公开(公告)号：US09774243B2

公开(公告)日：2017-09-26

申请号：US14956660

申请日：2015-12-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier ,  Muriel Nina

IPC: H02M7/19 ,  H02M1/32 ,  H02M1/36 ,  H02M7/06 ,  H02M7/12 ,  H02M7/162 ,  H02M7/515

CPC classification number: H02M1/32 ,  H02M1/36 ,  H02M7/062 ,  H02M7/125 ,  H02M7/162 ,  H02M7/515 ,  H02M2001/325

Abstract: An AC/DC converter receives an AC voltage at a first terminal and a second terminal. A rectifying bridge has a first input terminal coupled via a resistive element to the first terminal and a second input terminal connected to the second terminal, with output terminals of the rectifying bridge coupled to third and fourth terminals of the converter for generating a DC voltage. A first controllable rectifying thyristor couples the first terminal to the third terminal and a second controllable rectifying thyristor couples the fourth terminal to the first terminal. The resistive element functions as an inrush protection device during a first phase when the thyristors are turned off. In a second phase, the thyristors are selectively actuated.

公开(公告)号：US20170110970A1

公开(公告)日：2017-04-20

申请号：US15157711

申请日：2016-05-18

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Tours) SAS

Inventor： Roberto Larosa ,  Giulio Zoppi ,  Laurent Gonthier

IPC: H02M3/335 ,  H02M1/42 ,  H02M1/08

CPC classification number: H02M3/33507 ,  H02M1/08 ,  H02M1/081 ,  H02M1/36 ,  H02M1/42 ,  H02M7/062 ,  H02M7/125 ,  H02M2001/0006

Abstract: A rectifier bridge circuit includes a first SCR/IGBT switch and a second SCR/IGBT switch coupled to a circuit input to receive an ac input voltage. The first and second SCR/IGBT switches are alternatively switchable to generate a rectified voltage at a circuit output. Control currents coupled to control terminals of the first and second SCR/IGBT switches are power supply sourced from an auxiliary dc source generated by rectifying the ac input voltage. The control currents are generated by current sources coupled between the auxiliary dc source and the control terminals of the first and second SCR/IGBT switches. The current sources are selectively activatable to produce gating currents for switching on and off the first and second SCR/IGBT switches. A controller unit is provided to control the current sources via level shifter circuits. The control implements progressive conduction time of the first and second SCR/IGBT switches so as to provide inrush current limitation.

公开(公告)号：US20170077225A1

公开(公告)日：2017-03-16

申请号：US15363616

申请日：2016-11-29

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： ARNAUD YVON

IPC: H01L29/06 ,  H01L21/306 ,  H01L29/872 ,  H01L21/02 ,  H01L29/20 ,  H01L29/36

CPC classification number: H01L29/0661 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/30625 ,  H01L21/3228 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66212 ,  H01L29/872

Abstract: A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.

Abstract translation: 一种用于处理第一导电类型的掺杂氮化镓衬底的方法，其具有出现在其表面的至少一个侧面上的位错。 该方法可以包括：a）在每个错位出现的地方形成从所述至少一个表面延伸到所述基底中的凹部; 以及b）用所述第二导电类型的掺杂氮化镓填充所述凹部。

公开(公告)号：US09541936B2

公开(公告)日：2017-01-10

申请号：US14548386

申请日：2014-11-20

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand Rivet ,  David Jouve

IPC: G05F1/10 ,  G05F1/613 ,  G05F1/46 ,  H03K17/10

CPC classification number: G05F1/613 ,  G05F1/468 ,  H03K17/102

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。

公开(公告)号：US09537582B2

公开(公告)日：2017-01-03

申请号：US13675847

申请日：2012-11-13

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Sophie Ngo ,  Arnaud Florence ,  Daniel Alquier ,  Edgard Jeanne

IPC: H04B1/02 ,  H04B11/00

CPC classification number: H04B11/00

Abstract: A data transmission device includes a coder configured to code the data into a multifrequency signal. A first array of ultrasonic transducers with a vibrating membrane is disposed on a first surface of a wafer. The first array configured to convert the signal into a multifrequency acoustic signal propagating in the wafer. A second array of ultrasonic transducers is disposed on a second surface of the wafer. The second array includes at least two assemblies of vibrating membrane ultrasonic transducers having resonance frequencies equal to two different frequencies of the multifrequency signal.

Abstract translation: 数据传输设备包括被配置为将数据编码为多频信号的编码器。 具有振动膜的第一阵列超声换能器设置在晶片的第一表面上。 第一阵列被配置为将信号转换成在晶片中传播的多频声信号。 超声波换能器的第二阵列设置在晶片的第二表面上。 第二阵列包括具有等于多频信号的两个不同频率的谐振频率的振动膜超声换能器的至少两个组件。

公开(公告)号：US09530875B2

公开(公告)日：2016-12-27

申请号：US14990194

申请日：2016-01-07

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Samuel Menard ,  Gael Gautier

IPC: H01L29/747 ,  H01L29/87 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/66386 ,  H01L21/2885 ,  H01L21/76202 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/32 ,  H01L29/456 ,  H01L29/747 ,  H01L29/87

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

公开(公告)号：US20160329417A1

公开(公告)日：2016-11-10

申请号：US14957803

申请日：2015-12-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague

IPC: H01L29/747 ,  H01L27/082 ,  H01L25/065 ,  H01L27/02

CPC classification number: H01L29/747 ,  H01L25/0652 ,  H01L25/072 ,  H01L27/0296 ,  H01L27/082 ,  H01L27/0823 ,  H01L29/1004 ,  H01L29/732 ,  H01L2224/06181 ,  H01L2224/48137

Abstract: A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.

Abstract translation: 开关包括三个部件。 每个部件包括具有交替导电类型的三个半导体区域的堆叠以及三个半导体区域中的第一个具有与第一半导体区域相反的类型的控制区域。 第一和第二部件的第一半导体区域具有相同的导电类型，并且第一和第三部件的第一半导体区域具有相反的导电类型。 第一部件的第一半导体区域连接到第二和第三部件的控制区域。 第二和第三部件的第一半导体区域连接到第一开关端子，第一，第二和第三部件的第三半导体区域连接到第二开关端子，并且第一部件的控制区域连接到 第三开关端子。

公开(公告)号：US20160294088A1

公开(公告)日：2016-10-06

申请号：US14956202

申请日：2015-12-01

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Edet ,  Christian Nopper

IPC: H01R12/71 ,  H01R13/66

CPC classification number: H01R12/71 ,  H01R12/716 ,  H01R13/665 ,  H05K1/0298 ,  H05K1/14 ,  H05K1/185 ,  H05K2201/047

Abstract: An electrical connector includes a frame delimiting an elongated open cavity, and having two parallel long sides provided with contact areas capable of cooperating with contact areas of a complementary electrical connector. Each long side is formed of a multilayer printed circuit board.

Abstract translation: 电连接器包括限定细长开放空腔的框架，并且具有两个平行的长边，其设置有能够与互补电连接器的接触区域配合的接触区域。 每个长边由多层印刷电路板形成。

公开(公告)号：US09406970B2

公开(公告)日：2016-08-02

申请号：US13957518

申请日：2013-08-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Dominique Genard

IPC: H01M10/04 ,  H01M10/0525 ,  H01M10/0585 ,  H01M4/04

CPC classification number: H01M10/0436 ,  H01M4/0423 ,  H01M10/0525 ,  H01M10/0585 ,  Y02E60/122 ,  Y02P70/54

Abstract: A method for manufacturing a lithium-ion type battery including the steps of forming in a substrate a recess having lateral walls having a re-entrant profile; depositing, by successive non-conformal physical vapor depositions, a stack of the different layers forming a lithium-ion battery, this stack having a thickness smaller than the depth of the recess; depositing on the structure a filling layer filling the space remaining in the recess; and planarizing the structure to expose the upper surface of the stack.

Abstract translation: 一种锂离子型电池的制造方法，其特征在于，在基板上形成具有侧壁的具有凹入轮廓的凹部的工序; 通过连续的非保形物理气相沉积沉积形成锂离子电池的不同层的堆叠，该堆叠的厚度小于凹部的深度; 在所述结构上沉积填充剩余在所述凹部中的空间的填充层; 并平坦化结构以暴露堆叠的上表面。

公开(公告)号：US20160181907A1

公开(公告)日：2016-06-23

申请号：US14838519

申请日：2015-08-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand RIVET ,  David Jouve

IPC: H02M1/088

CPC classification number: H05B33/0887 ,  G05F1/577 ,  H03K17/12 ,  H03K17/14 ,  H03K17/74 ,  H05B33/0815

Abstract: A circuit is for balancing currents flowing through a parallel assembly of semiconductor components of the same type. The circuit may include a respective regulation circuit for each semiconductor component. Each regulation circuit may include a comparator of a first signal representative of the current flowing through the component with a reference signal, and a resistive element of a changeable resistance and controlled by the comparator.

Abstract translation: 电路用于平衡流过相同类型的半导体部件的并联组件的电流。 电路可以包括用于每个半导体部件的相应调节电路。 每个调节电路可以包括代表通过参考信号流过组件的电流的第一信号的比较器和可变电阻并由比较器控制的电阻元件。