SEMICONDUCTOR DEVICE
    102.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120132919A1

    公开(公告)日:2012-05-31

    申请号:US13366933

    申请日:2012-02-06

    IPC分类号: H01L29/786

    摘要: It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

    摘要翻译: 本发明的目的是提供一种具有新的多重结构的晶体管,其中提高了操作特性和可靠性。 在具有多重结构的晶体管中,其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层,并且在两者之间形成高浓度杂质区 渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
    103.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    其显示装置及其制造方法

    公开(公告)号:US20120064648A1

    公开(公告)日:2012-03-15

    申请号:US13280617

    申请日:2011-10-25

    IPC分类号: H01L33/36 H01L33/44

    摘要: It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. A display device of the present invention comprises a thin film transistor and a light-emitting element, the light-emitting element including a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film.

    摘要翻译: 本发明的目的是提供一种制造显示装置的方法,其中在发光元件下产生的不均匀性不会对发光元件产生不利影响。 本发明的另一个目的是提供一种制造显示装置的方法,其中可以在不大幅度增加处理步骤的情况下,通过具有高透湿性的膜将水渗透到显示装置的内部。 本发明的显示装置包括薄膜晶体管和发光元件,所述发光元件包括插在第一电极和第二电极之间的发光层叠体; 其中所述第一电极形成在形成在所述薄膜晶体管上的绝缘膜上; 并且其中响应于所述第一电极和所述绝缘膜之间的所述第一电极形成平坦化膜。

    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
    105.
    发明申请
    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
    存储器件和制造方法相同

    公开(公告)号:US20120273778A1

    公开(公告)日:2012-11-01

    申请号:US13546013

    申请日:2012-07-11

    IPC分类号: H01L29/12

    摘要: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

    摘要翻译: 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证,电子货币卡等的普及; 然而,提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件,本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层,并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    106.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20090256467A1

    公开(公告)日:2009-10-15

    申请号:US12244984

    申请日:2008-10-03

    IPC分类号: H01J1/62

    摘要: The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

    摘要翻译: 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括: 栅电极上的第二无机绝缘层,第二无机绝缘层上的第一有机绝缘层,第一有机绝缘层上的第三无机绝缘层,形成在第三无机绝缘层上的阳极层,第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层,有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层,以及与含有发光材料的有机化合物层接触形成的阴极层,其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    107.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130048978A1

    公开(公告)日:2013-02-28

    申请号:US13592942

    申请日:2012-08-23

    IPC分类号: H01L29/22

    摘要: Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

    摘要翻译: 提供了包括氧化物半导体并且具有稳定的电特性的半导体器件。 具体地,提供了包括氧化物半导体并且包括具有有利特性的栅极绝缘膜的半导体器件。 此外,提供了一种用于制造半导体器件的方法。 半导体器件包括栅电极,栅电极上的栅极绝缘膜,栅极绝缘膜上的氧化物半导体膜,以及与氧化物半导体膜接触的源电极和漏电极。 栅极绝缘膜至少包括形成在氧氮化硅膜上的氮氧化硅膜和氧释放型氧化物膜。 氧化物半导体膜与氧释放型氧化物膜形成并接触。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    110.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
    半导体器件和显示器件

    公开(公告)号:US20140139775A1

    公开(公告)日:2014-05-22

    申请号:US14077390

    申请日:2013-11-12

    IPC分类号: G02F1/1368 H01L27/12

    摘要: A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

    摘要翻译: 半导体器件包括:晶体管,包括栅极电极,栅极上的栅极绝缘膜,栅极绝缘膜上的半导体层,以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。