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    Assisted rinsing in a single wafer cleaning process
    101.
    发明授权
    Assisted rinsing in a single wafer cleaning process 失效

    公开(公告)号：US07021319B2

    公开(公告)日：2006-04-04

    申请号：US09892130

    申请日：2001-06-25

    Applicant: Steven Verhaverbeke ,  J. Kelly Truman

    Inventor： Steven Verhaverbeke ,  J. Kelly Truman

    IPC: B08B7/04 ,  B08B7/02

    CPC classification number: H01L21/67051 ,  B08B3/02 ,  Y10S134/902

    Abstract: The present invention is a method of assisting the rinsing of a wafer in a single wafer cleaning apparatus. According to the present invention, after exposing a wafer to a cleaning and/or etching solution, the cleaning or etching solution is removed from the wafer by spinning the wafer and dispensing or spraying DI water onto the wafer as it is spun. The centrifugal force of the spinning wafer enhances the rinsing of the wafer. In order to enhance the rinsing of the wafer, in an embodiment of the present invention a solution having a lower surface tension than water, such as but not limited to isopropyl alcohol (IPA) is dispensed in liquid or vapor form onto the wafer after the DI water.In a specific embodiment of the present invention, the vapor of a solution with a lower surface tension than DI water, such as IPA vapor, is blown on the wafer in order to break up the DI water bulging up at the center of the spinning wafer.In another embodiment of the present invention, a gas such N2, is blown for a short period of time onto the center of the wafer to break up the DI water bulging up at the center of the spinning wafer. In yet another embodiment of the present invention, acoustic or sonic waves are applied to the wafer as it spins in order to help diffuse the DI water from the wafer. And in still yet another embodiment of the present invention, the DI water which is dispensed onto the spinning wafer is heated to a temperature above room temperature and preferably between 60-70° C. to enhance the diffusion of water from the wafer. The low surface tension liquid, acoustic application, gas blowing, and heated DI water can be used alone or in combination with one another into enhance the rinsing of a wafer and thereby decrease the rinsing time of a single wafer process to less than 20 seconds.

    Cleaning method and solution for cleaning a wafer in a single wafer process
    102.
    发明申请
    Cleaning method and solution for cleaning a wafer in a single wafer process 有权
    用于在单个晶片工艺中清洁晶片的清洁方法和解决方案

    公开(公告)号：US20060054181A1

    公开(公告)日：2006-03-16

    申请号：US11146574

    申请日：2005-06-06

    Applicant: Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

    Inventor： Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

    IPC: B08B3/12 ,  C23G1/00 ,  B08B3/00

    CPC classification number: H01L21/67051 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02052

    Abstract: The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.

    Abstract translation: 本发明是在单晶片清洗工艺中使用新型清洗溶液的方法。 根据本发明，该方法包括以单晶片模式使用清洁溶液，并且清洁溶液至少包含氢氧化铵（NH 4 OH），过氧化氢（H 2 N 2 O） > O 2），水（H 2 O 2 O）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 此外，本发明还教导了一种将氨基氢氧化物，过氧化氢和螯合剂步骤与短HF步骤组合的方法，其方法是使整个方法有效地除去铝和铁污染物，而不会蚀刻，从而最小化处理时间 很多氧化物。 单晶片清洗工艺也可以用来提高高品质再生晶片的产量。

    System for batch processing of magnetic media
    107.
    发明授权
    System for batch processing of magnetic media 有权
    磁性介质批量处理系统

    公开(公告)号：US08911554B2

    公开(公告)日：2014-12-16

    申请号：US12984528

    申请日：2011-01-04

    Applicant: Steven Verhaverbeke ,  Jose Antonio Marin

    Inventor： Steven Verhaverbeke ,  Jose Antonio Marin

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/673 ,  H01L21/677 ,  G11B5/84 ,  C23C14/48 ,  C23C14/50 ,  H01L21/687

    CPC classification number: G11B5/8404 ,  C23C14/48 ,  C23C14/50 ,  H01L21/67721 ,  H01L21/67736 ,  H01L21/67766 ,  H01L21/67781 ,  H01L21/68771

    Abstract: A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier.

    Abstract translation: 提供了一种用于同时处理多个基板的方法和装置。 每个基底可以具有待处理的两个主要活性表面。 该装置具有基板处理模块和基板处理模块。 基板处理模块具有加载器组件，导板组件和工厂接口。 衬底在装载机组件上设置在衬底载体上。 在需要双面处理的情况下，导板组件用于翻转衬底载体上的所有衬底。 工厂接口定位用于保持进入和离开基板处理模块的基板的基板载体。 衬底处理模块包括负载锁定，传送室和多个处理室，每个处理室被配置为处理设置在衬底载体上的多个衬底。

    Methods for substrate surface planarization during magnetic patterning by plasma immersion ion implantation
    108.
    发明授权
    Methods for substrate surface planarization during magnetic patterning by plasma immersion ion implantation 有权
    通过等离子体浸没离子注入在磁图形化过程中的衬底表面平面化方法

    公开(公告)号：US08673162B2

    公开(公告)日：2014-03-18

    申请号：US12965318

    申请日：2010-12-10

    Applicant: Roman Gouk ,  Steven Verhaverbeke ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene

    Inventor： Roman Gouk ,  Steven Verhaverbeke ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene

    IPC: B44C1/22 ,  H01L21/00 ,  B32B9/00

    CPC classification number: G11B5/855 ,  G11B5/8404 ,  G11B5/851

    Abstract: A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional.

    Abstract translation: 提供了一种用于平坦化磁敏感层的基板的方法和装置。 在磁敏层上形成图案化的抗蚀剂，并且对基片进行等离子体浸没离子注入工艺，以根据抗蚀剂材料的图案改变磁敏层的磁特性。 在注入工艺之前或之后对衬底进行等离子体材料去除处理，以平坦化由植入工艺产生的易磁化层的表面。 等离子体材料去除过程可以是有向的或非定向的。

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