公开(公告)号：US20100325648A1

公开(公告)日：2010-12-23

申请号：US12740982

申请日：2008-04-18

申请人： Satoshi Matsuyama ,  Hiroyuki Nakamura ,  Kenji Sakamoto ,  Jun Sasaki ,  Ryusuke Watanabe ,  Akio Uemichi

发明人： Satoshi Matsuyama ,  Hiroyuki Nakamura ,  Kenji Sakamoto ,  Jun Sasaki ,  Ryusuke Watanabe ,  Akio Uemichi

IPC分类号： H04N7/16 ,  H04N5/445

CPC分类号： H04N7/163 ,  G06Q30/02 ,  H04N21/44222 ,  H04N21/4662 ,  H04N21/4668

摘要： A conventional contents-watching device, etc. calculate users' tastes of contents only on the basis of watching frequencies, so that variety programs that the users are less interested in but that are broadcasted every week are apt to get a higher degree of users' tastes than a soccer game of the Japanese national team that the users are highly interested in but that is broadcasted only several times per year. In order to solve the problem set forth above, the present invention proposes a contents-watching device that calculates a taste value by normalizing a watching index indicative of the number of contents-watching times or the like for every contents-attribute with an emergent index indicative of the number of contents-watching chances, acquires an contents-attribute connected with contents to be a subject for watching recommendation, and has a function to calculate watching recommendation information by using the taste value of the contents-attribute.

摘要翻译： 传统的内容观看设备等只是在观看频率的基础上计算用户的口味，使得用户对每个人不太感兴趣但是每周广播的各种节目都容易获得更高的用户体验， 口味比日本国家队的足球比赛，用户非常感兴趣，但每年只播放几次。 为了解决上述问题，本发明提出了一种内容收看装置，其通过使用出现指标对每个内容属性规范表示内容观看次数等的观看指标来计算乐趣值 指示内容观看机会的数量，获取与内容相关联的内容属性作为用于观看推荐的对象，并且具有通过使用内容属性的品味值来计算观看推荐信息的功能。

公开(公告)号：US20100219718A1

公开(公告)日：2010-09-02

申请号：US12680774

申请日：2008-10-21

申请人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

发明人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

IPC分类号： H01L41/09 ,  H01L41/04

CPC分类号： H03H9/0222 ,  H03H9/02574

摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.

摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。

公开(公告)号：US20100194496A1

公开(公告)日：2010-08-05

申请号：US12757475

申请日：2010-04-09

申请人： Rei Goto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara

发明人： Rei Goto ,  Yosuke Hamaoka ,  Hiroyuki Nakamura ,  Tetsuya Tsurunari ,  Joji Fujiwara

IPC分类号： H01P5/12 ,  H03H9/17

CPC分类号： H03H9/6483 ,  H03H9/0071 ,  H03H9/02944 ,  H03H9/6496

摘要： An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.

摘要翻译： 声波共振装置包括：压电基板（1），设置在压电基板（1）的上表面上并包括第一叉指式换能器电极（110）的第一声波谐振器（100）和设置在第二声波谐振器 在压电基板（1）上并且包括第二叉指式换能器电极（210）。 第一声​​波谐振器（100）和第二声波谐振器（200）彼此连接。 形成第一声波谐振器（100）的多个第一梳状电极（112）的重叠宽度大于形成第二声波谐振器（200）的多个第二梳状电极（212）的重叠宽度。 通过这样的配置，可以分配产生横向模式杂散响应的频率，并且可以减少损耗。

公开(公告)号：US20100123240A1

公开(公告)日：2010-05-20

申请号：US12619561

申请日：2009-11-16

申请人： Yukihiro SATO ,  Katsuhiko Funatsu ,  Hiroyuki Nakamura

发明人： Yukihiro SATO ,  Katsuhiko Funatsu ,  Hiroyuki Nakamura

IPC分类号： H01L23/48 ,  H01L21/60 ,  H01L21/50

CPC分类号： H01L23/4334 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85013 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut.

摘要翻译： 半导体器件具有改进的可靠性。 通过焊料将半导体芯片安装在引线框架的芯片安装部分上。 金属板通过焊料布置在半导体芯片的源极焊盘和引线框架的引线部分的上方。 进行焊料回流工艺，从而通过焊料将半导体芯片连接在芯片安装部分上，并将金属板与其它焊料接合到源极焊盘和引线部分。 引线框架由铜合金形成，因此其软化温度高于焊料回流工艺的温度。 金属板由无氧铜形成，其软化温度低于焊锡回流工序的温度，由此金属板在回流焊工艺中软化。 此后，半导体芯片的栅极焊盘电极通过导线连接到引线部分，形成密封树脂部分，然后引线框架被切割。

公开(公告)号：US07701311B2

公开(公告)日：2010-04-20

申请号：US12185342

申请日：2008-08-04

申请人： Hiroyuki Nakamura ,  Keiji Onishi ,  Tomohiro Iwasaki

发明人： Hiroyuki Nakamura ,  Keiji Onishi ,  Tomohiro Iwasaki

IPC分类号： H03H9/70 ,  H03H9/72

CPC分类号： H03H9/706 ,  H03H9/0038 ,  H03H9/0042 ,  H03H9/0576 ,  H03H9/14588 ,  H03H9/72 ,  H03H9/725

摘要： One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.

摘要翻译： 连接到发送滤波器的多个发送终端中的一个和连接到接收滤波器的接收终端是平衡型终端，另一个是不平衡型终端。 传输滤波器和接收滤波器包括表面声波谐振器或薄膜体声共振器。 平衡型端子连接到纵模耦合表面声波滤波器。

公开(公告)号：US20100060102A1

公开(公告)日：2010-03-11

申请号：US12552606

申请日：2009-09-02

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/04

CPC分类号： H03H9/02897 ,  H03H9/0222 ,  H03H9/02559 ,  H03H9/02818

摘要： An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.

摘要翻译： 声波装置具有：压电体; 布置在压电体上的叉指电极，激发声波; 以及布置在所述压电体上以覆盖所述叉指电极的电介质层。 电介质层包括由横波传播速度向上连续增大的介质构成的组成变更部。 利用这种配置，可以通过在介电层内部传播的高阶模式将杂散辐射移位到更高的频率，以便减少杂散辐射对高阶模式的影响。

公开(公告)号：US20100044133A1

公开(公告)日：2010-02-25

申请号：US12445158

申请日：2007-11-22

申请人： Yasunobu Jufuku ,  Hiroshi Arisawa ,  Junji Nagasawa ,  Hiroyuki Nakamura ,  Miho Kizuki

发明人： Yasunobu Jufuku ,  Hiroshi Arisawa ,  Junji Nagasawa ,  Hiroyuki Nakamura ,  Miho Kizuki

IPC分类号： B60R16/04

CPC分类号： H01M8/00 ,  H01M8/247 ,  H01M2250/20 ,  Y02T90/32

摘要： A vehicle is equipped with fuel cells that is fastened to multiple side frames 810 arranged in parallel to each other and along a moving direction of the vehicle. The vehicle includes a support assembly arranged to span between the multiple side frames 810, a first fixation unit arranged to fasten the support assembly to the respective side frames 810, and a second fixation unit arranged to fix the fuel cells on the support assembly. This arrangement desirably reduces the influence of an external force applied to the fuel cells mounted on the vehicle and prevents an increase in total weight of the vehicle or a decrease in mounting space of the fuel cells.

摘要翻译： 车辆配备有燃料电池，其被固定到彼此平行布置并且沿着车辆的移动方向布置的多个侧框架810。 车辆包括布置成跨越多个侧框架810之间的支撑组件，布置成将支撑组件紧固到相应的侧框架810的第一固定单元和布置成将燃料电池固定在支撑组件上的第二固定单元。 这种布置理想地减小了施加到安装在车辆上的燃料电池的外力的影响，并且防止了车辆总重量的增加或燃料电池的安装空间的减小。

公开(公告)号：US20090267449A1

公开(公告)日：2009-10-29

申请号：US12428591

申请日：2009-04-23

申请人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

发明人： Rei Goto ,  Hidekazu Nakanishi ,  Hiroyuki Nakamura

IPC分类号： H01L41/04

CPC分类号： H03H9/0222

摘要： The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.

摘要翻译： 本发明的弹性波装置具有压电基板; 设置在所述压电基板上的第一电介质层; 设置在所述第一电介质层上的第二电介质层; 以及在第二电介质层上的声层。 确定第一和第二介电层的每个膜厚度提供有利的效果。 也就是说，作为主波的SH波的能量被限制在压电基板和第一介电层之间的边界中，同时，SV波被抑制为不需要的波。 该装置允许其位移分布类似于斯派利波波的SV波在第二介电层的上表面上具有位移分布并且被设置在第二介电层上的声层抑制。

公开(公告)号：US07579677B2

公开(公告)日：2009-08-25

申请号：US11585879

申请日：2006-10-25

申请人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

发明人： Osamu Ikeda ,  Masahide Okamoto ,  Hidemasa Kagii ,  Hiroi Oka ,  Hiroyuki Nakamura

IPC分类号： H01L23/495

CPC分类号： C22F1/08 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/3754 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

摘要翻译： 在功率半导体装置中，功率半导体元件与镀镍的框架之间的接合部由层叠结构构成，该叠层结构由功率半导体元件侧构成，熔点为260℃以上的金属间化合物层， Cu层，熔点为260℃以上的金属层，Cu层和熔点为260℃以上的金属间化合物层。 接头的结构缓冲了在半导体元件和具有大的热膨胀系数差的框架的接合处由二次安装和温度循环产生的应力。

公开(公告)号：US07573302B2

公开(公告)日：2009-08-11

申请号：US11961682

申请日：2007-12-20

申请人： Hiroyuki Nakamura

发明人： Hiroyuki Nakamura

IPC分类号： H03K5/153

CPC分类号： H03F3/4521 ,  H03F2200/456 ,  H03F2203/45091 ,  H03F2203/45101 ,  H03F2203/45354 ,  H03F2203/45366 ,  H03F2203/45646

摘要： There is provided a differential signal comparator which maintains the duty ratio of complementary input signals. The differential signal comparator includes differential amplifier circuits 1 and 2 receiving complementary input signals, a plurality of current amplifier circuits 3 to 6 for amplifying current output from the differential amplifier circuits and a current arithmetic operation circuit 7 for an arithmetic operation of an output from the plurality of current amplifier circuits 3 to 6 at the time of converting the differential signal between the complementary input signals into a voltage of CMOS level, wherein a capacitive load of an output of the differential amplifier circuit is constant independent of a level of the input signals. A voltage signal which is current-voltage converted to a complementary CMOS level signal is input into a differential comparator to obtain a single end CMOS level signal.

摘要翻译： 提供了一种维持互补输入信号的占空比的差分信号比较器。 差分信号比较器包括接收互补输入信号的差分放大器电路1和2，用于放大来自差分放大器电路的电流输出的多个电流放大器电路3至6和用于来自差分放大器电路的输出的算术运算的电流运算电路7 多个电流放大器电路3至6在将互补输入信号之间的差分信号转换成CMOS电平的电压时，其中差分放大器电路的输出的容性负载与输入信号的电平无关 。 将电流 - 电压转换为互补CMOS电平信号的电压信号输入到差分比较器，以获得单端CMOS电平信号。