公开(公告)号：US09938621B2

公开(公告)日：2018-04-10

申请号：US15151845

申请日：2016-05-11

申请人： Veeco Instruments Inc.

发明人： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C30B25/16 ,  C30B29/06 ,  C23C16/46 ,  H01L21/02

CPC分类号： C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： Methods are provided for treating wafers using a wafer carrier rotated about an axis. The wafer carrier is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：USD803283S1

公开(公告)日：2017-11-21

申请号：US29564740

申请日：2016-05-16

申请人： Veeco Instruments, Inc.

设计人： Yuliy Rashkovsky ,  Brett Stuart Snowden ,  Miguel Angel Saldana

公开(公告)号：US09677944B2

公开(公告)日：2017-06-13

申请号：US14883098

申请日：2015-10-14

申请人： Veeco Instruments Inc.

发明人： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

IPC分类号： G01J5/00 ,  G01J5/02 ,  G01J5/60

CPC分类号： G01J5/0007 ,  G01J5/02 ,  G01J5/602

摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

公开(公告)号：US20160168710A1

公开(公告)日：2016-06-16

申请号：US15050728

申请日：2016-02-23

申请人： Veeco Instruments, Inc.

发明人： William E. Quinn ,  Eric A. Armour

IPC分类号： C23C16/52 ,  C23C16/18 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/18 ,  C23C16/45561 ,  C23C16/45574

摘要： A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

摘要翻译： 用于化学气相沉积系统的气体注入系统包括气体歧管，其包括多个阀，其中多个阀中的每一个具有耦合到处理气体源的输入和用于提供处理气体的输出。 多个气体喷射器中的每一个具有耦合到多个阀中的一个的输出端的输入端和位于化学气相沉积反应器的多个区域之一中的输出端。 具有多个输出的控制器，其中所述多个输出中的每一个输出耦合到所述多个阀之一的控制输入。 控制器指示多个阀中的至少一些阀在预定时间打开以向化学气相沉积反应器中的多个区域中的每一个提供期望的气流。

公开(公告)号：US20160126123A1

公开(公告)日：2016-05-05

申请号：US14991962

申请日：2016-01-10

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  William E. Quinn

IPC分类号： H01L21/673 ,  C23C16/44

CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

公开(公告)号：US09303319B2

公开(公告)日：2016-04-05

申请号：US12972270

申请日：2010-12-17

申请人： William E. Quinn ,  Eric A. Armour

发明人： William E. Quinn ,  Eric A. Armour

IPC分类号： C23C16/455 ,  C23C16/52

CPC分类号： C23C16/52 ,  C23C16/18 ,  C23C16/45561 ,  C23C16/45574

摘要： A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

摘要翻译： 用于化学气相沉积系统的气体注入系统包括气体歧管，其包括多个阀，其中多个阀中的每一个具有耦合到处理气体源的输入和用于提供处理气体的输出。 多个气体喷射器中的每一个具有耦合到多个阀中的一个的输出端的输入端和位于化学气相沉积反应器的多个区域之一中的输出端。 具有多个输出的控制器，其中所述多个输出中的每一个输出耦合到所述多个阀之一的控制输入。 控制器指示多个阀中的至少一些阀在预定时间打开以向化学气相沉积反应器中的多个区域中的每一个提供期望的气流。

公开(公告)号：US09269565B2

公开(公告)日：2016-02-23

申请号：US13920845

申请日：2013-06-18

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  William E. Quinn

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

公开(公告)号：US09062369B2

公开(公告)日：2015-06-23

申请号：US12730800

申请日：2010-03-24

申请人： Scott Wayne Priddy ,  Chad Michael Conroy

发明人： Scott Wayne Priddy ,  Chad Michael Conroy

IPC分类号： C23C16/00 ,  C23C14/24 ,  C23C14/06

CPC分类号： C23C14/243 ,  C23C14/0623 ,  Y02E10/52

摘要： The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.

摘要翻译： 本发明提供可以有效和可控地提供用于沉积薄膜材料的蒸发材料的沉积源，系统和相关方法。 本文所述的沉积源，系统和相关方法可以用于沉积任何所需的材料，并且特别适用于在制造基于铜铟镓硒的光电器件的制造中沉积高蒸气压材料如硒。

公开(公告)号：US20140341796A1

公开(公告)日：2014-11-20

申请号：US13897701

申请日：2013-05-20

申请人： Veeco Instruments, Inc.

发明人： Jianmin Wang ,  Serapion C. Daof ,  Senghong Chua ,  Meng Lee

IPC分类号： B24B19/26

CPC分类号： B24B27/06 ,  B28D5/022

摘要： A dual-side wafer bar grinding method and apparatus is disclosed herein that slices wafer bars from a wafer block for use in manufacturing thin film magnetic heads, for example. By grinding opposing faces of the wafer bars sliced from the wafer block, variations in flatness, perpendicularity, surface finish, and/or overall dimensions are improved.

摘要翻译： 本文公开了一种双面晶圆棒研磨方法和装置，其例如从用于制造薄膜磁头的晶片块切片晶片棒。 通过磨削从晶片块切片的晶片棒的相对面，改善了平面度，垂直度，表面光洁度和/或总体尺寸的变化。

公开(公告)号：US08888919B2

公开(公告)日：2014-11-18

申请号：US13037770

申请日：2011-03-01

申请人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

发明人： Bojan Mitrovic ,  Joshua Mangum ,  William E. Quinn

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687 ,  H01L21/20 ,  C23C16/30

CPC分类号： H01L21/68764 ,  C23C16/303 ,  C23C16/45563 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68771

摘要： A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.

摘要翻译： 晶片载体包括限定中心轴线的主体，垂直于中心轴线的大致平面的顶表面，以及凹陷在顶表面下方的用于接收晶片的凹槽。 身体可以包括围绕顶表面的周边向上突出的唇缘。 唇缘可以限定从平面顶表面向远离中心轴线的径向向外的方向向上倾斜的唇表面。 主体可适于安装在处理装置的主轴上，使得主体的中心轴线与主轴同轴。 唇缘可以改善在晶片载体的顶表面上的气流的图案。