公开(公告)号：US20160344384A1

公开(公告)日：2016-11-24

申请号：US14957984

申请日：2015-12-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Samuel Menard

IPC: H03K17/735

CPC classification number: H03K17/735 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/747 ,  H03K17/06 ,  H03K17/16 ,  H03K17/725 ,  H03K17/74 ,  H03K2017/066

Abstract: A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.

Abstract translation: 双向功率开关包括在开关的第一和第二导通端之间反向并联连接的第一和第二晶闸管。 第一晶闸管是阳极闸晶闸管，第二晶闸管是阴极闸极晶闸管。 第一和第二晶闸管的栅极通过相应的偶极子电路耦合到开关的相同控制端子。 偶极电路中的至少一个由至少一个二极管或至少一个电阻器形成。

公开(公告)号：US09455253B2

公开(公告)日：2016-09-27

申请号：US14730826

申请日：2015-06-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L27/08 ,  H01L23/528 ,  H01L29/747 ,  H01L29/08

CPC classification number: H01L27/0817 ,  H01L23/528 ,  H01L29/0834 ,  H01L29/747 ,  H01L2924/0002 ,  H01L2924/13033 ,  H01L2924/00

Abstract: A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor. A peripheral region surrounds the thyristors and connects the rear surface layer to a layer of the same conductivity type of the third thyristor located on the other side of the substrate. A metallization connects the rear surfaces of the first and second thyristors. An insulating structure is located between the rear surface layer of the third thyristor and the metallization. The insulating structure extends under the periphery of the first thyristor. The insulating structure includes a region made of an insulating material and a complementary region made of a semiconductor material.

Abstract translation: 形成在衬底中的双向开关包括反并联连接的第一和第二主垂直晶闸管。 第三辅助垂直晶闸管具有与第一晶闸管的后表面层共同的后表面层。 周边区域围绕晶闸管并且将后表面层连接到位于基板另一侧上的与第三晶闸管相同的导电类型的层。 金属化连接第一和第二晶闸管的后表面。 绝缘结构位于第三晶闸管的后表面层与金属化之间。 绝缘结构在第一晶闸管的外围延伸。 绝缘结构包括由绝缘材料制成的区域和由半导体材料制成的互补区域。

公开(公告)号：US20160183007A1

公开(公告)日：2016-06-23

申请号：US14849964

申请日：2015-09-10

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Sophie Ngo ,  Dominique Certon ,  Daniel Alquier

IPC: H04R19/00

CPC classification number: H04R19/00 ,  B06B1/0292 ,  H03H9/02228

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract translation: 声学电隔离装置包括能够传输声波的基板。 振动膜电声换能器的第一网络布置在基板的第一表面上。 振动膜电声换能器的第二网络布置在基板的第二相对表面上。 衬底的有效厚度相对于传播声波而在第一和第二表面之间呈现梯度。

公开(公告)号：US20160163659A1

公开(公告)日：2016-06-09

申请号：US14844626

申请日：2015-09-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Erwan Bruno ,  Abdelali Zaid

IPC: H01L23/66 ,  H01L21/84 ,  H01L21/306 ,  H01L27/02 ,  H01L27/12

CPC classification number: H01L23/66 ,  H01L21/30604 ,  H01L21/76264 ,  H01L21/76297 ,  H01L21/84 ,  H01L23/5222 ,  H01L23/5227 ,  H01L23/5228 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0688 ,  H01L27/08 ,  H01L27/0814 ,  H01L27/1203 ,  H01L2223/6661 ,  H01L2223/6672 ,  H01L2224/05572 ,  H01L2924/1421

Abstract: A device includes passive radio frequency components formed of portions of metal layers separated by insulating layers and crossed by vias. The insulating layers are positioned on an upper surface of an insulating substrate. Islands of a semiconductor material extend into the insulating substrate from the upper surface. Active integrated circuit components are formed in the islands.

Abstract translation: 一种装置包括由绝缘层隔开并与通孔隔开的部分金属层形成的无源射频分量。 绝缘层位于绝缘基板的上表面上。 半导体材料的岛从上表面延伸到绝缘基板中。 在岛上形成有源集成电路元件。

公开(公告)号：US09362842B2

公开(公告)日：2016-06-07

申请号：US14364857

申请日：2012-11-06

Applicant: STMicroelectronics (Tours) SAS

Inventor： Benoit Renard ,  Laurent Gonthier

IPC: H02M1/14 ,  H02M7/155 ,  H03K17/567 ,  H05B39/08 ,  H02M7/06 ,  H02M7/217

CPC classification number: H02M7/1555 ,  H02M7/06 ,  H02M7/217 ,  H03K17/567 ,  H05B39/08

Abstract: A control circuit varies the power of a load powered by an alternating voltage, comprising: a first thyristor and a first diode connected in antiparallel between first and second nodes, the cathode of the first diode being on the side of the first node; a second thyristor and a second diode connected in antiparallel between the second node and a third node, the cathode of the second diode being on the side of the third node; third and fourth diodes connected in antiseries between the first and third nodes, the cathodes of the third and fourth diodes being connected to a fourth node; a transistor between the second and fourth nodes; and a control unit for controlling the first and second thyristors and the transistor.

Abstract translation: 控制电路改变由交流电压供电的负载的功率，包括：第一晶闸管和连接在第一和第二节点之间的反平行的第一二极管，第一二极管的阴极位于第一节点的侧面; 在第二节点和第三节点之间反并联连接的第二晶闸管和第二二极管，第二二极管的阴极位于第三节点的一侧; 连接在第一和第三节点之间的反电容中的第三和第四二极管，第三和第四二极管的阴极连接到第四节点; 第二和第四节点之间的晶体管; 以及用于控制第一和第二晶闸管和晶体管的控制单元。

公开(公告)号：US20160111969A1

公开(公告)日：2016-04-21

申请号：US14826627

申请日：2015-08-14

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier

IPC: H02M7/06 ,  H02M7/155

CPC classification number: H02M7/06 ,  H02M1/081 ,  H02M7/155 ,  H02M7/1623

Abstract: A rectifying circuit includes a first diode coupled between a first terminal configured to receive application of an A.C. voltage and a first terminal configured to deliver a rectified voltage; and an anode-gate thyristor coupled between a second terminal configured to receive application of the A.C. voltage and a second terminal configured to deliver the rectified voltage, wherein an anode of the anode-gate thyristor is connected to the second terminal configured to deliver the rectified voltage.

Abstract translation: 整流电路包括耦合在被配置为接收交流电压的施加的第一端子和被配置为传送整流电压的第一端子之间的第一二极管; 以及耦合在被配置为接收所述AC电压的施加的第二端子和被配置为传送整流电压的第二端子之间的阳极栅极晶闸管，其中所述阳极栅极晶闸管的阳极连接到所述第二端子，所述第二端子被配置为传送整流的 电压。

公开(公告)号：US09240766B2

公开(公告)日：2016-01-19

申请号：US14227532

申请日：2014-03-27

Applicant: STMicroelectronics (Tours) SAS

Inventor： Claire Laporte ,  Hilal Ezzeddine

IPC: H03H7/46 ,  H01P5/18 ,  H03F3/195 ,  H03F3/24 ,  H04B1/04

CPC classification number: H03H7/468 ,  H01P5/18 ,  H03F3/195 ,  H03F3/24 ,  H03F3/245 ,  H03F2200/171 ,  H03F2200/204 ,  H03F2200/207 ,  H03F2200/414 ,  H04B2001/0408

Abstract: A coupling circuit, including: a coupler including a first conductive line and a second conductive line coupled to the first one; at each end of the second line of the coupler, a two-output signal splitter; and at each output of each splitter, a filtering function.

Abstract translation: 一种耦合电路，包括：耦合器，包括耦合到第一导线的第一导线和耦合到第一导线的第二导线; 在耦合器的第二线的每一端处有两个输出信号分离器; 并且在每个分离器的每个输出处，具有滤波功能。

公开(公告)号：US20150221628A1

公开(公告)日：2015-08-06

申请号：US14171931

申请日：2014-02-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Aurelie Arnaud

IPC: H01L27/02 ,  H01L27/08

CPC classification number: H01L27/0248 ,  H01L27/0259 ,  H01L27/0814

Abstract: An overvoltage protection device including: a doped substrate of a first conductivity type having a first doping level, coated with a doped epitaxial layer of the second conductivity type having a second doping level; a first doped buried region of the second conductivity type having a third doping level greater than the second level, located at the interface between the substrate and the epitaxial layer in a first portion of the device; and a second doped buried region of the first conductivity type having a fourth doping level greater than the first level, located at the interface between the substrate and the epitaxial layer in a second portion of the device.

Abstract translation: 一种过电压保护装置，包括：具有第一掺杂水平的第一导电类型的掺杂衬底，涂覆有具有第二掺杂水平的第二导电类型的掺杂外延层; 所述第二导电类型的第一掺杂掩埋区具有大于所述第二电平的第三掺杂水平，位于所述器件的第一部分中的所述衬底和所述外延层之间的界面处; 以及第一导电类型的第二掺杂掩埋区，其具有大于所述第一电平的第四掺杂水平，位于所述器件的第二部分中的所述衬底和所述外延层之间的界面处。

公开(公告)号：US09070738B2

公开(公告)日：2015-06-30

申请号：US14494692

申请日：2014-09-24

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard

IPC: H01L29/74 ,  H01L29/16 ,  H01L29/66 ,  H01L21/02 ,  H01L21/322 ,  H01L29/08 ,  H01L21/306

CPC classification number: H01L29/74 ,  H01L21/2807 ,  H01L21/306 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/102 ,  H01L29/32 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66363 ,  H01L29/66545 ,  H01L29/7408

Abstract: An SCR-type component of vertical structure has a main upper electrode formed on a silicon region of a first conductivity type which is formed in a silicon layer of a second conductivity type. The silicon region is interrupted in first areas where the material of the silicon layer comes into contact with the upper electrode, and is further interrupted in second areas filled with resistive porous silicon extending between the silicon layer and the main upper electrode.

Abstract translation: 垂直结构的SCR型分量具有形成在第二导电类型的硅层中的形成在第一导电类型的硅区上的主上电极。 在硅层的材料与上电极接触的第一区域中，硅区被中断，并且在硅层和主上电极之间延伸的第二区填充有电阻性多孔硅，进一步中断。

公开(公告)号：US09018118B2

公开(公告)日：2015-04-28

申请号：US13716544

申请日：2012-12-17

Applicant: Mitsubishi Materials Corporation ,  STMicroelectronics(Tours) SAS

Inventor： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Guillaume Guegan

IPC: C04B35/00 ,  C09D5/00 ,  H01B3/10 ,  H01G4/33

CPC classification number: C09D5/00 ,  H01B3/10 ,  H01G4/33

Abstract: A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002

Abstract translation: 提供一种液体组合物，用于形成混合复合金属氧化物形式的薄膜，其中将含有铜（Cu）和含有锰（Mn）的复合氧化物C的复合氧化物B混合到由 通式为Ba1-xSrxTiyO3，其中复合氧化物B与复合金属氧化物A的摩尔比B / A在0.002