公开(公告)号：US4158141A

公开(公告)日：1979-06-12

申请号：US917610

申请日：1978-06-21

申请人： Robert L. Seliger ,  Paul A. Sullivan

发明人： Robert L. Seliger ,  Paul A. Sullivan

IPC分类号： G21K1/00 ,  G03F1/00 ,  G03F1/08 ,  G03F7/20 ,  G21K1/02 ,  G21K1/10 ,  H01J37/09 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  A61K27/02

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  G21K1/025 ,  G21K1/10 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/31755 ,  H01J2237/31788

摘要： The specification describes a process for minimizing ion scattering and thereby improving resolution in ion beam lithography. First, a substrate coated with a layer of ion beam resist is provided at a chosen spaced distance from an ion beam source. Next, a monocrystalline membrane with a patterned ion absorption region is positioned at a predetermined location between the substrate target and the ion beam source. The patterned ion absorption region may be either an ion absorption mask, such as gold, deposited on the surface of the monocrystalline membrane, or a pattern of ion-damaged regions within the monocrystalline membrane. Finally, a collimated wide area ion beam is passed perpendicular to the surface of the membrane and through crystal lattice channels therein which are exposed by the patterned ion absorption region and which extend perpendicular to the membrane surface. The parallel paths established by the channels in the membrane provide low resistance paths to the passage of ion beams and consequently minimize the angle of deflection of the ions passing from the membrane to the target resist layer.

摘要翻译： {PG，1本说明书描述了一种使离子散射最小化并从而提高离子束光刻分辨率的方法。 首先，在距离离子束源选择的间隔距离处提供涂覆有离子束抗蚀剂层的基底。 接下来，具有图案化离子吸收区域的单晶膜位于基板靶和离子束源之间的预定位置。 图案化离子吸收区可以是沉积在单晶膜的表面上的离子吸收掩模，例如金，或单晶膜内的离子损伤区域的图案。 最后，准直的广域离子束垂直于膜的表面通过其中由图案化的离子吸收区域暴露的晶格通道，并且{pg，2垂直于膜表面延伸）。 由膜中的通道建立的平行路径为离子束通过提供低电阻路径，从而使从膜到目标抗蚀剂层的离子的偏转角最小化。

公开(公告)号：US20240087845A1

公开(公告)日：2024-03-14

申请号：US18355681

申请日：2023-07-20

申请人： NuFlare Technology, Inc.

发明人： Haruyuki NOMURA ,  Hirofumi MORITA

IPC分类号： H01J37/317 ,  G03F7/20 ,  H01J37/302

CPC分类号： H01J37/3175 ,  G03F7/2061 ,  H01J37/3026 ,  H01J2237/31776

摘要： An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.

公开(公告)号：US20230282444A1

公开(公告)日：2023-09-07

申请号：US18108583

申请日：2023-02-11

申请人： PDF SOLUTIONS, INC.

发明人： Indranil DE ,  Jeremy CHENG ,  Thomas SOKOLLIK ,  Yoram SCHWARZ ,  Stephen LAM ,  Xumin SHEN

IPC分类号： H01J37/317 ,  H01J37/30 ,  G01R31/306 ,  G01R31/265

CPC分类号： H01J37/3175 ,  G01R31/2653 ,  G01R31/306 ,  H01J37/3005 ,  H01J2237/31762

摘要： Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

公开(公告)号：US11721517B2

公开(公告)日：2023-08-08

申请号：US17207184

申请日：2021-03-19

申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

发明人： Hiroshi Oba ,  Yasuhiko Sugiyama ,  Yoshitomo Nakagawa ,  Koji Nagahara

IPC分类号： H01J37/12 ,  H01J37/09 ,  H01J37/317 ,  H01J37/08 ,  H01J37/20 ,  H01J37/21

CPC分类号： H01J37/12 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/21 ,  H01J37/3175 ,  H01J2237/31788

摘要： Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

公开(公告)号：US20180358203A1

公开(公告)日：2018-12-13

申请号：US15992451

申请日：2018-05-30

申请人： NuFlare Technology, Inc.

发明人： Hirofumi Morita

IPC分类号： H01J37/317

CPC分类号： H01J37/3177 ,  H01J37/3175 ,  H01J2237/0432 ,  H01J2237/0437 ,  H01J2237/0492 ,  H01J2237/1501

摘要： In one embodiment, a multi charged particle beam writing apparatus includes a shaping aperture array forming multiple beams by allowing part of a charged particle beam to pass through a plurality of first openings, a blanking aperture array having a plurality of second openings having respective blankers each configured to deflect and blank the beam passing therethrough, a stopping aperture member having a third opening and configured to block deflected beams of the multiple beams at a position off the third opening, a first alignment coil disposed between the blanking aperture array and the stopping aperture member and adjusting a beam path, an objective lens disposed between the stopping aperture member and a stage, and a movement controller controlling a movement of a position of the third opening in an in-plane direction of the stopping aperture member.

公开(公告)号：US09978562B2

公开(公告)日：2018-05-22

申请号：US14287241

申请日：2014-05-27

申请人： MAPPER LITHOGRAPHY IP B.V.

发明人： Teunis Van De Peut ,  Marco Jan-Jaco Wieland

IPC分类号： H01J37/317 ,  H01J37/302 ,  H01J37/30 ,  G06T1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/04 ,  G03F7/20 ,  G06T1/60 ,  H04N1/405

CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

摘要： A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

公开(公告)号：US09852884B2

公开(公告)日：2017-12-26

申请号：US15128713

申请日：2015-02-06

申请人： NIPPON CONTROL SYSTEM CORPORATION

发明人： Dai Tsunoda

IPC分类号： H01J37/302 ,  G03F1/20 ,  G03F1/84 ,  G03F7/20 ,  H01J37/317 ,  G06T7/13

CPC分类号： H01J37/3026 ,  G03F1/20 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2037 ,  G06T7/13 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/221 ,  H01J2237/28 ,  H01J2237/2817

摘要： In order to solve the problem that information indicating three or more points on a contour of a figure drawn by an electron beam writer cannot be more precisely acquired, an information processing apparatus includes: an accepting unit that accepts pattern information indicating a pattern figure, and actually observed contour information acquired using an image obtained by capturing an image of a figure drawn by an electron beam writer; a transforming information acquiring unit that acquires transforming information, which is information that minimizes the sum of squares of differences between convolution values corresponding to three or more corrected contour points of a given point spread function in a region indicated by the pattern figure indicated by the pattern information and a threshold regarding the convolution values; a corrected contour point acquiring unit that acquires corrected contour point information, which is information indicating three or more corrected contour points respectively corresponding to three or more actually observed contour points, using the transforming information; and an output unit that outputs the corrected contour point information. Accordingly, it is possible to more precisely acquire information indicating three or more points on a contour of a figure drawn by an electron beam writer.

公开(公告)号：US09690208B2

公开(公告)日：2017-06-27

申请号：US14102309

申请日：2013-12-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tsung-Hsin Yu

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01J37/302

CPC分类号： G03F7/70491 ,  H01J37/3023 ,  H01J37/3175 ,  H01J2237/30405 ,  H01J2237/31789

摘要： Systems and method directed to digital pattern generator (DPG) having a mirror array in an e-beam lithography system are discussed. The mirror array includes a first bank of mirrors and a second bank of mirrors with a combination logic structure interposing the first and second banks of mirrors. An output data line extends from the first bank of mirrors to the combinational logic structure. An input data line that carries data associated with the second bank of mirrors is also provided to the combinational logic structure. An output data line extends from the combinational logic structure to second data bank.

公开(公告)号：US09378926B2

公开(公告)日：2016-06-28

申请号：US14604488

申请日：2015-01-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ming-Zhang Kuo ,  Ping-Lin Yang ,  Cheng-Chung Lin ,  Osamu Takahashi ,  Sang Hoo Dhong

IPC分类号： G21K5/04 ,  H01J37/317 ,  H01J37/302

CPC分类号： H01J37/3175 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/2485 ,  H01J2237/31762

摘要： An embodiment of a method of lithography includes generating a beam of electrons. A first pixel and a second pixel are each configured to pattern the beam. Using time domain multiplex loading, the first and second pixels are controlled such that the beam is patterned. The patterning includes receiving a first clock signal and using the first clock signal to generate a second clock signal and a third clock signal. The second clock signal is sent to the first pixel and sending the third clock signal is sent to the second pixel.

摘要翻译： 光刻方法的一个实施例包括产生电子束。 第一像素和第二像素都被配置为对光束进行图案化。 使用时域多路复用加载，控制第一和第二像素使得光束被图案化。 图案化包括接收第一时钟信号并使用第一时钟信号来产生第二时钟信号和第三时钟信号。 第二时钟信号被发送到第一像素，并且发送第三时钟信号被发送到第二像素。

公开(公告)号：US20160172151A1

公开(公告)日：2016-06-16

申请号：US14567785

申请日：2014-12-11

申请人： KLA-Tencor Corporation

发明人： Christopher F. BEVIS

IPC分类号： H01J37/153 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01J37/153 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/0435 ,  H01J2237/1534 ,  H01J2237/303 ,  H01J2237/3175 ,  H01J2237/31774 ,  H01J2237/31788 ,  H01J2237/31789

摘要： One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.

摘要翻译： 一个实施例涉及一种用于电子束光刻系统中的像差校正的装置。 内部电极围绕图案生成装置，并且在内部电极周围存在至少一个外部电极。 内电极和外电极中的每一个在图案生成装置的平面中具有平坦表面。 电路被配置为将内部电压电平施加到所述内部电极，并且至少一个外部电压电平施加到所述至少一个外部电极。 可以设置电压电平以校正电子束光刻系统中的曲率场。 另一实施例涉及用于电子系统中的像差校正装置，例如电子束检查或检查或计量系统。 还公开了其它实施例，方面和特征。