Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
A current controller for a multi-level current mode driver. The current controller includes a multi-level voltage reference and at least one source calibration signal. A comparator is coupled by a coupling network to the multi-level voltage reference and the at least one source calibration signal. A selected voltage is applied from the multi-level voltage reference and a selected source calibration signal is applied from the at least one source calibration signal to the comparator.
Abstract:
A controller device for controlling a synchronous dynamic random access memory device. The controller device includes output driver circuitry to output block size information to the memory device. The block size information defines an amount of data to be output by the memory device. In addition, the controller device includes input receiver circuitry to receive the amount of data output by the memory device.
Abstract:
An integrated circuit device which includes an array of dynamic memory cells. The integrated circuit device comprises an input receiver to sample an operation code synchronously with respect to a transition of a clock signal, the operation code indicating a read operation. The integrated circuit device also comprises an output driver to output data in response to the operation code, wherein the data is output after a number of clock cycles of the clock signal transpire.
Abstract:
A synchronous memory device including an array of memory cells. The memory device includes a plurality of sense amplifiers, coupled to the array of memory cells, to sense data. The memory device further includes input receiver circuitry to sample an operation code synchronously with respect to a transition of an external clock signal. The operation code including precharge information and, in response to the precharge information, the plurality of sense amplifiers are automatically precharged after the data is sensed.
Abstract:
A synchronous memory device and methods of operation and controlling such a device. The method of controlling the memory device includes providing a value which is representative of a number of cycles of an external clock signal to transpire after which the memory device responds to a read request. The method further includes providing block size information to the memory device, wherein the block size information defines an amount of data to be output by the memory device in response to a read request. The method further includes receiving the amount of data, after the number of clock cycles of the external clock signal transpire.
Abstract:
A synchronous memory device and a method of controlling the memory device. The memory device including at least one memory section having a plurality of memory cells. The memory device includes a first internal register to store a value which is indicative of a number of clock cycles to transpire before the memory device responds to a read request. The memory device also includes a second internal register to store an identification value to identify the memory device on a bus.
Abstract:
A memory device having a plurality of memory cells, the memory device comprising clock receiver circuitry to receive an external clock signal, and input receiver circuitry to sample, in response to a write request, a first portion of data after a number of clock cycles of the external clock signal transpire. The first portion of data is sampled synchronously with respect to the external clock signal.
Abstract:
A method of operation of a synchronous memory device having at least one memory section which includes a plurality of memory locations. The method comprises receiving an external clock signal having a fixed frequency, receiving a read request, including addressing information, synchronously with respect to the external clock signal, initiating an internal memory addressing operation, in response to the read request, and outputting data onto the external bus synchronously with respect to the external clock signal. The synchronous memory device may include interface circuitry, coupled to an external bus, to receive a write request packet synchronously with respect to an external clock. The write request packet may include N bits of information and the external bus includes M number of signal lines wherein N is substantially greater than M. The synchronous memory device may also include input receiver circuitry, coupled to the external bus, to receive data from the external bus synchronously with respect to the external clock wherein the received data is stored in the synchronous memory device in response to the write request packet.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 9 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.