摘要:
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS1 made of silicon nitride or silicon oxynitride and a second nitride film CS2 made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS1. The first nitride film CS1 is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS2 is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.
摘要:
A silver halide color photographic light-sensitive material, in which a non-light-sensitive hydrophilic colloidal layer, on a transmission-type support, contains a solid fine-particle dispersion of a dye represented by formula (I), any one of photographic constituting layers contains a compound represented by formula (A) and/or a compound represented by formula (B) or (FS-2), and the light-sensitive material does not contain any compound represented by formula (C): in formulas (I), (A), (B) and (C), D represents a group to give a compound having a chromophore; X represents a dissociable hydrogen or a group having a dissociable hydrogen; y is an integer from 1 to 7; R1 represents a substituted or unsubstituted alkyl or alkoxy group; R2 and R3 each independently represent a substituted or unsubstituted alkyl group; R4 represents a substituted or unsubstituted alkyl group; M, M1, M2 and M3 each independently represent a cation; n represents an integer of 1 to 7; A and B each independently represent a fluorine atom or a hydrogen atom; a and b each independently represent an integer of from 1 to 6; and c and d each independently represent an integer of from 4 to 8.
摘要翻译:透明型载体上的非感光亲水性胶体层的卤化银彩色照相感光材料含有由式(I)表示的染料的固体细颗粒分散液,任何一种照相 构成层含有式(A)表示的化合物和/或式(B)或(FS-2)表示的化合物,感光材料不含有式(C)表示的化合物:式 I),(A),(B)和(C)中,D表示具有发色团的化合物的基团; X表示可离解氢或具有可离解氢的基团; y为1〜7的整数; R 1表示取代或未取代的烷基或烷氧基; R 2和R 3各自独立地表示取代或未取代的烷基; R 4表示取代或未取代的烷基; M,M 1,M 2和M 3各自独立地表示阳离子; n表示1〜7的整数, A和B各自独立地表示氟原子或氢原子; a和b各自独立地表示1〜6的整数, c和d各自独立地表示4〜8的整数。
摘要:
Provided are a novel halogenoacetoxyadamantane derivative which is useful as a modifying agent for a resin for a photoresist and a dry etching resistance-improving agent in the photolithography field, agricultural and medical intermediates and a compound for other various industrial products and a process for producing the same. To be specific, provided are a halogenoacetoxyadamantane derivative having a halogenoacetoxy group in an adamantane skeleton and a process for producing a halogenoacetoxyadamantane derivative, comprising the step of reacting a hydroxyl group of an adamantane skeleton with halogenoacetic halide or reacting the above hydroxyl group with a lithiation agent to derive it into a lithiumoxy group and then reacting halogenoacetic halide to introduce a halogenoacetoxy group.
摘要:
An end face of an intermediate layer of a multilayer structure is stably covered by surface resin layers at a time of cutting the multilayer structure. A cutting method of the multilayer structure 10 includes the steps of: compressing and deforming the multilayer structure, while extending respective layers 11, 12, 13 of the multilayer structure to provide a thin thickness portion, so that an upper layer bites into a lower layer by pushing a push cutter 15, by a predetermined amount, into the multilayer structure supported by a cutter receiving portion 14, in a fused state of at least one of the resin layers forming the multilayer structure; and push-cutting the compressed thin thickness portion S till the push cutter abuts against the cutter receiving portion so as to converge an intermediate layer 11 and surface resin layers 12, 13 of the multilayer structure to the abutting portion A of the push cutter 15 and the cutter receiving portion 14.
摘要:
The invention provides an antistatic film having a support and a conductive layer formed on at least one side of the support, wherein the conductive layer comprises: a reaction product of: a resin containing a plurality of carboxylic acid groups in the molecule and having a weight-average molecular weight of 2,000 or more with a compound having a plurality of carbodiimide structures in the molecule; and a conductive material which exhibits conductivity by electronic conduction. The invention further provides a method of producing the antistatic film and a recording element comprising the antistatic film and a recording layer which is photosensitive or heat-sensitive and is formed on one side of the antistatic film.
摘要:
Provided are a novel halogenoacetoxyadamantane derivative which is useful as a modifying agent for a resin for a photoresist and a dry etching resistance-improving agent in the photolithography field, agricultural and medical intermediates and a compound for other various industrial products and a process for producing the same. To be specific, provided are a halogenoacetoxyadamantane derivative having a halogenoacetoxy group in an adamantane skeleton and a process for producing a halogenoacetoxyadamantane derivative, comprising the step of reacting a hydroxyl group of an adamantane skeleton with halogenoacetic halide or reacting the above hydroxyl group with a lithiation agent to derive it into a lithiumoxy group and then reacting halogenoacetic halide to introduce a halogenoacetoxy group.
摘要:
Frequency dependency of an electrostatic actuator is improved by setting a driving voltage waveform. It has an electrode (11) that counters a vibrating plate (21) that constitutes a part of the surface of a wall of an ink chamber, and the vibrating plate (21) and the electrode are provided with a predetermined gap (40). Pulse voltage is applied between the electrode (11) and the vibrating plate (21), displacement of which is carried out by electrostatic force that pressurizes ink in the ink chamber according to mechanical resilience of the vibrating plate (21) such that an ink drop is ejected. The vibrating plate (21) is vibrated such that it may contact the electrode (11), ejecting the ink by one or a plurality of electric pulses. A ratio of the period during which the vibrating plate contacts the electrode to the period required to form a pixel is regulated to be equal to or less than (200−2.79×PV)%, where PV is a per cent ratio of displacement volume of the vibrating plate to a vibrating chamber that is the space defined by the vibrating plate and a board of the electrode.
摘要:
Frequency dependency of an electrostatic actuator is improved by setting a driving voltage waveform. It has an electrode (11) that counters a vibrating plate (21) that constitutes a part of the surface of a wall of an ink chamber, and the vibrating plate (21) and the electrode are provided with a predetermined gap (40). Pulse voltage is applied between the electrode (11) and the vibrating plate (21), displacement of which is carried out by electrostatic force that pressurizes ink in the ink chamber according to mechanical resilience of the vibrating plate (21) such that an ink drop is ejected. The vibrating plate (21) is vibrated such that it may contact the electrode (11), ejecting the ink by one or a plurality of electric pulses. A ratio of the period during which the vibrating plate contacts the electrode to the period required to form a pixel is regulated to be equal to or less than (200−2.79×PV) %, where PV is a per cent ratio of displacement volume of the vibrating plate to a vibrating chamber that is the space defined by the vibrating plate and a board of the electrode.
摘要:
A bare chip is provided with a pad for activation/deactivation control to which a deactivation control signal for converting a bare chip that has been detected as being defective into the deactivated condition is inputted. When a deactivation control signal is inputted to the pad for activation/deactivation control, internal circuit prevent a signal that has been inputted from the pad for data input/output control from being inputted to an internal circuit located further inside than the input buffer circuit. Thereby, the bare chip that has been detected as being defective can be converted to the deactivated condition. As a result, a semiconductor memory module can be obtained that can be repaired by newly mounting a good function chip without allowing the bare chip that has been detected as being defective to interfere with the functions of the semiconductor memory module.
摘要:
A catalyst which is able to express a high oligomerizing activity of ethylene and a method for the production of &agr;-olefin where ethylene is oligomerized using said catalyst are provided. The present invention relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-1) a transition metal complex of Groups 4 to 6 of the Periodic Table and also relates to a method for the production of &agr;-olefin by oligomerization of ethylene using said catalyst. The present invention further relates to a catalyst for the production of &agr;-olefin obtained by contacting (a) clay, clay mineral or ion-exchange layer compound with (b-2) a transition metal complex of Groups 8 to 10 of the Periodic Table and also relates to a method of the production of &agr;-olefin by oligomerization of ethylene using said catalyst.