公开(公告)号：US20110265814A1

公开(公告)日：2011-11-03

申请号：US12915240

申请日：2010-10-29

Applicant: JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

Inventor： JAMES P. CRUSE ,  DERMOT CANTWELL ,  MING XU ,  CHARLES HARDY ,  BENJAMIN SCHWARZ ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  ZHIFENG SUI ,  EVANS LEE

IPC: B08B6/00

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括使处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

公开(公告)号：US08018164B2

公开(公告)日：2011-09-13

申请号：US12129155

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: H01J7/24

CPC classification number: H05H1/36 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32935 ,  H05H1/46

Abstract: Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.

Abstract translation: 诸如负载阻抗的等离子体特性的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。

公开(公告)号：US07972469B2

公开(公告)日：2011-07-05

申请号：US11738505

申请日：2007-04-22

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger A. Lindley ,  Hong S. Yang

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger A. Lindley ,  Hong S. Yang

IPC: H01L21/00

CPC classification number: H01J37/3266 ,  H01J37/32623

Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

Abstract translation: 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

公开(公告)号：US07968469B2

公开(公告)日：2011-06-28

申请号：US11733984

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率在第一VHF频率f1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极和 工件支撑电极为频率f1。 该方法还包括提供可变高度边缘的地面环形元件，并为频率f1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20110151590A1

公开(公告)日：2011-06-23

申请号：US12846664

申请日：2010-07-29

Applicant: James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

Inventor： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

IPC: H01L21/00 ,  C23C16/50 ,  H01L21/465

CPC classification number: H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

Abstract: A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

Abstract translation: 一种用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的真正真正修复的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 紫外线辐射可以在低k修复处理之前，之后或期间以任何组合提供在集成蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。

公开(公告)号：US07884025B2

公开(公告)日：2011-02-08

申请号：US11733767

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Abstract translation: 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

公开(公告)号：US07879731B2

公开(公告)日：2011-02-01

申请号：US11733764

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

Abstract translation: 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将相应的VHF频率f1和f2的相应RF功率源耦合到（a）电极中的相应电极或（b）共同的一个电极，其中f1足够高以产生中心高的不均匀 等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 该方法还包括调整f1频率处的RF参数与f2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

公开(公告)号：US07777599B2

公开(公告)日：2010-08-17

申请号：US11934197

申请日：2007-11-02

Applicant: Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

Inventor： Steven C. Shannon ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Olga Regelman ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Kallol Bera

IPC: H01P7/06 ,  H05B31/26

CPC classification number: H05H1/0081 ,  H01J37/32091 ,  H01J37/32174

Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.

Abstract translation: 本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。 在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

公开(公告)号：US20100160143A1

公开(公告)日：2010-06-24

申请号：US12660068

申请日：2010-02-19

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: C04B35/482 ,  H01L21/306

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract translation: 用于半导体加工的固体溶液陶瓷制品，其耐受含卤素等离子体侵蚀。 含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。 在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆， 。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US07695590B2

公开(公告)日：2010-04-13

申请号：US10873463

申请日：2004-06-22

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: C23F1/00 ,  H01L21/306 ,  C23C16/505 ,  C23C16/48 ,  C23F1/12 ,  H01L21/3065 ,  C23C16/06

CPC classification number: H01J37/32449 ,  C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

Abstract: A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.

Abstract translation: 一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 工艺区域中的工件支撑面向最下面的离子淋浴网格。 反应物种源向离子产生区域提供化学气相沉积前体物质。 反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。 通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降 离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。