公开(公告)号：US20030011515A1

公开(公告)日：2003-01-16

申请号：US09905115

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Keith V. Warble ,  John Wesley Locke

IPC: H01Q003/22

CPC classification number: H01L21/8258 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L27/0605 ,  H01Q3/36 ,  H01Q21/0093 ,  H01Q25/00

Abstract: An apparatus for effecting transfer of electromagnetic signals intermediate a host device and a medium adjacent to the antenna includes: (a) a plurality of antenna elements arranged in an array in facing relation with a target sector; (b) a phase adjusting unit coupled with selected antenna elements and with the host unit for transferring internal signals intermediate the host device and the antenna elements; and (c) a control unit coupled with the phase adjusting unit. The phase adjusting unit cooperates with the control unit to adjust at least one parameter relating to the electromagnetic signals intermediate the host device and the antenna elements. The adjusting is carried out to cause the antenna elements to address the sector in a timed space-sharing pattern. At least two of the plurality of antenna array, the phase adjusting unit and the control unit are implemented in a unitary structure borne upon a single silicon substrate.

Abstract translation: 用于实现主机设备和与天线相邻的介质之间的电磁信号的传送的装置包括：（a）多个天线元件，其排列成与目标扇区面对关系; （b）与所选择的天线元件和主机单元耦合的相位调整单元，用于传送主机设备和天线元件之间的内部信号; 和（c）与所述相位调整单元耦合的控制单元。 相位调整单元与控制单元协调以调整与主机设备和天线元件之间的电磁信号有关的至少一个参数。 执行调整以使得天线元件以定时的空间共享模式寻址扇区。 多个天线阵列，相位调整单元和控制单元中的至少两个以承载在单个硅衬底上的整体结构实现。

公开(公告)号：US20030010998A1

公开(公告)日：2003-01-16

申请号：US09900882

申请日：2001-07-10

Applicant: MOTOROLA, INC.

Inventor： Edgar H. Callaway JR.

IPC: H01L031/0328

CPC classification number: H01L27/0605 ,  H01L21/8258

Abstract: Apparatus and techniques for implementing wireless communication between integrated transmitters and integrated receivers are provided. By providing a semiconductor structure including silicon and a compound semiconductor, a single circuit can be integrated part in silicon and part in compound semiconductor. In a semiconductor structure according to the invention, a wireless transmitter and a wireless receiver can be integrated in a compound semiconductor portion of the structure and digital CMOS circuitry can be integrated in the silicon portion of the structure. This obtains substantially increased wireless transmission efficiency. The circuits according to the invention can be implemented with circuits that wirelessly transmit from one portion of the chip to another portion of the chip, or with circuits that wirelessly transmit from one integrated circuit to a second integrated circuit.

Abstract translation: 提供了用于实现集成发射机和集成接收机之间的无线通信的装置和技术。 通过提供包括硅和化合物半导体的半导体结构，单个电路可以集成在硅中并且部分在化合物半导体中。 在根据本发明的半导体结构中，无线发射器和无线接收器可以集成在该结构的复合半导体部分中，并且数字CMOS电路可以集成在该结构的硅部分中。 这获得了显着提高的无线传输效率。 根据本发明的电路可以用从芯片的一部分无线地从芯片的另一部分或与从一个集成电路无线地传输到第二集成电路的电路的电路来实现。

公开(公告)号：US20030010992A1

公开(公告)日：2003-01-16

申请号：US09904841

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Daniel Gamota

IPC: H01L027/15

CPC classification number: H01S5/026 ,  H01L27/15 ,  H01S5/021

Abstract: A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Abstract translation: 用于提供交叉点开关功能的半导体结构包括单晶硅衬底和覆盖单晶硅衬底的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料。 单晶化合物半导体材料包括可用于产生辐射能传输的光源组件。 衍射光栅与光源部件光学耦合，并且具有用于以预定的辐射能量强度图案传递辐射能量传输的结构，形成辐射能传输的多个重复。 半导体结构还包括光学耦合到衍射光栅的至少一个光学开关部件，其中每个光学开关部件对应于复制的辐射能量传输中的至少一个，并且具有用于使至少一个复制的辐射能量传输 以及禁止所述至少一个复制的辐射能量传输的通过的第二状态。

公开(公告)号：US20030010984A1

公开(公告)日：2003-01-16

申请号：US09901905

申请日：2001-07-11

Applicant: Motorola, Inc.

Inventor： Bruce Allen Bosco ,  Rudy M. Emrick ,  Stephen Kent Rockwell

IPC: H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC classification number: H01L27/0605 ,  H01L21/8258 ,  H01L27/0688 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/183 ,  H01S5/327 ,  H01S5/4006 ,  H01S2301/176

Abstract: An integrated light source for frequency adjustment, injection locking or modulation of an oscillator is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of an active device and a light source on a monocrystalline compound semiconductor material and control circuitry for the light source on a monocrystalline substrate. The use of light to provide the frequency adjustment, injection locking or modulation of the oscillator has multiple advantages including maintenance of good phase-noise.

Abstract translation: 公开了用于频率调节，注入锁定或振荡器调制的集成光源。 在单晶衬底上生长的单晶材料的高质量外延层使得能够在单晶化合物半导体材料上形成有源器件和光源，并在单晶衬底上形成用于光源的控制电路。 使用光提供频率调节，注入锁定或调制振荡器有多个优点，包括保持良好的相位噪声。

公开(公告)号：US20030006417A1

公开(公告)日：2003-01-09

申请号：US09897059

申请日：2001-07-03

Applicant: MOTOROLA, INC.

Inventor： Tomasz L. Klosowiak ,  Daniel R. Gamota ,  Robert B. Lempkowski

IPC: H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC classification number: G02B26/0858 ,  H01L41/319

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures having optical surfaces may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 此外，具有光学表面的各种成形的压电结构可以设置在上覆的单晶层上，用于光信号的光学切换和受控操纵。

公开(公告)号：US20030005782A1

公开(公告)日：2003-01-09

申请号：US09901366

申请日：2001-07-09

Applicant: Motorola, Inc.

Inventor： William G. McDonald ,  David J. Monk ,  James E. Hannibal JR. ,  Slobodan Petrovic

IPC: G01L007/00 ,  G01D007/02

CPC classification number: G01L19/0636 ,  G01D11/245 ,  G01L19/141 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73265 ,  Y10T29/49007 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A component includes a housing (110, 1110) at least partially defining a cavity (125, 1125), a sensor element (105) located in the cavity, and a support member (340, 1140) located over the cavity, located over at least a portion of the housing, and having a hole (341, 1141) over the cavity. The component also includes a filter (345, 700, 800, 1045) located over the support member and located over the hole in the support member.

Abstract translation: 组件包括至少部分地限定空腔（125,1125），位于空腔中的传感器元件（105）和位于空腔上方的位于空腔上方的支撑构件（340,1140）的壳体（110,1110） 壳体的至少一部分，并且在空腔上方具有孔（341,1141）。 该部件还包括位于支撑构件上并位于支撑构件上的孔上方的过滤器（345,700,800,10505）。

公开(公告)号：US20030002449A1

公开(公告)日：2003-01-02

申请号：US09896997

申请日：2001-07-02

Applicant: MOTOROLA, INC

Inventor： Loren J Rittle ,  Timothy J. Spets ,  Guy G. Romano ,  Kenneth T. Crisler

IPC: H04B007/00 ,  H04Q007/00 ,  H04L012/413

CPC classification number: H04L1/1671 ,  H04L29/06 ,  H04L69/22 ,  H04L69/324 ,  H04W76/30

Abstract: Frame collisions on communication channels connecting half-duplex units and a full-duplex unit are avoided using MAC and LLC layer protocols adapted to arbitrate channel usage. One or more flags can be included in MAC and LLC packet headers and/or acknowledgements to indicate whether subsequent packet transmissions will be attempted by sending units. Units receiving set flags can hold off transmission until receiving cleared flags from the sending units. In this manner, packet collisions can be avoided.

Abstract translation: 使用适用于仲裁通道使用的MAC和LLC层协议避免了连接半双工单元和全双工单元的通信通道上的帧冲突。 可以在MAC和LLC分组头部和/或确认中包括一个或多个标志，以指示是否将通过发送单元尝试后续分组传输。 接收设置标志的单元可以阻止发送，直到从发送单元接收到清除的标志。 以这种方式，可以避免分组冲突。

公开(公告)号：US20020197996A1

公开(公告)日：2002-12-26

申请号：US09891645

申请日：2001-06-26

Applicant: MOTOROLA, INC.

Inventor： George Popovich

IPC: H04Q007/20

CPC classification number: H04L47/824 ,  H04L12/185 ,  H04L47/14 ,  H04L47/15 ,  H04L47/70 ,  H04L47/724 ,  H04L47/806 ,  H04L47/822

Abstract: Call control methods are disclosed for a multi-zone, packet-based communication system using certain host devices, termed reservation proxy elements, or RPEs to establish reservations of bandwidth for calls on behalf of other participating hosts. RPEs (132-138) receive and join a multicast group address to be used for a call, and exchange RSVP signaling messages across one or more inter-zone, packet network links (148, 150, 152, 154) to reserve communication resources for the call on behalf of participating devices in various zones. The RPEs receive the multicast group address from zone controller(s) (124-130) having received a call request for a talkgroup call. The zone controllers identify the multicast group address for the call and determine locations of participating devices and RPEs for the call. Upon the RPEs reserving communication resources for the call and communicating the reservation to the zone controller(s), the zone controller(s) grant the call and participating devices join the multicast group to participate in the call. The multicast group address used for the RSVP reservation is the same address used for the actual call.

Abstract translation: 对于使用某些主机设备（称为预留代理元件）或RPE的多区域，基于分组的通信系统公开呼叫控制方法，以代表其他参与主机来建立用于呼叫的带宽预留。 RPE（132-138）接收并加入要用于呼叫的组播组地址，并且通过一个或多个区间分组网络链路（148,150,152,154）交换RSVP信令消息，以保留用于 代表各个区域的参与设备的呼叫。 RPE接收到已经接收到对话组呼叫的呼叫请求的区域控制器（124-130）中的多播组地址。 区域控制器识别呼叫的组播组地址，并确定呼叫的参与设备和RPE的位置。 在RPE保留呼叫的通信资源并将预约传送给区域控制器的情况下，区域控制器授权呼叫和参与设备加入组播组以参与呼叫。 用于RSVP预留的组播组地址与实际呼叫相同的地址。

公开(公告)号：US20020195057A1

公开(公告)日：2002-12-26

申请号：US09884981

申请日：2001-06-21

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Scott T. Massie

IPC: C23C016/00 ,  C23F001/00 ,  C30B025/00

CPC classification number: C30B23/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

Abstract: An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber and a plurality of first material sources positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer on a substrate. The plurality of first material sources includes an oxygen source. At least one second material source is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism configured to adjust the partial pressure of oxygen in the chamber.

Abstract translation: 提供一种用于形成半导体结构的装置。 该装置包括腔室和至少部分地定位在腔室内的多个第一材料源。 多个第一材料源被配置为提供用于在衬底上形成单晶容纳缓冲层的材料。 多个第一材料源包括氧源。 至少一个第二材料源还至少部分地定位在室内，并且被配置为提供用于形成覆盖单晶容纳缓冲层的单晶氧掺杂材料层的材料。 该装置还包括配置成调节室中的氧分压的氧气调节机构。

公开(公告)号：US20020190232A1

公开(公告)日：2002-12-19

申请号：US09882067

申请日：2001-06-18

Applicant: MOTOROLA, INC.

Inventor： Marc Kenneth Chason

IPC: G01N021/85

CPC classification number: G08B17/103 ,  G01N21/53 ,  G01N21/8422 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。