公开(公告)号：US07813399B2

公开(公告)日：2010-10-12

申请号：US12240493

申请日：2008-09-29

Applicant: Wolfgang Schmid

Inventor： Wolfgang Schmid

IPC: H01S5/00

CPC classification number: H01S5/20 ,  H01S5/0425 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/16 ,  H01S5/204

Abstract: In an edge emitting semiconductor laser comprising an active layer (3) that generates laser radiation (13) and is embedded into a first waveguide layer (1), wherein the first waveguide layer (1) is arranged between a first cladding layer (4) and a second cladding layer (5) and is delimited by side facets (9) of the semiconductor laser in a lateral direction, a second waveguide layer (2), into which no active layer is embedded, adjoins the second cladding layer (5), the second waveguide layer (2) being optically coupled to the first waveguide layer (1) at least in partial regions (10, 11), and a third cladding layer (6) is arranged at a side of the second waveguide layer (2) that is remote from the first waveguide layer (1).

Abstract translation: 在包括产生激光辐射（13）并嵌入第一波导层（1）的有源层（3）的边缘发射半导体激光器中，其中第一波导层（1）被布置在第一覆层（4） 和第二覆层（5），并且由横向方向的半导体激光器的侧面（9）界定，没有有源层嵌入的第二波导层（2）与第二覆层（5）相邻， ，所述第二波导层（2）至少在部分区域（10,11）中光耦合到所述第一波导层（1），并且第三覆层（6）布置在所述第二波导层（2）的一侧 ），其远离第一波导层（1）。

公开(公告)号：US07792396B2

公开(公告)日：2010-09-07

申请号：US10990042

申请日：2004-11-16

Applicant: Fred A. Kish, Jr. ,  Frank H. Peters ,  Radhakrishnan L. Nagarajan ,  Richard P. Schneider

Inventor： Fred A. Kish, Jr. ,  Frank H. Peters ,  Radhakrishnan L. Nagarajan ,  Richard P. Schneider

IPC: G02B6/12 ,  G01R31/02

CPC classification number: G02B6/12011 ,  B82Y20/00 ,  G01R31/31728 ,  G01R31/318511 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/12021 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/12033 ,  G02B6/131 ,  G02B6/136 ,  G02B6/4204 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  G02F2203/69 ,  H01L31/125 ,  H01S5/0014 ,  H01S5/0085 ,  H01S5/02248 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/06832 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3408 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/50 ,  H04J14/02 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0258 ,  H04J14/0265 ,  H04J14/0276 ,  H04J14/0282

Abstract: Method and apparatus for utilizing a probe card for testing in-wafer photonic integrated circuits (PICs) comprising a plurality of in-wafer photonic integrated circuit (PIC) die formed in the surface of a semiconductor wafer where each PIC comprises one or more electro-optic components with formed wafer-surface electrical contacts. The probe card has a probe card body with at least one row of downwardly dependent, electrically conductive contact probes. The probe body is transversely translated over the surface of the wafer to a selected in-wafer photonic integrated circuit (PIC) die. Then, the contact probes of the probe card are brought into engagement with surface electrical contacts of the selected photonic integrated circuit (PIC) die for testing the operation of electro-optic components in the selected in-wafer photonic integrated circuit (PIC) die.

Abstract translation: 用于利用探针卡测试晶片间光子集成电路（PIC）的方法和装置，其包括形成在半导体晶片的表面中的多个晶片内的光子集成电路（PIC）管芯，其中每个PIC包括一个或多个电 - 具有形成的晶片表面电触点的光学元件。 探针卡具有带有至少一排向下依赖的导电接触探针的探针卡体。 探针体在晶片的表面上横向平移到选定的晶片内的光子集成电路（PIC）管芯。 然后，将探针卡的接触探针与所选择的光子集成电路（PIC）管芯的表面电触点接合，以测试所选择的晶片内光子集成电路（PIC）管芯中的电光部件的操作。

公开(公告)号：US07736926B2

公开(公告)日：2010-06-15

申请号：US11790486

申请日：2007-04-25

Applicant: Hideki Yagi

Inventor： Hideki Yagi

IPC: H01L21/00

CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S5/1203 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/2275 ,  H01S5/341 ,  H01S5/3412

Abstract: The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.

Abstract translation: 本发明提供了一种发光器件，其中其有源区域可以避免被等离子体工艺损坏。 该器件首先在半导体衬底上形成半导体层，接下来设置有蚀刻掩模。 使用掩模，将衬底上的半导体层干蚀刻以形成具有凹槽和台面的周期性结构。 通过OMVPE方法将有源区域埋入槽内。

公开(公告)号：US07734191B1

公开(公告)日：2010-06-08

申请号：US11609331

申请日：2006-12-11

Applicant: David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, Jr. ,  Ting-Kuang Chiang

Inventor： David F. Welch ,  Drew D. Perkins ,  Fred A. Kish, Jr. ,  Ting-Kuang Chiang

IPC: H04B10/00 ,  H04B10/04 ,  H04B10/08

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G02B6/12021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0268 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3408 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/25 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02 ,  H04J14/0279

Abstract: A forward error correction (FEC) communication device that includes a transmitter photonic integrated circuit (TxPIC) or a receiver photonic integrated circuit (RxPIC) and a FEC device for FEC coding at least one channel with a first error rate and at least one additional channel with a second error rate, wherein the first error rate is greater than the second error rate. The TxPIC chip is a monolithic multi-channel chip having an array of modulated sources integrated on the chip, each operating at a different wavelength, wherein at least one of the modulated sources is modulated with a respective FEC encoded signal. The TxPIC also includes an integrated wavelength selective combiner for combining the channels for transport over an optical link.

Abstract translation: 包括发射机光子集成电路（TxPIC）或接收机光子集成电路（RxPIC）的前向纠错（FEC）通信设备和用于FEC编码具有第一错误率的至少一个信道和至少一个附加信道的FEC设备 具有第二错误率，其中第一错误率大于第二错误率。 TxPIC芯片是具有集成在芯片上的调制源阵列的单片多通道芯片，每个调制源阵列以不同的波长工作，其中至少一个调制源以相应的FEC编码信号进行调制。 TxPIC还包括用于组合用于光链路传输的信道的集成波长选择组合器。

公开(公告)号：US07680169B2

公开(公告)日：2010-03-16

申请号：US10726141

申请日：2003-12-01

Applicant: Kyung-Hyun Park ,  Dae-Su Yee ,  Dong-Churl Kim ,  Young-Ahn Leem ,  Sung-Bock Kim

Inventor： Kyung-Hyun Park ,  Dae-Su Yee ,  Dong-Churl Kim ,  Young-Ahn Leem ,  Sung-Bock Kim

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/0657 ,  H01S5/1228 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/34306

Abstract: A multi-section semiconductor laser diode is disclosed. The laser diode includes a complex-coupled DFB laser section that includes a complex-coupled grating and an active structure for controlling the intensity of oscillating laser light, to oscillate laser light in a single mode, and an external cavity including a phase control section and an amplifier section, the phase control section having a passive waveguide that controls a phase variation of feedback laser light, the amplification section having an active structure that controls the strength of the feedback laser light. Currents are separately provided to the three sections to generate optical pulses with tuning range of tens of GHz. Applications include the clock recovery in the 3R regeneration of the optical communication.

Abstract translation: 公开了一种多段半导体激光二极管。 激光二极管包括复耦DFB激光器部分，其包括复耦合光栅和用于控制振荡激光的强度，以单一模式振荡激光的有源结构，以及包括相位控制部分的外部腔和 放大器部分，相位控制部分具有控制反馈激光的相位变化的无源波导，该放大部分具有控制反馈激光强度的有源结构。 电流分别提供给三个部分，以产生具有几十GHz调谐范围的光脉冲。 应用包括在光通信的3R再生中的时钟恢复。

公开(公告)号：US20100020836A1

公开(公告)日：2010-01-28

申请号：US12178028

申请日：2008-07-23

Applicant: Robert C. Hoffman

Inventor： Robert C. Hoffman

IPC: H01S5/10

CPC classification number: H01S5/1228 ,  H01S5/0654 ,  H01S5/1234 ,  H01S5/168 ,  H01S5/32316 ,  H01S2301/173

Abstract: Current channels, blocking areas, or strips in a semiconductor laser are used to channel injected current into the antinodal region of the optical standing wave present in the optical cavity, while restricting the current flow to the nodal regions. Previous devices injected current into both the nodal and antinodal regions of the wave, which is fed by the population inversion created in the active region by the injected electrons and holes, but inversion created in the nodal regions is lost to fluorescence or supports the creation of undesirable competing longitudinal modes, causing inefficiency. Directing current to the antinodal regions where the electric field is at its maximum causes a selected longitudinal mode to preferentially oscillate regardless of where the longitudinal mode lies with respect to the gain curve. In one embodiment, exacting fabrication of the Fabry-Perot cavity correlates the current channels to antinodal regions, vis-a vis current blocking areas, strips or segmented layers.

Abstract translation: 半导体激光器中的电流通道，阻挡区域或条带用于将注入的电流引导到存在于光学腔中的光驻波的抗结块区域，同时限制电流到节点区域。 以前的装置将电流注入到波的节点和抗结点区域中，该区域由被注入的电子和空穴在有源区域中产生的群体反转馈送，但是在节点区域中产生的反转会失去荧光或支持产生 不良竞争的纵向模式，导致效率低下。 将电流引导到电场处于其最大值的抗结区，导致所选择的纵向模式优先振荡，而不管纵向模式相对于增益曲线位于何处。 在一个实施例中，法布里 - 珀罗腔的严格制造使得当前通道与抗结块区域相对于电流阻挡区域，条带或分段层相关。

公开(公告)号：US07627012B2

公开(公告)日：2009-12-01

申请号：US12119607

申请日：2008-05-13

Applicant: Toshihiko Makino

Inventor： Toshihiko Makino

IPC: H01S5/00

CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434

Abstract: In general, a complex-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The complex-coupled DFB laser may be configured with a wavelength monitoring section and may be configured to provide facet power asymmetry. The wavelength monitoring section may include a second-order grating section configured to emit radiation (e.g., vertical radiation) from a side of the DFB laser for monitoring.

Abstract translation: 通常，复耦合分布反馈（DFB）半导体激光器包括由通过激光腔的有源区域的至少一部分的凹槽形成的光栅。 复耦DFB激光器可以配置有波长监测部分，并且可以被配置为提供小平面功率不对称性。 波长监视部分可以包括被配置为从用于监视的DFB激光器侧发射辐射（例如，垂直辐射）的二阶光栅部分。

公开(公告)号：US07583719B2

公开(公告)日：2009-09-01

申请号：US11280517

申请日：2005-08-24

Applicant: Toshihiko Makino

Inventor： Toshihiko Makino

IPC: H01S3/08

CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434

Abstract: A distributed feedback semiconductor laser may have (1) a controlled complex-coupling coefficient which is not affected by grating etching depth variation, and (2) facet power asymmetry with no facet reflection which eliminates a random effect of facet grating phase. The device comprises a multiple-quantum-well active region, and a complex-coupled grating formed by periodically etching grooves through a part of the active region. The semiconductor materials for a barrier layer where the groove etching is to be stopped, a regrown layer in the etched groove, and a laser cladding layer, are chosen all the same, so as to form an active grating entirely buried in the same material, providing a complex-coupling coefficient which is defined independently of the etching depth. Facet power symmetry may also be provided by composing the laser cavity of two sections (“front” and “back” sections) having different (“front” and “back”) Bragg wavelengths.

Abstract translation: 分布式反馈半导体激光器可以具有（1）不受光栅蚀刻深度变化影响的受控复合耦合系数，以及（2）无面反射的面功率不对称性，消除了小面光栅相位的随机效应。 该器件包括多量子阱有源区，以及通过周期性地蚀刻通过有源区的一部分的沟槽形成的复耦合光栅。 选择要停止凹槽蚀刻的阻挡层的半导体材料，蚀刻槽中的再生长层和激光熔覆层，全部相同，以形成完全埋入同一材料中的有源光栅， 提供了独立于蚀刻深度定义的复合耦合系数。 也可以通过组合具有不同（“前”和“后”）布拉格波长的两个部分（“前”和“后”部分）的激光腔来提供面功率对称性。

公开(公告)号：US20090202196A1

公开(公告)日：2009-08-13

申请号：US12345434

申请日：2008-12-29

Applicant: Fred A. Kish, JR. ,  Charles H. Joyner ,  David F. Welch ,  Robert B. Taylor ,  Alan C. Nilsson

Inventor： Fred A. Kish, JR. ,  Charles H. Joyner ,  David F. Welch ,  Robert B. Taylor ,  Alan C. Nilsson

IPC: G02B6/12

CPC classification number: G02B6/12033 ,  B82Y20/00 ,  G02B6/02204 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/124 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/0085 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/50 ,  H04B10/506 ,  H04B10/572 ,  H04J14/02

Abstract: An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output. A wavelength control system coupled to the first and second wavelength tuning elements and to said wavelength monitoring unit to receive the sampled combined signal output. The wavelength control system adjusts the respective wavelengths of operation of the modulated sources to approximate or to be chirped to the standardized wavelength grid and for adjusting the optical combiner wavelength grid passband response to approximate the standardized wavelength grid.

Abstract translation: 光发射机包括单片发射机光子集成电路（TxPIC）芯片，其包括形成在PIC芯片上的调制源的阵列，并且具有接近标准化波长网格并提供不同波长的信号输出的不同工作波长。 在具有近似于标准化波长网格的波长网格的波长网格通带响应的PIC芯片上形成波长选择性组合器。 调制源的信号输出光耦合到波长选择组合器的输入，以产生从组合器输出的组合信号。 耦合到每个调制源的第一波长调谐元件和耦合到波长选择组合器的第二波长调谐元件。 波长监测单元耦合到波长选择组合器以对组合的信号输出进行采样。 波长控制系统耦合到第一和第二波长调谐元件以及所述波长监视单元以接收采样的组合信号输出。 波长控制系统调整调制源的各个波长的波长近似于或被啁啾到标准化波长网格，并且用于调整光合并波长网格通带响应以近似标准化的波长网格。

公开(公告)号：US07512295B2

公开(公告)日：2009-03-31

申请号：US11766077

申请日：2007-06-20

Applicant: David F. Welch ,  Vincent G. Dominic ,  Fred A. Kish, Jr. ,  Mark J. Missey ,  Radhakrishnan L. Nagarajan ,  Atul Mathur ,  Frank H. Peters ,  Robert B. Taylor ,  Matthew L. Mitchell ,  Alan C. Nilsson ,  Stephen G. Grubb ,  Richard P. Schneider ,  Charles H. Joyner ,  Jonas Webjorn ,  Drew D. Perkins

Inventor： David F. Welch ,  Vincent G. Dominic ,  Fred A. Kish, Jr. ,  Mark J. Missey ,  Radhakrishnan L. Nagarajan ,  Atul Mathur ,  Frank H. Peters ,  Robert B. Taylor ,  Matthew L. Mitchell ,  Alan C. Nilsson ,  Stephen G. Grubb ,  Richard P. Schneider ,  Charles H. Joyner ,  Jonas Webjorn ,  Drew D. Perkins

IPC: G02B6/12

CPC classification number: G02B6/12011 ,  B82Y20/00 ,  G01R31/31728 ,  G01R31/318511 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12019 ,  G02B6/12021 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/12033 ,  G02B6/131 ,  G02B6/136 ,  G02B6/4204 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  G02F2203/69 ,  H01L31/125 ,  H01S5/0014 ,  H01S5/0085 ,  H01S5/02248 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/06832 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3408 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H04B10/2914 ,  H04B10/50 ,  H04J14/02 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0258 ,  H04J14/0265 ,  H04J14/0276 ,  H04J14/0282

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract translation: 一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器 并从芯片提供输出波导上的组合输出信号。 调制源，组合器和输出波导均集成在同一芯片上。