公开(公告)号：US08334547B2

公开(公告)日：2012-12-18

申请号：US12187653

申请日：2008-08-07

申请人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L33/00

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。 这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US20120238109A1

公开(公告)日：2012-09-20

申请号：US13429901

申请日：2012-03-26

申请人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L21/312

CPC分类号： G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

摘要： According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

摘要翻译： 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

公开(公告)号：US20120228654A1

公开(公告)日：2012-09-13

申请号：US13221326

申请日：2011-08-30

申请人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US20120112171A1

公开(公告)日：2012-05-10

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L51/54 ,  H01L51/40

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US20120061712A1

公开(公告)日：2012-03-15

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US20120056232A1

公开(公告)日：2012-03-08

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/38 ,  H01L33/42 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US20110049556A1

公开(公告)日：2011-03-03

申请号：US12712693

申请日：2010-02-25

申请人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and they penetrate through the metal electrode layer. That metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 本发明提供即使电力增加也能够保持高亮度强度的半导体发光装置，因此该装置适用于照明装置如灯和灯。 该半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，穿过金属电极层。 该金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US20090079322A1

公开(公告)日：2009-03-26

申请号：US12187653

申请日：2008-08-07

申请人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01J1/54 ,  H01B13/00 ,  B05D5/12

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂，用于380nm至780nm。 这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内，开口的中心之间的间距不小于平均直径，不大于1/2 的入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US07505117B2

公开(公告)日：2009-03-17

申请号：US11168867

申请日：2005-06-29

申请人： Hiroshi Nomura ,  Koji Asakawa ,  Yuichi Motoi

发明人： Hiroshi Nomura ,  Koji Asakawa ,  Yuichi Motoi

IPC分类号： G03B27/72

CPC分类号： B82Y20/00 ,  G02B5/3058 ,  G02B5/3075 ,  G03F7/70133 ,  G03F7/70191 ,  G03F7/70566 ,  G03F7/70591

摘要： A polarizing element is disclosed which includes a smooth glass substrate and a polarization layer formed thereon, the polarization layer having polarization characteristics for the incident light. The polarization layer is made of a carbon-based substance including carbon atoms. The carbon atoms are continuously connected via carbon-carbon double bonds having [pi] electron clouds. The [pi] electron clouds have average continuous distance of 100 nm or more in a longitudinal direction and have an average continuous distance less than 50 nm in a transverse direction. The carbon-based substance is formed in such a way that a plurality of the [pi] electron clouds have longitudinal directions which are in parallel along the glass-substrate surface.

摘要翻译： 公开了一种偏振元件，其包括平滑玻璃基板和形成在其上的偏振层，所述偏振层具有用于入射光的偏振特性。 偏振层由包含碳原子的碳基物质制成。 碳原子通过具有π电子云的碳 - 碳双键连续连接。 π电子云在纵向具有100nm或更大的平均连续距离，并且在横向上具有小于50nm的平均连续距离。 碳基物质形成为使得多个π电子云具有沿着玻璃 - 衬底表面平行的纵向方向。

公开(公告)号：US07179672B2

公开(公告)日：2007-02-20

申请号：US10976987

申请日：2004-11-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Hitoshi Sugiyama ,  Kenichi Ohashi ,  Kenji Suzuki ,  Junichi Tonotani

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L21/0271

摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

摘要翻译： 在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。 本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。 这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。