公开(公告)号：US20180323318A1

公开(公告)日：2018-11-08

申请号：US16030035

申请日：2018-07-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael Engel ,  Mathias B. Steiner

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0384 ,  H01L31/109 ,  H01L31/101

CPC classification number: H01L31/0232 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/0384 ,  H01L31/03845 ,  H01L31/1013 ,  H01L31/109 ,  H01L31/18

Abstract: A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

公开(公告)号：US09905714B2

公开(公告)日：2018-02-27

申请号：US14207068

申请日：2014-03-12

Applicant: Banpil Photonics, Inc.

Inventor： Achyut Kumar Dutta

IPC: H01L31/0352 ,  H01L31/0384 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/035209 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/03845 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/04 ,  H01L31/18 ,  Y02E10/50

Abstract: Novel structures of photovoltaic cells (also called as solar cells) are provided. The cells are based on nanoparticles or nanometer-scaled wires, tubes, and/or rods, which are made of electrical materials covering semiconductors, insulators, and also metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

公开(公告)号：US09799790B2

公开(公告)日：2017-10-24

申请号：US15197743

申请日：2016-06-29

Applicant: Huazhong University of Science and Technology

Inventor： Hongwei Han ,  Zhiliang Ku

IPC: H01L31/18 ,  H01L51/42 ,  H01L31/0384 ,  H01L31/072

CPC classification number: H01L31/18 ,  H01L31/0384 ,  H01L31/072 ,  H01L51/422 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method for preparing a mesoscopic solar cell based on perovskite light absorption materials, the method including 1) preparing a hole blocking layer on a conductive substrate; 2) preparing and sintering a mesoporous nanocrystalline layer, an insulation separating layer, and a hole collecting layer on the hole blocking layer in order; and 3) drop-coating a precursor solution on the hole collecting layer, and allowing the precursor solution to penetrate pores of the mesoporous nanocrystalline layer via the hole collecting layer from top to bottom, and drying a resulting product to obtain a mesoscopic solar cell.

公开(公告)号：US20170271532A1

公开(公告)日：2017-09-21

申请号：US15615940

申请日：2017-06-07

Applicant: The Government of the United States of America

Inventor： Jesse A. Frantz ,  Jason D. Myers ,  Colin C. Baker ,  Jasbinder S. Sanghera ,  Steven C. Erwin

IPC: H01L31/0216 ,  H01L31/0368 ,  H01L31/0384 ,  H01L31/032 ,  C23C14/06

CPC classification number: H01L31/02167 ,  C23C14/0623 ,  H01L31/032 ,  H01L31/0368 ,  H01L31/0384 ,  Y02E10/50

Abstract: A passivated iron disulfide (FeS2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.

公开(公告)号：US09735384B2

公开(公告)日：2017-08-15

申请号：US15018321

申请日：2016-02-08

Applicant: InVisage Technologies, Inc.

Inventor： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC: H01L31/0336 ,  H01L51/42 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US09508944B2

公开(公告)日：2016-11-29

申请号：US13828708

申请日：2013-03-14

Applicant: THE BOEING COMPANY ,  UNIVERSITY OF WASHINGTON CENTER FOR COMMERCIALIZATION

Inventor： Marvi A. Matos ,  Alpana N. Ranade ,  Danilo C. Pozzo

IPC: H01L31/044 ,  H01L51/42 ,  H01L31/0384 ,  H01L31/0376 ,  H01L31/0256 ,  H01L51/00

CPC classification number: H01L51/4226 ,  H01L31/0376 ,  H01L31/0384 ,  H01L51/0004 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/4213 ,  H01L51/4233 ,  H01L2031/0344 ,  Y02E10/549 ,  Y02P70/521

Abstract: A hybrid organic-inorganic thin film is provided. The hybrid organic-inorganic thin film comprising: an organic-phase comprising a porous organic nanostructure comprised of an interpenetrating network having at least one dimension between 0.1 and 100 nm; and an inorganic phase at least partially distributed within the porosity of the organic phase. In a first aspect, the organic phase has a first band gap and the inorganic phase has a second band gap different from the first band gap. A method of producing an organic-inorganic energy harvesting device and a device therefrom comprising the hybrid organic-inorganic thin film is provided.

Abstract translation: 提供了混合有机 - 无机薄膜。 所述杂化有机 - 无机薄膜包括：有机相，其包含多孔有机纳米结构，所述多孔有机纳米结构由具有0.1至100nm的至少一个尺寸的互穿网络组成; 和至少部分分布在有机相的孔隙中的无机相。 在第一方面，有机相具有第一带隙，并且无机相具有不同于第一带隙的第二带隙。 提供了一种生产有机 - 无机能量收集装置的方法及其装置，包括混合有机 - 无机薄膜。

公开(公告)号：US09202952B2

公开(公告)日：2015-12-01

申请号：US13884552

申请日：2011-11-11

Applicant: Mark William Knight ,  Heidar Sobhani Khakestar ,  Peter Nordlander ,  Nancy J. Halas

Inventor： Mark William Knight ,  Heidar Sobhani Khakestar ,  Peter Nordlander ,  Nancy J. Halas

IPC: H01L31/0236 ,  H01L31/0384 ,  H01L31/108

CPC classification number: H01L31/02363 ,  H01L31/0384 ,  H01L31/108

Abstract: In general, the invention relates to a unit that includes a semiconductor and a plasmonic material disposed on the semiconductor, where a potential barrier is formed between the plasmonic material and the semiconductor. The unit further includes an insulator disposed on the semiconductor and adjacent to the plasmonic material and a transparent conductor disposed on the plasmonic material, where, upon illumination, the plasmonic material is excited resulting the excitation of an electron with sufficient energy to overcome the potential barrier.

Abstract translation: 通常，本发明涉及一种包括设置在半导体上的半导体和等离子体激元材料的单元，其中在等离子体激元材料和半导体之间形成势垒。 该单元还包括设置在半导体上并且邻近等离子体激元材料的绝缘体和设置在等离子体激元材料上的透明导体，其中在照射时等离子体激元材料被激发，导致电子以足够的能量激发以克服势垒 。

公开(公告)号：US20150007882A1

公开(公告)日：2015-01-08

申请号：US14376869

申请日：2013-02-04

Applicant: KONINKLIJKIE PHILIPS N.V.

Inventor： Luzia Silke Diedenhofen ,  Dirk Kornelis Gerhardus De Boer

IPC: H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/035227 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0384 ,  H01L31/0547 ,  Y02E10/52

Abstract: A solar cell comprises a layer (12) of p/n-doped semiconductor nanowires (22), at least one polymer layer (10), wherein the layer (12) of p/n-doped semiconductor nanowires (22) is at least partially embedded in the polymer layer (10), and the polymer layer (10) has a first surface (32) and a second surface (34), wherein, in a state of operation, the first surface (32) is closer to incident light (20) at a location of incidence than the second surface (34), and wherein an area of the first surface (32) is larger than an area of the second surface (34).

Abstract translation: 太阳能电池包括p / n掺杂的半导体纳米线（22）的层（12），至少一个聚合物层（10），其中p / n掺杂半导体纳米线（22）的层（12）至少为 部分地嵌入在聚合物层（10）中，聚合物层（10）具有第一表面（32）和第二表面（34），其中，在操作状态下，第一表面（32）更接近入射 在第二表面（34）的入射位置处的光（20），并且其中所述第一表面（32）的面积大于所述第二表面（34）的面积。

公开(公告)号：US08916905B2

公开(公告)日：2014-12-23

申请号：US13643499

申请日：2011-04-22

Applicant: Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

Inventor： Shintaro Kubo ,  Shuji Nakazawa ,  Rui Kamada ,  Seiji Oguri ,  Shinnosuke Ushio ,  Shuichi Kasai ,  Seiichiro Inai

IPC: H01L31/107 ,  H01L31/0384 ,  H01L21/02 ,  H01L27/142 ,  H01L31/032 ,  H01L31/0749 ,  H01L25/00

CPC classification number: H01L27/142 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0384 ,  H01L31/03923 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract translation: 本发明的目的是提供一种具有高光电转换效率的光电转换装置，其通过增加光吸收层和电极层之间的接触力来提高可靠性。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层含有化合物半导体。 光吸收层包括靠近电极层的第一层和位于第一层上的第二层。 第一层具有低于第二层的空隙率。

公开(公告)号：US20140224308A1

公开(公告)日：2014-08-14

申请号：US14130049

申请日：2012-06-28

Applicant: Martin Buskuhl

Inventor： Martin Buskuhl

IPC: H01L31/0352

CPC classification number: H01L31/035218 ,  H01L31/0322 ,  H01L31/035281 ,  H01L31/0384 ,  H01L31/03845 ,  Y02E10/52 ,  Y02E10/541

Abstract: Nanoparticle for a solar power system for increasing light utilisation, with a core selected from materials comprising metals, metal alloys, semi-conductors, electrically conductive non-metals, electrically conductive compounds and mixtures thereof, whereby at least one first shell is arranged around the core.

Abstract translation: 用于增加光利用率的太阳能发电系统的纳米颗粒，其中选择的材料包括金属，金属合金，半导体，导电非金属，导电化合物及其混合物，由此至少一个第一壳体围绕 核心。