公开(公告)号：US20140264836A1

公开(公告)日：2014-09-18

申请号：US13839816

申请日：2013-03-15

Applicant: QUALCOMM INCORPORATED

Inventor： Dexter Tamio Chun ,  Jungwon Suh ,  Urmi Ray ,  Shiqun Gu

IPC: H01L23/498 ,  H01L21/56

CPC classification number: H01L23/16 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/3737 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0652 ,  H01L25/18 ,  H01L2224/13 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81203 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2224/11

Abstract: An integrated circuit package is disclosed that includes a first-pitch die and a second-pitch die. The second-pitch die interconnects to the second-pitch substrate through second-pitch substrates. The first-pitch die interconnects through first-pitch interconnects to an interposer adapter. The pitch of the first-pitch interconnects is too fine for the second-pitch substrate. But the interposer adapter interconnects through second-pitch interconnects to the second-pitch substrate and includes through substrate vias so that I/O signaling between the first-pitch die and the second-pitch die can be conducted through the second-pitch substrate and through the through substrate vias in the interposer adapter.

Abstract translation: 公开了一种集成电路封装，其包括第一间距管芯和第二间距管芯。 第二间距模具通过第二间距基板与第二间距基板相互连接。 第一间距模具通过第一间距互连件互连到插入器适配器。 第一节距互连的间距对于第二间距衬底来说太细了。 但是插入器适配器通过第二间距互连件连接到第二间距衬底并且包括通过衬底通孔，使得第一间距管芯和第二间距管芯之间的I / O信号可以通过第二间距衬底并且通过 贯穿衬底通孔插入插座适配器中。

公开(公告)号：US20140225248A1

公开(公告)日：2014-08-14

申请号：US13783124

申请日：2013-03-01

Applicant: QUALCOMM INCORPORATED

Inventor： Brian M. Henderson ,  Shiqun Gu

IPC: H01L23/34 ,  H01L21/50

CPC classification number: H01L23/5384 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/34 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/5286 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/73259 ,  H01L2224/92224 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/15184 ,  H01L2924/15311

Abstract: Some implementations provide an apparatus that includes a package substrate, a first die coupled to the package substrate, and a second die coupled to the first die. The die package also includes a heat spreader coupled to the second die, the heat spreader configured to (i) dissipate heat from the second die, and (ii) provide an electrical path for a power signal to the second die. In some implementations, the die package also includes a molding surrounding the first die and the second die. The die package also includes several through mold vias (TMVs) coupled to the heat spreader. The TMVs are configured to provide an electrical path for the power signal to the second die through the heat spreader. In some implementations, the TMVs traverse the molding.

Abstract translation: 一些实施方案提供了一种装置，其包括封装衬底，耦合到封装衬底的第一裸片以及耦合到第一裸片的第二裸片。 模具封装还包括耦合到第二管芯的散热器，散热器配置成（i）从第二管芯散热，以及（ii）为第二管芯提供用于功率信号的电路径。 在一些实施方案中，模具包装还包括围绕第一模具和第二模具的模制件。 模具封装还包括耦合到散热器的多个通孔（TMV）。 TMV被配置为通过散热器为第二管芯提供电力信号的电路。 在一些实施方案中，TMV穿过模制件。

公开(公告)号：US20140225208A1

公开(公告)日：2014-08-14

申请号：US13777475

申请日：2013-02-26

Applicant: QUALCOMM INCORPORATED

Inventor： Shiqun Gu ,  Ron Zhang ,  Vidhya Ramachandran ,  Dong Wook Kim

IPC: H01L43/02

CPC classification number: H01L43/12 ,  H01L23/3121 ,  H01L23/552 ,  H01L23/645 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2924/0002 ,  H01L2924/1435 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Some implementations provide a die that includes a magnetoresistive random access memory (MRAM) cell array that includes several MRAM cells. The die also includes a first ferromagnetic layer positioned above the MRAM cell array, a second ferromagnetic layer positioned below the MRAM cell array, and several vias positioned around at least one MRAM cell. The via comprising a ferromagnetic material. In some implementations, the first ferromagnetic layer, the second ferromagnetic layer and the several vias define a magnetic shield for the MRAM cell array. The MRAM cell may include a magnetic tunnel junction (MTJ). In some implementations, the several vias traverse at least a metal layer and a dielectric layer of the die. In some implementations, the vias are through substrate vias. In some implementations, the ferromagnetic material has high permeability and high B saturation.

Abstract translation: 一些实施方案提供了包括包括几个MRAM单元的磁阻随机存取存储器（MRAM）单元阵列的管芯。 芯片还包括位于MRAM单元阵列上方的第一铁磁层，位于MRAM单元阵列下方的第二铁磁层和位于至少一个MRAM单元周围的几个通孔。 通孔包括铁磁材料。 在一些实施方案中，第一铁磁层，第二铁磁层和几个通孔限定用于MRAM单元阵列的磁屏蔽。 MRAM单元可以包括磁性隧道结（MTJ）。 在一些实施方案中，几个通孔至少穿过管芯的金属层和电介质层。 在一些实施方案中，通孔通过衬底通孔。 在一些实施方案中，铁磁材料具有高磁导率和高B饱和度。

公开(公告)号：US20140043756A1

公开(公告)日：2014-02-13

申请号：US14056212

申请日：2013-10-17

Applicant: Qualcomm Incorporated

Inventor： Shiqun Gu ,  Matthew Michael Nowak ,  Thomas Robert Toms

IPC: H05K7/20

CPC classification number: H05K7/20 ,  H01L23/38 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2224/05599

Abstract: Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are thermal electric (TE) devices, such as Peltier devices. The TE devices can then be selectively controlled to remove or add heat, as necessary, to maintain the stacked IC device within a defined temperature range. The active temperature control elements can be P-N junctions created in the stacked IC device and can serve to move the heat laterally and/or vertically, as desired.

Abstract translation: 可以通过在堆叠的IC器件内构造一个或多个有源温度控制器件来提高层叠IC器件中的导热性。 在一个实施例中，控制装置是诸如珀耳帖装置之类的热电（TE）装置。 然后可根据需要选择性地控制TE器件去除或加热，以将堆叠的IC器件保持在规定的温度范围内。 活性温度控制元件可以是在堆叠的IC器件中产生的P-N结，并且可以根据需要用于横向和/或垂直地移动热量。

公开(公告)号：US20130105559A1

公开(公告)日：2013-05-02

申请号：US13713822

申请日：2012-12-13

Applicant: Qualcomm Incorporated

Inventor： Arvind Chandrasekaran ,  Shiqun Gu ,  Christine S. Hau-Riege

IPC: H01L23/00 ,  H01L21/768

CPC classification number: H01L24/81 ,  H01L21/76877 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1161 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump, Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.

Abstract translation: 微型接头中的电迁移会导致微胶囊中的空隙，从而降低了包含微型电池的集成电路的使用寿命。通过在焊料周围形成铜壳，电流寿命可能会增加。 一个微型块的铜壳接触第二个微型块的铜壳，以封闭微型接头的焊料。 铜壳允许通过微型块的更高的电流密度。 因此，可以以更小的间距制造较小的微胶片，而不会发生电迁移的故障。 此外，铜壳减少了衬底上的微型接头之间的短路或桥接。