-
公开(公告)号：US10403796B2
公开(公告)日：2019-09-03
申请号：US15520813
申请日：2015-10-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Ju Yong Park , Sung Su Son
Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.
-
公开(公告)号：US20190165037A1
公开(公告)日：2019-05-30
申请号：US16198792
申请日：2018-11-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Seong Gyu Jang , Ho Joon Lee , Chang Yeon Kim , Chung Hoon Lee
Abstract: A light emitting device including first, second, and third LED sub-units, and electrode pads disposed on the first LED sub-unit, electrically connected to the LED sub-units, and including a common electrode pad electrically connected to each of the LED sub-units, and first, second, and third electrode pads connected to a respective one of the LED sub-units, in which the common electrode pad, the second electrode pad, and the third electrode pad are electrically connected to the second LED sub-unit and the third LED sub-unit through holes that pass through the first LED sub-unit, the first, second, and third LED sub-units are configured to be independently driven, light generated in the first LED sub-unit emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is emitted to the outside through the third LED sub-unit.
-
公开(公告)号：US20180309029A1
公开(公告)日：2018-10-25
申请号：US15520813
申请日：2015-10-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Ju Yong Park , Sung Su Son
CPC classification number: H01L33/42 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.
-
公开(公告)号：US09362458B2
公开(公告)日：2016-06-07
申请号：US14474982
申请日：2014-09-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ju Yong Park , Jong Kyun You , Chang Yeon Kim
CPC classification number: H01L33/405 , H01L33/32 , H01L33/387 , H01L2933/0016
Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.
Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括：氮化镓系化合物半导体层; 包括Mg的第一金属层，并且以与氮化镓基化合物半导体层欧姆接触的岛的形式设置; 包含Ni的第二金属层，覆盖所述第一金属层，并且使所述氮化镓基化合物半导体层与所述第一金属层的岛之间接触; 以及覆盖第二金属层的反射金属层。
-
公开(公告)号：US09306120B2
公开(公告)日：2016-04-05
申请号：US14085092
申请日：2013-11-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Da Hye Kim , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0025
Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。
-
Patent Agency Ranking
公开(公告)号：US20150372208A1
公开(公告)日：2015-12-24
申请号：US14748149
申请日：2015-06-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Chang Yeon Kim , Sung Su Son , Dae Woong Suh
CPC classification number: H01L33/62 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/73104 , H01L2924/00014
Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.
Abstract translation: 本文公开了通过在晶片级分离生长衬底而制造的发光器件。 发光装置包括：基座; 发光结构，设置在所述基底上; 以及多个第二接触电极，其设置在所述基底和所述发光结构之间，其中所述基底包括电连接到所述发光结构的至少两个体电极和设置在所述体电极之间并包围所述体电极的绝缘支撑件，所述绝缘体 支撑体和各体积电极，每个包括彼此面对的表面彼此接合的凹部和凸部，并且凸部包括其突起方向上的宽度变化的部分。
-
公开(公告)号：US20150280070A1
公开(公告)日：2015-10-01
申请号：US14671955
申请日：2015-03-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Jae Hye Jung , Chang Yeon Kim
CPC classification number: H01L33/36 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/505 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2924/00014
Abstract: Embodiments provide a light emitting diode and a method of fabricating the same. The light emitting diode includes a base, a light emitting structure disposed on the base, at least one first electrode disposed on the light emitting structure; and a second electrode disposed under the light emitting structure, wherein at least a portion of the second electrode is covered by the base and the base includes a supporting insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting structure, and a surface of the at least one bulk electrode is exposed through the supporting insulator. The light emitting diode has excellent reliability and efficiency.
Abstract translation: 实施例提供一种发光二极管及其制造方法。 发光二极管包括基底，设置在基底上的发光结构，设置在发光结构上的至少一个第一电极; 以及设置在所述发光结构下方的第二电极，其中所述第二电极的至少一部分被所述基座覆盖，并且所述基座包括支撑绝缘体和至少一个体积电极，所述体电极嵌入所述支撑绝缘体中并电连接到所述发光 结构，并且所述至少一个体电极的表面通过所述支撑绝缘体暴露。 发光二极管具有优异的可靠性和效率。
-
公开(公告)号：US20140138729A1
公开(公告)日：2014-05-22
申请号：US14085092
申请日：2013-11-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Da Hye KIM , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0025
Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
Abstract translation: 根据本发明的示例性实施例的制造方法的发光二极管的方法包括在第一衬底上形成第一导电类型半导体层，有源层和第二导电类型半导体层，形成第二衬底 所述第二导电型半导体层将所述第一基板与所述第一导电型半导体层分离，在分离所述基板之后在所述第一导电型半导体层上形成包括多个开口的掩模图案，蚀刻所述第一导电型 具有设置在其上的掩模图案的半导体层，以形成彼此分离的多个凹槽，去除掩模图案，以及蚀刻第一导电型半导体层的表面以形成亚微观纹理。
-
公开(公告)号：US12021111B2
公开(公告)日：2024-06-25
申请号：US17518602
申请日：2021-11-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Seong Gyu Jang , Ho Joon Lee , Chang Yeon Kim , Chung Hoon Lee
IPC: H01L27/15 , H01L25/075 , H01L25/13 , H01L33/00 , H01L33/10 , H01L33/40 , H01L33/42 , H01L33/50 , H01L33/62 , H10K10/84 , H10K50/81 , H10K50/82 , H10K59/32 , H10K59/35 , H01L25/065 , H01L25/11 , H01L33/38 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828
CPC classification number: H01L27/156 , H01L25/0756 , H01L25/13 , H01L33/0093 , H01L33/10 , H01L33/405 , H01L33/42 , H01L33/507 , H01L33/62 , H01L25/0655 , H01L25/0753 , H01L25/115 , H01L33/38 , H01L33/382 , H10K10/84 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828 , H10K59/32 , H10K59/35
Abstract: A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.
-
公开(公告)号：US11935912B2
公开(公告)日：2024-03-19
申请号：US17847136
申请日：2022-06-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Seong Gyu Jang , Ho Joon Lee , Chang Yeon Kim , Chung Hoon Lee
IPC: H10K50/81 , H01L25/075 , H01L25/13 , H01L27/15 , H01L33/00 , H01L33/10 , H01L33/40 , H01L33/42 , H01L33/50 , H01L33/62 , H10K50/82 , H10K59/32 , H10K59/35 , H01L25/065 , H01L25/11 , H01L33/38 , H10K10/84 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828
CPC classification number: H01L27/156 , H01L25/0756 , H01L25/13 , H01L33/0093 , H01L33/10 , H01L33/405 , H01L33/42 , H01L33/507 , H01L33/62 , H01L25/0655 , H01L25/0753 , H01L25/115 , H01L33/38 , H01L33/382 , H10K10/84 , H10K50/813 , H10K50/818 , H10K50/822 , H10K50/828 , H10K59/32 , H10K59/35
Abstract: A display apparatus including a thin film transistor (TFT) substrate; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit; first, second, third, and fourth electrode pads disposed between the TFT substrate and the first LED sub-unit; and connectors connecting the first, second, and third LED sub-units to a respective one of the electrode pads, in which the first, second, and third sub-units are configured to be independently driven; light generated from the first LED sub-unit is emitted to the outside of the display apparatus by passing through the second and third LED sub-units; light generated from the second LED sub-unit is emitted to the outside of the display apparatus by passing through the third LED sub-unit; and at least one of the connectors includes a first portion electrically connecting a first surface of the first LED sub-unit to the second electrode pad.
-
-
-
-
-
-
-
-
-
Search Results
143
records
(took 0.023 seconds)
