公开(公告)号：US20180361225A1

公开(公告)日：2018-12-20

申请号：US16110075

申请日：2018-08-23

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Bartlet H. DeProspo ,  Michael Rizzolo

IPC: A63C5/07 ,  H05K5/00 ,  H02J7/00 ,  A63C5/12

Abstract: Embodiments are directed to a support apparatus. The support apparatus might comprise a body configured to support an entity. The body might comprise a material that has a physical property. The support apparatus might further comprise a coupler system configured to couple electric current from a power source to the material. The material is arranged such that coupling an electric current to the material changes the physical property of the material. Embodiments are further directed to a method. The method might comprise forming one or more cavities in a support apparatus. The method might further comprise providing one or more couplers in electrical contact with each of the one or more channels. The method further comprises filling each of the one or more cavities with a fluid that has electrically changeable rigidity. Finally, the method might comprise connecting a power source to each of the one or more couplers.

公开(公告)号：US10153202B2

公开(公告)日：2018-12-11

申请号：US15783658

申请日：2017-10-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Michael Rizzolo ,  Chih-Chao Yang

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/532

Abstract: A method of forming an interconnect that in one embodiment includes forming an opening in a dielectric layer, and treating a dielectric surface of the opening in the dielectric layer with a nitridation treatment to convert the dielectric surface to a nitrided surface. The method may further include depositing a tantalum containing layer on the nitrided surface. In some embodiments, the method further includes depositing a metal fill material on the tantalum containing layer. The interconnect formed may include a nitrided dielectric surface, a tantalum and nitrogen alloyed interface that is present on the nitrided dielectric surface, a tantalum layer on the tantalum and nitrogen alloy interface, and a copper fill.

公开(公告)号：US10150323B2

公开(公告)日：2018-12-11

申请号：US15055835

申请日：2016-02-29

Applicant: International Business Machines Corporation

Inventor： Benjamin David Briggs ,  Lawrence A. Clevenger ,  Bartlet H. DeProspo ,  Michael Rizzolo

IPC: G06K9/00 ,  B42D25/29 ,  G06F17/30 ,  B42D25/355 ,  B42D25/24

Abstract: An anti-counterfeiting method, system, and non-transitory computer readable medium, include a production circuit configured to produce a Directed Self-Assembly (DSA) pattern including a unique pattern, an analysis circuit configured to analyze the unique pattern, an embedding circuit configured to embed the unique pattern on a document, and a verification circuit configured to verify that the unique pattern embedded on the document corresponds to the document.

公开(公告)号：US20180315094A1

公开(公告)日：2018-11-01

申请号：US15825757

申请日：2017-11-29

Applicant: International Business Machines Corporation

Inventor： Maryam Ashoori ,  Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Michael Rizzolo

IPC: G06Q30/02 ,  G10L15/04 ,  G10L17/22 ,  G10L15/02 ,  G10L15/18 ,  G10L17/00

Abstract: A computer implemented method and system for identifying advertisements targeted to individuals based on analysis of audio recordings. The method includes recording audio input from at least one media transmission, analyzing the recorded media audio to identify content of the at least one media transmission, recording audio input from at least one individual, analyzing the recorded individual audio to classify the at least one individual into at least one segment, analyzing the recorded individual audio to identify at least one sentiment related to the identified media content, analyzing the at least one sentiment in context with the identified media content and identifying at least one advertisement targeted to the at least one segment based on the contextual analysis.

公开(公告)号：US20180207484A1

公开(公告)日：2018-07-26

申请号：US15416046

申请日：2017-01-26

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Christopher J. Penny ,  Michael Rizzolo ,  Aldis G. Sipolins

IPC: A63B24/00 ,  G06F3/01 ,  G06F3/0482 ,  G06T13/40 ,  G09B19/00

CPC classification number: G09B19/0038 ,  G06F3/011 ,  G09B5/06 ,  G16H20/30 ,  G16H40/67 ,  G16H50/20 ,  G16H50/70

Abstract: A system and method perform remote physical training. The method includes receiving movements performed by an operator who is remotely located, and presenting the movements of the operator as movements performed by an avatar representing the operator in a virtual reality environment. The method also includes remotely monitoring the movements of the avatar, and providing real-time feedback on the movements to the operator.

公开(公告)号：US10002762B2

公开(公告)日：2018-06-19

申请号：US15261291

申请日：2016-09-09

Applicant: International Business Machines Corporation

Inventor： Marc A. Bergendahl ,  Sean D. Burns ,  Lawrence A. Clevenger ,  Christopher J. Penny ,  Michael Rizzolo

IPC: H01L27/32 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/76816

Abstract: Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness TS. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than TS, using the first trim mask layer as an etch mask.

公开(公告)号：US09984935B2

公开(公告)日：2018-05-29

申请号：US15583595

申请日：2017-05-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Michael Rizzolo ,  Jay W. Strane

IPC: H01L21/8234 ,  H01L21/311 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L21/76232 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76229 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/66795

Abstract: A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag is tuned for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth. An etch block is formed in the narrow gaps. The wider gaps are etched to the target depth. The etch block is removed.

公开(公告)号：US20180076033A1

公开(公告)日：2018-03-15

申请号：US15261291

申请日：2016-09-09

Applicant: international Business Machines Corporation

Inventor： Marc A. Bergendahl ,  Sean D. Burns ,  Lawrence A. Clevenger ,  Christopher J. Penny ,  Michael Rizzolo

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155

Abstract: Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness TS. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than TS, using the first trim mask layer as an etch mask.

公开(公告)号：US20180047676A1

公开(公告)日：2018-02-15

申请号：US15684494

申请日：2017-08-23

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Bartlet H. DeProspo ,  Huai Huang ,  Christopher J. Penny ,  Michael Rizzolo

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/76816 ,  H01L21/76828 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/585 ,  H01L2924/3512

Abstract: Methods for enhancing mechanical strength of back-end-of-line (BEOL) dielectrics to prevent crack propagation within interconnect stacks are provided. After forming interconnect structures in a dielectric material layer, a pore filling material is introduced into pores of a portion of the dielectric material layer that is located in a crack stop region present around a periphery of a chip region. By filling the pores of the portion of the dielectric material layer located in the crack stop region, the mechanical strength of the dielectric material layer is selectively enhanced in the crack stop region.

公开(公告)号：US20170256494A1

公开(公告)日：2017-09-07

申请号：US15061388

申请日：2016-03-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Michael Rizzolo ,  Chih-Chao Yang

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: A method of forming an interconnect with a bamboo grain microstructure. The method includes forming a conductive filler layer in a trench of an insulating layer to a predetermined depth such that an aspect ratio of a top portion of the trench is reduced to a threshold level, depositing a metal layer over the conductive filler layer in the top portion of the trench, the metal layer having a plurality of small grains, and annealing the metal layer to provide a bamboo grain microstructure having larger grains than grain boundaries of the plurality of small grains.