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180 条记录 (耗时 0.043 秒)

    High efficient phosphor-converted light emitting diode
    91.
    发明授权
    High efficient phosphor-converted light emitting diode 有权
    高效磷光转换发光二极管

    公开(公告)号：US08183584B2

    公开(公告)日：2012-05-22

    申请号：US13101420

    申请日：2011-05-05

    申请人： Chien-Yuan Wang ,  Chih-Chiang Lu ,  Min-Hsun Hsieh

    发明人： Chien-Yuan Wang ,  Chih-Chiang Lu ,  Min-Hsun Hsieh

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/44 ,  H01L33/50

    摘要： A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

    摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括衬底，半导体发光结构，滤光层和荧光转换层。 该方法包括在衬底上形成半导体发光结构，在半导体发光结构上形成滤光层，并在滤光层上形成荧光转换层。

    Semiconductor light emitting device
    92.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08148196B2

    公开(公告)日：2012-04-03

    申请号：US12984184

    申请日：2011-01-04

    申请人： Min-Hsun Hsieh

    发明人： Min-Hsun Hsieh

    IPC分类号： H01L33/60

    CPC分类号： H01L33/58 ,  H01L33/54 ,  H01L33/60 ,  H01L2933/0091

    摘要： This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.

    摘要翻译： 本发明公开了一种包括发光结构和外部光学元件的发光半导体器件。 光学元件周向耦合到发光结构。 此外，外部光学元件的折射率大于或大致与发光结构的透明基板的折射率相同，或者在透明基板和密封剂材料的折射率之间。

    WAVELENGTH CONVERTING SYSTEM
    93.
    发明申请
    WAVELENGTH CONVERTING SYSTEM 有权

    公开(公告)号：US20110286201A1

    公开(公告)日：2011-11-24

    申请号：US13195620

    申请日：2011-08-01

    申请人： Chien-Yuan WANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu

    发明人： Chien-Yuan WANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu

    IPC分类号： F21V9/16 ,  F21V9/00

    CPC分类号： G02F1/353 ,  F21K9/64 ,  F21V9/30 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.

    Semiconductor device
    94.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08022425B2

    公开(公告)日：2011-09-20

    申请号：US12314730

    申请日：2008-12-16

    申请人： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

    发明人： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

    摘要翻译： 提供了示例性的半导体器件。 半导体器件包括半导体堆叠层和导电结构。 导电结构位于半导体堆叠层上。 导电结构包括底部和在其相对侧上的顶部。 底部与半导体堆叠层接触。 顶部的顶部宽度与底部的底部宽度之比小于0.7。 导电结构可以是导电点结构或导线结构。

    HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE
    95.
    发明申请
    HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE 有权
    高效磷光转换发光二极管

    公开(公告)号：US20110210361A1

    公开(公告)日：2011-09-01

    申请号：US13101420

    申请日：2011-05-05

    申请人： Chien-Wuan WANG ,  Chih-Chiang Lu ,  Min-Hsun Hsieh

    发明人： Chien-Wuan WANG ,  Chih-Chiang Lu ,  Min-Hsun Hsieh

    IPC分类号： H01L33/50

    CPC分类号： H01L33/44 ,  H01L33/50

    摘要： A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

    摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括衬底，半导体发光结构，滤光层和荧光转换层。 该方法包括在衬底上形成半导体发光结构，在半导体发光结构上形成滤光层，并在滤光层上形成荧光转换层。

    Semiconductor light emitting device
    98.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US07884380B2

    公开(公告)日：2011-02-08

    申请号：US12155595

    申请日：2008-06-06

    申请人： Min-Hsun Hsieh

    发明人： Min-Hsun Hsieh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/58 ,  H01L33/54 ,  H01L33/60 ,  H01L2933/0091

    摘要： This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.

    摘要翻译： 本发明公开了一种包括发光结构和外部光学元件的发光半导体器件。 光学元件周向耦合到发光结构。 此外，外部光学元件的折射率大于或大致与发光结构的透明基板的折射率相同，或者在透明基板和密封剂材料的折射率之间。

    LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME
    99.
    发明申请
    LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME 有权
    具有多个主要波长分布的发光装置及其制造方法

    公开(公告)号：US20100213491A1

    公开(公告)日：2010-08-26

    申请号：US12711678

    申请日：2010-02-24

    申请人： Chih-Chiang LU ,  Shu-Ting Hsu ,  Yen-Wen Chen ,  Chien-Yuan Wang ,  Ru-Shi Liu ,  Min-Hsun Hsieh

    发明人： Chih-Chiang LU ,  Shu-Ting Hsu ,  Yen-Wen Chen ,  Chien-Yuan Wang ,  Ru-Shi Liu ,  Min-Hsun Hsieh

    IPC分类号： H01L33/44

    CPC分类号： H01L33/504 ,  H01L27/156 ,  H01L33/44 ,  H01L33/508 ,  H01L2224/18

    摘要： This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

    摘要翻译： 本申请公开了一种具有窄波长分布的发光器件及其制造方法。 具有窄主波长分布的发光器件至少包括衬底，衬底上的多个发光层叠层和发光层叠层上的多个波长转换层，其中发光层叠层 发射具有第一主波长变化的第一光; 波长转换层吸收第一光并将第一光转换成具有第二主波长变化的第二光; 并且第一主波长变化大于第二主波长变化。