Radiation source, lithographic apparatus and device manufacturing method
    109.
    发明授权
    Radiation source, lithographic apparatus and device manufacturing method 有权
    辐射源,光刻设备和器件制造方法

    公开(公告)号:US08685632B2

    公开(公告)日:2014-04-01

    申请号:US13058788

    申请日:2009-07-13

    IPC分类号: G03F7/20 G21K1/00

    摘要: A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.

    摘要翻译: 光刻设备包括被配置为产生包含期望辐射和使用等离子体的不期望辐射的辐射束的源,被配置为调节辐射束并在光刻设备操作期间接收氢气的照明系统,以及构造成保持 图案形成装置。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 衬底台被构造成保持衬底,并且投影系统被配置为将图案化的辐射束投影到衬底的目标部分上。 光刻设备被配置为使得进入投影系统的辐射束包括由等离子体产生的不期望辐射的至少50%,并且包括与氢气相互作用以产生氢自由基的辐射波长。