公开(公告)号：US20120248470A1

公开(公告)日：2012-10-04

申请号：US13486017

申请日：2012-06-01

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC分类号： H01L33/08

CPC分类号： H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20120032159A1

公开(公告)日：2012-02-09

申请号：US13277478

申请日：2011-10-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

IPC分类号： H01L51/52

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US20110180801A1

公开(公告)日：2011-07-28

申请号：US13082104

申请日：2011-04-07

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

IPC分类号： H01L51/52

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

公开(公告)号：US20110084264A1

公开(公告)日：2011-04-14

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Takashi SHIMAZU

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Takashi SHIMAZU

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20110043513A1

公开(公告)日：2011-02-24

申请号：US12915086

申请日：2010-10-29

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

IPC分类号： G09G5/00 ,  G09G3/20

CPC分类号： H01L27/1214 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  H01L27/3262 ,  H01L2251/5323

摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

公开(公告)号：US20100149851A1

公开(公告)日：2010-06-17

申请号：US12711333

申请日：2010-02-24

申请人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

发明人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

IPC分类号： G11C5/06 ,  G11C8/08

CPC分类号： H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

公开(公告)号：US20080099664A1

公开(公告)日：2008-05-01

申请号：US11928912

申请日：2007-10-30

申请人： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Yoshiaki OIKAWA ,  Atsushi HIROSE ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Yoshiaki OIKAWA ,  Atsushi HIROSE ,  Masayuki SAKAKURA

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1443 ,  H01L27/1214 ,  H01L27/1266 ,  H01L31/02005 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1055 ,  H01L31/1892 ,  H01M10/46 ,  H03F3/08 ,  Y02E10/50

摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

摘要翻译： 一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。 第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。 此外，放大器电路是包括薄膜晶体管的电流镜电路。 此外，可以使用彩色胶片代替滤色器。

公开(公告)号：US20110210325A1

公开(公告)日：2011-09-01

申请号：US12871148

申请日：2010-08-30

申请人： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

发明人： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

摘要翻译： 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

公开(公告)号：US20110062436A1

公开(公告)日：2011-03-17

申请号：US12880343

申请日：2010-09-13

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20110049510A1

公开(公告)日：2011-03-03

申请号：US12861190

申请日：2010-08-23

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

摘要翻译： 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。