公开(公告)号：US20240102156A1

公开(公告)日：2024-03-28

申请号：US18462938

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/04 ,  C23C16/32 ,  C23C16/34

CPC classification number: C23C16/045 ,  C23C16/325 ,  C23C16/342

Abstract: Methods and systems for mixing precursors are disclosed. Systems and methods disclosed herein comprise mixing a first precursor and a second precursor in a mixing chamber. The first precursor and the second precursor can be provided to the mixing chamber in the gas phase or as liquids.

公开(公告)号：US11940785B2

公开(公告)日：2024-03-26

申请号：US17498999

申请日：2021-10-12

Applicant: ASM IP Holding B.V.

Inventor： Taku Omori

IPC: G05B23/02 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B23/0235 ,  G05B23/0272 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67011

Abstract: Examples of a predictive maintenance method includes determining whether analog data measured in a substrate treatment that has used a recipe exceeds an allowable threshold which corresponds to the recipe and has been determined beforehand, and notifying, in a case where it is determined that the analog data exceeds the allowable threshold in the determination, a user that a relating module which has been associated with the analog data beforehand has deteriorated.

公开(公告)号：US20240096685A1

公开(公告)日：2024-03-21

申请号：US18509543

申请日：2023-11-15

Applicant: ASM IP Holding B.V.

Inventor： KiHyun Kim ,  Sam Kim ,  Rutvij Naik

IPC: H01L21/687 ,  B65G47/90

CPC classification number: H01L21/68707 ,  B65G47/90

Abstract: An adjustable joint for insertion into a linkage of a substrate handler utilized for substrate processing. The adjustable joint allows for adjusting the pitch and roll of an attached link. Such adjustment may permit aligning a pickup surface of an end effector to a desired plane. Once adjusted, the joint may be fixed to maintain the desired orientation of the attached link. The adjustable joint allows for correcting deflection of a pickup surface of an end effector relative to a desired pickup plane due to, for example, drooping caused by high temperature usage, mechanical tolerances and/or installation errors.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20240096632A1

公开(公告)日：2024-03-21

申请号：US18367491

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Charles Dezelah ,  Jan Willem Maes

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/16 ,  C23C16/45527 ,  C23C16/45557

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

公开(公告)号：US20240096619A1

公开(公告)日：2024-03-21

申请号：US18307489

申请日：2023-04-26

Applicant: ASM IP Holding, B.V.

Inventor： Brendan Timothy Padraig Marozas ,  Rami Khazaka

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02579 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/3065

Abstract: Methods and systems for selectively forming phosphorus-doped epitaxial material. The methods can be used to selectively form the phosphorus-doped epitaxial material within a gap from the bottom upward. Exemplary methods can be used to, for example, form source and/or drain regions in field effect transistor devices, such as in gate-all-around field effect transistor devices.

公开(公告)号：US20240087944A1

公开(公告)日：2024-03-14

申请号：US18243173

申请日：2023-09-07

Applicant: ASM IP Holding B.V.

Inventor： George Brad Jackson ,  Rohan Rajeev Puranik ,  Todd Robert Dunn ,  Yingzong Bu ,  Ruchik Jayeskumar Bhatt

IPC: H01L21/687

CPC classification number: H01L21/68742

Abstract: A lift pin assembly includes a holder to engage and secure the lift pin and a bellow to actuate the lift pin and the holder linearly and vertically. The holder includes three pieces that connect together to secure the lift pin within the holder. The holder includes a first piece having a recessed area, a second piece that nests within the recessed area, and a third piece adjacent the first and second pieces. The second piece contains a threaded hole to receive and secure the lift pin and the third piece contains a through-hole that aligns with the threaded hole of the second piece.

公开(公告)号：US20240087893A1

公开(公告)日：2024-03-14

申请号：US18463433

申请日：2023-09-08

Applicant: ASM IP Holding, B.V.

Inventor： Daniele Piumi ,  Ivo Raaijmakers

IPC: H01L21/033 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/0332

Abstract: Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a mandrel on a substrate. Forming the mandrel comprises executing a plurality of etching cycles to thin a structure.

公开(公告)号：US11923190B2

公开(公告)日：2024-03-05

申请号：US16988374

申请日：2020-08-07

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart

IPC: C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/26 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224 ,  H01L21/76229

Abstract: A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US20240071747A1

公开(公告)日：2024-02-29

申请号：US18238020

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  Hongsuk Kim ,  KiHun Kim ,  SangHeon Yong ,  JuHyuk Park

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  C23C16/045

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.