit area is formed by material which is different in conductivity and melting point from those of material forming the fusible portion I serving in a dead short-circuit area.

Abstract translation: 一种调整熔断器的预电流时间 - 电流特性的方法是这样一种方式：将在短路区域中服务的可熔部分I和在稀有短路区域中服务的可熔部分II串联耦合到 形成保险丝元件，并且通过组合相应的可熔部分I和II的预制电流时间特性来调整熔丝的整个预电弧时间 - 电流特性。 保险丝结构由在短路时产生的可熔部分I形成，以及易熔部分II，其在与在非短路区域中服务的可熔部分I串联耦合的稀有短路区域中。 用于稀有短路区域的可熔部分II由导电性和熔点不同于形成在非短路区域中形成的可熔部分I的材料的材料形成。