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245 条记录 (耗时 0.047 秒)

    Peeling method
    94.
    发明授权
    Peeling method 有权
    剥皮方法

    公开(公告)号：US07666719B2

    公开(公告)日：2010-02-23

    申请号：US12149131

    申请日：2008-04-28

    申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

    Semiconductor device and manufacturing method thereof
    95.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07547612B2

    公开(公告)日：2009-06-16

    申请号：US11713606

    申请日：2007-03-05

    申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

    发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.

    摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 当在衬底上设置金属层11时，提供与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11以进行氧化并形成 金属氧化物层16，金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面处可以进行清晰的分离。

    Semiconductor device, method of manufacturing the same, and method of designing the same
    96.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of designing the same 有权
    半导体装置及其制造方法及其设计方法

    公开(公告)号：US07541228B2

    公开(公告)日：2009-06-02

    申请号：US12003983

    申请日：2008-01-04

    申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/302

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

    摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

    摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

    Semiconductor device comprising a light emitting element and a light receiving element
    97.
    发明授权
    Semiconductor device comprising a light emitting element and a light receiving element 有权
    包括发光元件和光接收元件的半导体器件

    公开(公告)号：US07459726B2

    公开(公告)日：2008-12-02

    申请号：US10775328

    申请日：2004-02-11

    申请人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    发明人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

    IPC分类号： H01L31/12

    CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/3209 ,  H01L27/3227 ,  H01L29/78603 ,  H01L29/78621

    摘要： A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.

    摘要翻译： 一种半导体器件，具有由便宜的玻璃基板形成的能够处理大量信息并以较高数据速率工作的高性能集成电路。 半导体器件包括通过转移形成在不同衬底上的半导体元件而堆叠的半导体元件。 在层叠的半导体元件之间形成树脂膜，并且也在层叠的半导体元件之间部分地形成金属氧化物膜。 第一电信号被转换成电连接到堆叠的半导体元件之一的发光元件中的光信号。 同时，光电信号被转换为与另一个堆叠的半导体元件电连接的光接收元件中的第二电信号。

    Peeling method
    98.
    发明申请
    Peeling method 有权

    公开(公告)号：US20080206959A1

    公开(公告)日：2008-08-28

    申请号：US12149131

    申请日：2008-04-28

    申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

    IPC分类号： H01L21/20

    CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    Semiconductor device and manufacturing method thereof
    99.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07189631B2

    公开(公告)日：2007-03-13

    申请号：US10694803

    申请日：2003-10-29

    申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

    发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

    IPC分类号： H01L21/30 ,  H01L21/84

    CPC分类号： H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.

    摘要翻译： 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。 当在衬底上设置金属层11时，提供与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11以进行氧化并形成 金属氧化物层16，金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面处可以进行清晰的分离。

    Semiconductor device and method of manufacturing the same
    100.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号：US07091070B2

    公开(公告)日：2006-08-15

    申请号：US10787552

    申请日：2004-02-27

    申请人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    发明人： Keitaro Imai ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

    IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

    摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

    摘要翻译： 为了提供一种制造半导体器件的方法，该半导体器件包括转印步骤，该转印步骤能够在分离包含半导体元件或在其上形成的集成电路的元件形成层的情况下控制衬底和元件形成层的粘附性 衬底并将其粘合到另一衬底上。 在半导体元件或包括形成在基板（第一基板）和基板之上的多个半导体元件的集成电路之间）形成由良好的粘合性材料制成的粘合剂，因此可以防止半导体元件剥离 制造半导体元件的基板，并且通过在形成半导体元件之后去除粘合剂，使得更容易将半导体元件与基板分离。