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    Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
    102.
    发明授权
    Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权
    用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件

    公开(公告)号：US07667297B2

    公开(公告)日：2010-02-23

    申请号：US11423026

    申请日：2006-06-08

    申请人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

    发明人： Reiner Barthelmess ,  Anton Mauder ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze

    IPC分类号： H01L29/167 ,  H01L29/30

    CPC分类号： H01L29/0834 ,  H01L21/263 ,  H01L21/324 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/861

    摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

    摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

    High blocking semiconductor component comprising a drift section
    103.
    发明授权
    High blocking semiconductor component comprising a drift section 有权
    高阻塞半导体元件包括漂移部分

    公开(公告)号：US07436023B2

    公开(公告)日：2008-10-14

    申请号：US11464004

    申请日：2006-08-11

    申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

    发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

    IPC分类号： H01L23/58

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/8083 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).

    摘要翻译： 具有形成在半导体本体（1）中的漂移路径（2）的半导体部件由第一导电型半导体材料构成。 漂移路径（2）布置在至少一个第一和第二电极（3,4）之间，并具有至少一个沟槽（18）形式的沟槽结构。 被称为高k材料并且具有相对介电常数εε的电介质材料，其中ε= r / O 2 = 20布置在沟槽结构中，使得在 第一电导型的至少一个高k材料区域（5）和一个半导体材料区域（6）被布置在漂移路径（2）的区域中。

    Ohmic contact configuration
    104.
    发明授权
    Ohmic contact configuration 有权
    欧姆接触配置

    公开(公告)号：US07317252B2

    公开(公告)日：2008-01-08

    申请号：US10686849

    申请日：2003-10-16

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Helmut Strack

    IPC分类号： H01L23/48

    CPC分类号： H01L29/7802 ,  H01L29/1604 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7396 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A contact configuration has an ohmic contact between a metalization layer and a semiconductor body of monocrystalline semiconductor material. An amorphous semiconductor layer is formed between the metalization layer and the monocrystalline semiconductor body. The layer is formed of the same semiconductor material as the body. The contact configuration is either produced by applying amorphous semiconductor material on the semiconductor body (e.g., sputtering, vapor deposition, glow discharge) or by damage formation in the semiconductor body.

    摘要翻译： 接触构造在金属化层和单晶半导体材料的半导体本体之间具有欧姆接触。 在金属化层和单晶半导体本体之间形成非晶半导体层。 该层由与本体相同的半导体材料形成。 接触构造是通过在半导体本体上施加非晶半导体材料（例如溅射，气相沉积，辉光放电）或通过半导体本体中的损伤形成来制造的。

    IGBT device and related device having robustness under extreme conditions
    105.
    发明申请
    IGBT device and related device having robustness under extreme conditions 有权
    IGBT器件及相关器件在极端条件下具有鲁棒性

    公开(公告)号：US20070170514A1

    公开(公告)日：2007-07-26

    申请号：US11713226

    申请日：2007-03-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Pfirsch ,  Elmar Falck ,  Josef Lutz

    IPC分类号： H01L29/76

    CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/861

    摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

    摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。 半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。 半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。 多个半导体区域位于场停止层内。

    Semiconductor component and corresponding fabrication/mounting method
    107.
    发明申请
    Semiconductor component and corresponding fabrication/mounting method 有权
    半导体元件及相应的制造/安装方法

    公开(公告)号：US20050121795A1

    公开(公告)日：2005-06-09

    申请号：US10977120

    申请日：2004-10-29

    申请人： Anton Mauder

    发明人： Anton Mauder

    IPC分类号： H01L23/58 ,  H01L23/48

    CPC分类号： H01L23/48 ,  H01L23/3178 ,  H01L23/585 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor component (1) has a substrate (21) and a structure (22, 23) formed from semiconductor/insulator/conductor layers (24 to 26) on/in the substrate (21). Furthermore, there is an insulator layer (32) which covers the surface and at least parts of the side walls of the semiconductor component (1) but leaves clear part of the surface of the structure (22, 23). Furthermore, there is a conductor layer (33) which is applied to the insulator layer (32) and additionally covers that part of the surface region of the structure (22, 23) which has been left clear by the insulator layer (32).

    摘要翻译： 半导体部件（1）具有基板（21）和由基板（21）上的半导体/绝缘体/导体层（24〜26）形成的结构（22,23）。 此外，存在覆盖半导体部件（1）的表面和至少部分侧壁但留下结构（22,23）的表面的透明部分的绝缘体层（32）。 此外，存在施加到绝缘体层（32）的导体层（33），并且还覆盖已被绝缘体层（32）清除的结构（22,23）的表面区域的那部分。

    Power semiconductor component
    108.
    发明申请
    Power semiconductor component 有权
    功率半导体元件

    公开(公告)号：US20050116287A1

    公开(公告)日：2005-06-02

    申请号：US10941421

    申请日：2004-09-15

    申请人： Elmar Falck ,  Anton Mauder

    发明人： Elmar Falck ,  Anton Mauder

    IPC分类号： H01L29/06 ,  H01L29/861 ,  H01L29/76

    CPC分类号： H01L29/861 ,  H01L29/0661

    摘要： A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region adjoining the first conduction type region at the third surface. A trench extending from the first surface into the semiconductor body, the trench defined by a trench bottom and an arcuately shaped sidewall.

    摘要翻译： 公开了适合用作功率半导体元件的半导体元件和制造半导体元件的方法。 在一个实施例中，半导体部件包括在第三表面具有第一表面，第二表面，第三表面，第一导电类型区域和邻接第一导电类型区域的第二导电类型区域的半导体本体。 从第一表面延伸到半导体本体中的沟槽，沟槽由沟槽底部和弧形形状的侧壁限定。