公开(公告)号：US20120183725A1

公开(公告)日：2012-07-19

申请号：US13432322

申请日：2012-03-28

Applicant: Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

Inventor： Yasushi NOGUCHI ,  Atsushi KANEDA ,  Takayuki INOUE

IPC: B32B3/12

CPC classification number: F01N3/28 ,  B01D46/2425 ,  B01D46/2451 ,  B01D46/247 ,  B01D46/2474 ,  B01D53/88 ,  B01D2046/2433 ,  B01D2046/2437 ,  B01D2258/01 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0009 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C04B2111/0081 ,  C04B2235/3213 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/663 ,  C04B2235/96 ,  F01N3/0222 ,  Y02T10/20 ,  Y10T428/24149 ,  Y10T428/24165 ,  C04B38/0067 ,  C04B41/5059 ,  C04B38/0006 ,  C04B35/573

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.

Abstract translation: 公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。 分隔壁和外周壁包含碳化硅颗粒作为骨料，硅作为粘合剂以结合碳化硅颗粒，分隔壁的厚度为50-200μm，孔密度为50-150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

公开(公告)号：US20120135302A1

公开(公告)日：2012-05-31

申请号：US13301020

申请日：2011-11-21

Applicant: Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

Inventor： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

IPC: H01M4/13 ,  H01L21/28 ,  H01M4/02 ,  H01L29/02

CPC classification number: H01L29/12 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386

Abstract: Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.

Abstract translation: 提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。 此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。 使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。 控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。 这样的半导体膜可以应用于蓄电装置的电极。

公开(公告)号：US20120120742A1

公开(公告)日：2012-05-17

申请号：US13359534

申请日：2012-01-27

Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA

Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA

IPC: G11C7/10 ,  G11C7/00

CPC classification number: G11C5/141 ,  G11C5/142 ,  G11C29/70

Abstract: An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.

Abstract translation: 目的是提供一种具有存储器的半导体器件，其可以通过采用有利于使用备用存储单元的结构来有效地提高产量。 半导体器件包括具有存储单元和备用存储单元的存储单元阵列，连接到存储单元和备用存储单元的解码器，连接到解码器的数据保持电路以及向数据提供电力的电池 保持电路。 备用存储单元根据数据保持电路的输出进行工作。

公开(公告)号：US20120100309A1

公开(公告)日：2012-04-26

申请号：US13273258

申请日：2011-10-14

Applicant: Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

Inventor： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

IPC: C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45574

Abstract: A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.

Abstract translation: 等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。 第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。 第二气体扩散室与上部电极中的第一气体管连接。 上电极和室壁设置在同一轴线上。 分散板包括没有气孔的中心部分和具有多个气孔的周边部分。 中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

公开(公告)号：US20120068224A1

公开(公告)日：2012-03-22

申请号：US13267370

申请日：2011-10-06

Applicant: Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

Inventor： Naohiro NISHIKAWA ,  Tsuyoshi NAKANO ,  Takayuki INOUE

IPC: H01L29/36 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L21/02395 ,  H01L21/0237 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/20 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/8605

Abstract: A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or a compound containing a first impurity atom as a constituent, thereby producing semiconductor wafers, includes, after introducing the first-impurity gas: taking out a produced semiconductor wafer; disposing a first semiconductor in the reaction chamber; introducing, into the reaction chamber, a second-impurity gas containing an element or a compound containing, as a constituent, a second impurity atom exhibiting a conduction type opposite to the conduction type of the first impurity atom within the first semiconductor; heating the first semiconductor in an atmosphere of the second-impurity gas; and forming a second semiconductor on the heated first semiconductor by crystal growth.

Abstract translation: 提供了在单个半导体晶片上制造适合于形成诸如HBT和FET之类的器件的半导体晶片的方法。 该方法通过重复步骤，包括通过晶体生长将用于形成半导体的反应室引入包含元素或含有第一杂质原子的化合物作为组分的第一杂质气体，从而制备半导体晶片，其中引入 第一杂质气体：取出生产的半导体晶片; 在反应室中设置第一半导体; 向所述反应室中引入包含元素或化合物的第二杂质气体，所述元素或化合物含有与所述第一半导体内的所述第一杂质原子的导电类型相反的导电类型的第二杂质原子作为组分; 在第二杂质气体的气氛中加热第一半导体; 以及通过晶体生长在加热的第一半导体上形成第二半导体。

公开(公告)号：US08106942B2

公开(公告)日：2012-01-31

申请号：US11477800

申请日：2006-06-30

Applicant: Jeremy Cooke ,  Takayuki Inoue

Inventor： Jeremy Cooke ,  Takayuki Inoue

IPC: H04N7/18 ,  G06F15/00

CPC classification number: G02B21/367

Abstract: An image acquiring apparatus is made up of a macro image acquiring unit 20 used to acquire a macro image of each of a plurality of samples S, and a control unit 60 including a macro image acquisition control unit used to control a macro image acquiring operation and an image pickup condition setting unit used to set an image pickup condition for a micro image of the sample S with reference to the macro image. The control unit 60 includes a session managing unit used to define a session in accordance with a sample group consisting of the samples S and to manage a data group including data of the macro image and the image pickup condition as session data associated with the sample group for each session. According to this structure, it is possible to realize an image acquiring apparatus, an image acquiring method, and an image acquiring program capable of suitably managing image acquisition processing performed to acquire an image of each of a plurality of samples.

Abstract translation: 图像获取装置由用于获取多个样本S中的每一个的宏图像的宏图像获取单元20和包括用于控制宏图像获取操作的宏图像获取控制单元的控制单元60构成， 图像拾取条件设置单元，用于参考宏图像设置样本S的微图像的图像拾取条件。 控制单元60包括会话管理单元，用于根据由样本S组成的样本组来定义会话，并且将包括宏图像和图像拾取条件的数据组作为与样本组相关联的会话数据进行管理 为每个会话。 根据该结构，可以实现能够适当地管理执行的图像获取装置，图像获取方法和图像获取程序，以获取多个样本中的每一个的图像。

公开(公告)号：US20110211711A1

公开(公告)日：2011-09-01

申请号：US12932473

申请日：2011-02-25

Applicant: Takayuki Inoue ,  Yu Takahashi ,  Hiroshi Saruwatari ,  Kazunobu Kondo

Inventor： Takayuki Inoue ,  Yu Takahashi ,  Hiroshi Saruwatari ,  Kazunobu Kondo

IPC: H04B15/00

CPC classification number: G10L21/02 ,  H04R2227/001

Abstract: In a noise suppression apparatus, an index setter sets an exponent K that is a positive value. A factor setter variably sets a suppression factor according to the exponent K. A noise suppressor generates an audio signal from which a noise component is suppressed through noise suppression process of suppressing a Kth power of an amplitude of the noise component at each frequency thereof in a Kth power of an amplitude of the audio signal at each frequency thereof to a degree determined according to the suppression factor set by the factor setting part. Preferably, the index setter sets the exponent K to a value less than 0.1.

Abstract translation: 在噪声抑制装置中，索引设定器设定作为正值的指数K。 因子设定器根据指数K可变地设定抑制因子。噪声抑制器通过噪声抑制处理生成音频信号，通过噪声抑制处理抑制噪声分量在其频率中的噪声分量的振幅的第K次方 音频信号在其每个频率处的幅度的Kth功率达到由因子设置部分设置的抑制因子确定的程度。 优选地，索引设置器将指数K设置为小于0.1的值。

公开(公告)号：US07986216B2

公开(公告)日：2011-07-26

申请号：US11812618

申请日：2007-06-20

Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

IPC: H04Q5/22

CPC classification number: G06K19/07749

Abstract: In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

Abstract translation: 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US07879844B2

公开(公告)日：2011-02-01

申请号：US12065234

申请日：2006-12-25

Applicant: Takayuki Inoue ,  Akira Tanaka ,  Kazuo Nakai ,  Hiroshi Sasaki ,  Fumie Takahashi ,  Shohei Shirakami ,  Keiko Hatanaka ,  Yutaka Nakajima ,  Koichiro Mukoyoshi ,  Hisao Hamaguchi ,  Shigeki Kunikawa ,  Yasuyuki Higashi

Inventor： Takayuki Inoue ,  Akira Tanaka ,  Kazuo Nakai ,  Hiroshi Sasaki ,  Fumie Takahashi ,  Shohei Shirakami ,  Keiko Hatanaka ,  Yutaka Nakajima ,  Koichiro Mukoyoshi ,  Hisao Hamaguchi ,  Shigeki Kunikawa ,  Yasuyuki Higashi

IPC: A61K31/437 ,  A61K31/496 ,  A61K31/5377 ,  A61K31/541 ,  C07D471/04 ,  C07D471/14 ,  A61P37/00 ,  A61P25/28 ,  A61P35/00

CPC classification number: C07D451/04 ,  C07D471/04 ,  C07D471/14 ,  C07D519/00

Abstract: The present invention provides a compound of formula (I) having an excellent JAK3 inhibition activity and being useful as an active ingredient of an agent for treating and/or preventing various immune diseases including autoimmune diseases inflammatory diseases, and allergic diseases. The compound according to the present invention has an inhibition activity against JAK3 and is thus useful as an active ingredient of an agent for treating or preventing diseases caused by undesirable cytokine signal transmission (e.g., rejection during organ/tissue transplantation, autoimmune diseases, multiple sclerosis, rheumatoid arthritis, psoriasis, asthma, atopic dermatitis, Alzheimer's disease, and atherosclerotic disease), or diseases caused by abnormal cytokine signal transmission (e.g., cancer and leukemia).

Abstract translation: 本发明提供了具有优异的JAK3抑制活性的式（I）化合物，并且可用作治疗和/或预防各种免疫疾病，包括自身免疫性疾病炎性疾病和过敏性疾病的药剂的活性成分。 根据本发明的化合物对JAK3具有抑制活性，因此可用作治疗或预防由不良细胞因子信号传导引起的疾病（例如器官/组织移植期间的排斥，自身免疫性疾病，多发性硬化症）的活性成分 ，类风湿性关节炎，牛皮癣，哮喘，特应性皮炎，阿尔茨海默病和动脉粥样硬化疾病）或由异常细胞因子信号传导引起的疾病（例如癌症和白血病）。

公开(公告)号：US20100309306A1

公开(公告)日：2010-12-09

申请号：US12857110

申请日：2010-08-16

Applicant: Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

Inventor： Shigeru UCHIYAMA ,  Takayuki INOUE ,  Masatoshi OKUGAWA ,  Jeremy COOKE

IPC: H04N7/18

CPC classification number: G02B21/367

Abstract: In acquisition of a micro image of a sample S by a micro image acquiring unit 30, when a plurality of image acquiring ranges are set for the sample S as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample S by the micro image acquiring unit 30 include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample S, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample S.

Abstract translation: 在通过微图像获取单元30获取样本S的微图像时，当为作为图像获取对象的样本S设置多个图像采集范围时，设置多个相应的焦点信息，此外， 当通过微图像获取单元30扫描样本S获取的多个部分图像包括包括多个图像获取范围的混合的部分图像时，在部分图像的扫描中间切换焦点信息。 通过这样的结构，即使在样本S中包含多个物体，也可以优选获得各个物体的图像。 因此，即使当多个对象被包含在样本S中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。