公开(公告)号：US20140125201A1

公开(公告)日：2014-05-08

申请号：US14071025

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H01L41/09 ,  B81B7/02

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.

Abstract translation: 微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

公开(公告)号：US20140106564A1

公开(公告)日：2014-04-17

申请号：US13850588

申请日：2013-03-26

Applicant: RF MICRO DEVICES, INC.

Inventor： John August Orlowski ,  David Jandzinski

IPC: H01L21/768

CPC classification number: H01L21/76838 ,  H01L21/4832 ,  H01L23/49582 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A first plate-able layer is selectively plated to form one or more redistribution paths. The connection points of an IC package are connected to the redistribution paths, and the IC package is over molded for stability. The first plate-able layer is then removed, leaving the one or more redistribution paths exposed. The redistribution paths allow one or more contact points of the IC package to be moved to a new location in order to facilitate integration of the IC package into a system. By plating the redistribution paths up from the first plate-able layer, fine geometries for repositioning the contact points of the IC package with minimal conductor thickness are achieved without the need for specialized manufacturing equipment. Accordingly, a redistribution layer is formed at a low cost while minimizing the impact of the layer on the operation of the IC device.

Abstract translation: 选择性地电镀第一可镀层以形成一个或多个再分布路径。 IC封装的连接点连接到再分配路径，并且IC封装过度模制以确保稳定性。 然后去除第一耐热层，留下暴露的一个或多个再分布路径。 再分配路径允许IC封装的一个或多个接触点移动到新位置，以便于将IC封装集成到系统中。 通过从第一可镀层向上镀覆再分配路径，实现了不需要专门制造设备的精细几何形状，用于以最小的导体厚度重新定位IC封装的接触点。 因此，以低成本形成再分布层，同时最小化层对IC器件的操作的影响。

公开(公告)号：US20140097895A1

公开(公告)日：2014-04-10

申请号：US14101770

申请日：2013-12-10

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Michael R. Kay ,  Philippe Gorisse

IPC: H03F3/217

CPC classification number: H03F3/217 ,  H02M3/07 ,  H02M2001/0025 ,  H03F1/0244 ,  H03F1/025 ,  H03F1/0277 ,  H03F1/42 ,  H03F3/195 ,  H03F3/245 ,  H03F3/3022 ,  H03F3/45475 ,  H03F3/505 ,  H03F3/72 ,  H03F2200/102 ,  H03F2200/204 ,  H03F2200/36 ,  H03F2200/375 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2200/78 ,  H03F2203/45526 ,  H03F2203/45544 ,  H03F2203/45594 ,  H03F2203/45694 ,  H03F2203/45712 ,  H03F2203/45718 ,  H03F2203/7221

Abstract: A switch mode power supply converter and a feedback delay compensation circuit are disclosed. The switch mode power supply converter has a switching voltage output and provides a switching voltage at the switching voltage output, such that a target voltage for a power amplifier supply voltage at a power amplifier supply output is based on the switching voltage. Further, the switching voltage is based on an early indication of a change of the target voltage. The feedback delay compensation circuit provides the early indication of the change of the target voltage.

Abstract translation: 公开了开关模式电源转换器和反馈延迟补偿电路。 开关模式电源转换器具有开关电压输出，并且在开关电压输出端提供开关电压，使得功率放大器电源输出端的功率放大器电源电压的目标电压基于开关电压。 此外，开关电压基于目标电压的变化的早期指示。 反馈延迟补偿电路提供目标电压变化的早期指示。

公开(公告)号：US20140054604A1

公开(公告)日：2014-02-27

申请号：US13974488

申请日：2013-08-23

Applicant: RF Micro Devices, Inc.

Inventor： Andrew P. Ritenour

IPC: H01L23/34 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/66462 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/76898 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/4824 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having improved heat dissipation is disclosed. The semiconductor device includes a semi-insulating substrate and epitaxial layers disposed on the semi-insulating substrate wherein the epitaxial layers include a plurality of heat conductive vias that are disposed through the epitaxial layers with the plurality of heat conductive vias being spaced along a plurality of finger axes that are aligned generally parallel across a surface of the epitaxial layers. The semiconductor device further includes an electrode having a plurality of electrically conductive fingers that are disposed along the plurality of finger axes such that the electrically conductive fingers are in contact with the first plurality of heat conductive vias.

Abstract translation: 公开了一种具有改善的散热的半导体器件。 半导体器件包括半绝缘衬底和设置在半绝缘衬底上的外延层，其中外延层包括多个导热通孔，其布置成穿过外延层，多个导热通孔沿着多个 大致平行于外延层的表面对准的手指轴。 半导体器件还包括具有多个导电指状物的电极，沿着多个指状轴设置，使得导电指状物与第一多个导热通孔接触。

公开(公告)号：US20140054585A1

公开(公告)日：2014-02-27

申请号：US13973482

申请日：2013-08-22

Applicant: RF Micro Devices, Inc.

Inventor： Andrew P. Ritenour

IPC: H01L27/02

CPC classification number: H01L27/0248 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41775 ,  H01L29/778 ,  H01L29/861

Abstract: A lateral semiconductor device having a vertical region for providing a protective avalanche breakdown (PAB) is disclosed. The lateral semiconductor device has a lateral structure that includes a conductive substrate, semi-insulating layer(s) disposed on the conductive substrate, device layer(s) disposed on the semi-insulating layer(s), along with a source electrode and a drain electrode disposed on the device layer(s). The vertical region is separated from the source electrode by a lateral region wherein the vertical region has a relatively lower breakdown voltage level than a relatively higher breakdown voltage level of the lateral region for providing the PAB within the vertical region to prevent a potentially damaging breakdown of the lateral region. The vertical region is structured to be more rugged than the lateral region and thus will not be damaged by a PAB event.

Abstract translation: 公开了具有用于提供保护性雪崩击穿（PAB）的垂直区域的横向半导体器件。 横向半导体器件具有横向结构，其包括导电衬底，设置在导电衬底上的半绝缘层，设置在半绝缘层上的器件层以及源电极和 漏电极设置在器件层上。 垂直区域通过横向区域与源极分离，其中垂直区域具有比用于在垂直区域内提供PAB的相对较高的击穿电压电平相对较低的击穿电压电平，以防止潜在的破坏性破坏 侧面区域。 垂直区域被构造成比横向区域更坚固，因此不会被PAB事件损坏。

公开(公告)号：US20140038675A1

公开(公告)日：2014-02-06

申请号：US14051601

申请日：2013-10-11

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Alexander Wayne Hietala

IPC: H04W52/02

CPC classification number: H04W52/0251 ,  H03F1/02 ,  H03F1/0227 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03F2203/7209 ,  H03F2203/7221 ,  H04B1/0067 ,  H04B2001/045 ,  H04L5/001

Abstract: A front end radio architecture (FERA) with power management is disclosed. The FERA includes a first power amplifier (PA) block having a first-first PA for amplifying first-first signals and a first-second PA for amplifying first-second signals. Also included is a second PA block having a second-first PA for amplifying second-first signals and a second-second PA for amplifying second-second signals. At least one power supply is adapted to selectively supply power to the first-first PA and the second-second PA through a first path. The power supply is also adapted to selectively supply power to the first-second PA and the second-first PA through a second path. A control system is adapted to selectively enable and disable the first-first PA, the first-second PA, the second-first PA, and the second-second PA.

Abstract translation: 公开了具有电源管理的前端无线电架构（FERA）。 FERA包括具有用于放大第一信号的第一第一PA和用于放大第一秒信号的第一秒PA的第一功率放大器（PA）模块。 还包括具有用于放大第二第一信号的第二第一PA和用于放大第二秒信号的第二秒PA的第二PA块。 至少一个电源适于通过第一路径选择性地向第一首PA和第二秒PA供电。 电源还适于通过第二路径选择性地向第一和第二PA供电。 控制系统适于选择性地启用和禁用第一优先PA，第一秒PA，第二优先PA和第二秒PA。

公开(公告)号：US20140009200A1

公开(公告)日：2014-01-09

申请号：US14022940

申请日：2013-09-10

Applicant: RF Micro Devices, Inc.

Inventor： Michael R. Kay ,  Philippe Gorisse ,  Nadim Khlat

IPC: H03K5/14

CPC classification number: H03K5/14 ,  H02M3/07 ,  H03F1/0244 ,  H03F1/025 ,  H03F1/0277 ,  H03F1/42 ,  H03F3/195 ,  H03F3/245 ,  H03F3/3022 ,  H03F3/45475 ,  H03F3/505 ,  H03F3/72 ,  H03F2200/102 ,  H03F2200/204 ,  H03F2200/36 ,  H03F2200/375 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2200/78 ,  H03F2203/45526 ,  H03F2203/45544 ,  H03F2203/45594 ,  H03F2203/45694 ,  H03F2203/45712 ,  H03F2203/45718 ,  H03F2203/7221

Abstract: Programmable delay circuitry, which includes an input buffer circuit and variable delay circuitry, is disclosed. The variable delay circuitry includes an input stage, a correction start voltage circuit, and a variable delay capacitor. The input buffer circuit is coupled to the input stage, the correction start voltage circuit is coupled to the input stage, and the variable delay capacitor is coupled to the input stage. The programmable delay circuitry is configured to provide a fixed time delay and a variable time delay.

Abstract translation: 公开了包括输入缓冲电路和可变延迟电路的可编程延迟电路。 可变延迟电路包括输入级，校正开始电压电路和可变延迟电容器。 输入缓冲电路耦合到输入级，校正开始电压电路耦合到输入级，可变延迟电容耦合到输入级。 可编程延迟电路被配置为提供固定的时间延迟和可变的时间延迟。

公开(公告)号：US20130344833A1

公开(公告)日：2013-12-26

申请号：US14010630

申请日：2013-08-27

Applicant: RF Micro Devices, Inc

Inventor： Brian Baxter ,  Jason Millard ,  Roman Zbigniew Arkiszewski ,  Steven Selby

IPC: H03G3/20

CPC classification number: H03G99/00 ,  H03G3/20 ,  H03G3/3042 ,  H04B1/62

Abstract: The present disclosure relates to envelope power supply calibration of a multi-mode RF power amplifier (PA) to ensure adequate headroom when operating using one of multiple communications modes. The communications modes may include multiple modulation modes, a half-duplex mode, a full-duplex mode, or any combination thereof. As such, each communications mode may have specific peak-to-average power and linearity requirements for the multi-mode RF PA. As a result, each communications mode may have corresponding envelope power supply headroom requirements. The calibration may include determining a saturation operating constraint based on calibration data obtained during saturated operation of the multi-mode RF PA. During operation of the multi-mode RF PA, the envelope power supply may be restricted to provide a minimum allowable magnitude based on an RF signal level of the multi-mode RF PA, the communications mode, and the saturation operating constraint to provide adequate headroom.

Abstract translation: 本公开涉及多模RF功率放大器（PA）的包络电源校准，以在使用多种通信模式中的一种进行操作时确保足够的余量。 通信模式可以包括多种调制模式，半双工模式，全双工模式或其任何组合。 因此，每个通信模式可以具有针对多模式RF PA的特定的峰均功率和线性要求。 因此，每个通信模式可以具有对应的信封电源余量要求。 校准可以包括基于在多模式RF PA的饱和操作期间获得的校准数据来确定饱和操作约束。 在多模RFPA的操作期间，可以限制包络电源以基于多模式RF PA的RF信号电平，通信模式和饱和操作约束提供最小允许幅度，以提供足够的余量 。

公开(公告)号：US20130337752A1

公开(公告)日：2013-12-19

申请号：US13943969

申请日：2013-07-17

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04B1/44

CPC classification number: H04B1/44 ,  B81B7/02 ,  H01P1/15

Abstract: RF front-end circuitry arranged to provide for RF Multiple-Input and Multiple-Output (MIMO) signals is disclosed. In one embodiment, the RF front-end circuitry may include an antenna port, a first multiple throw (MT) switch, and a second MT switch. The first MT switch is configured to selectively couple a first pole port to any one of a first set of throw ports, and the second MT switch is configured to selectively couple a second pole port to any one of a second set of throw ports. The first pole port of the first MT switch is coupled to the antenna port. More than one of the second set of throw ports of the second MT switch are coupled to transmit one or more receive MIMO signals to RF transceiver circuitry. Accordingly, the RF front-end circuitry routes receive MIMO signals from the antenna port to the RF transceiver circuitry.

Abstract translation: 布置成提供RF多输入和多输出（MIMO）信号的RF前端电路被公开。 在一个实施例中，RF前端电路可以包括天线端口，第一多掷（MT）开关和第二MT开关。 第一MT开关被配置为选择性地将第一极端口耦合到第一组投掷端口中的任何一个，并且第二MT开关被配置为选择性地将第二极端口耦合到第二组投掷端口中的任何一个。 第一MT开关的第一极端口耦合到天线端口。 第二MT开关的第二组投掷端口中的多于一个被耦合以将一个或多个接收MIMO信号传输到RF收发器电路。 因此，RF前端电路路由从天线端口接收MIMO信号到RF收发器电路。

公开(公告)号：US20130321077A1

公开(公告)日：2013-12-05

申请号：US13961088

申请日：2013-08-07

Applicant: RF Micro Devices, Inc.

Inventor： Erik Pedersen ,  Søren Deleuran Laursen ,  Jean-Christophe Berchtold

IPC: H03G3/00

CPC classification number: H03G3/004 ,  H03F1/0238 ,  H03F3/195 ,  H03F3/245 ,  H03F3/45179 ,  H03F2200/447 ,  H03F2200/504 ,  H03F2200/555

Abstract: A power amplification device is disclosed that includes a power amplification circuit operable to amplify a radio frequency (RF) signal in accordance with an amplification gain, and a voltage regulation circuit operable to generate a regulated voltage. A regulated voltage level of the regulated voltage sets the amplification gain. To help prevent the voltage regulation circuit from saturating, the voltage regulation circuit is configured to reduce a voltage adjustment gain when the regulated voltage level reaches a threshold voltage level. In one embodiment, the threshold voltage level is set to be higher when a band-select signal indicates that the RF signal is being transmitted within a first frequency band, and is set to be lower when the band-select signal indicates that the RF signal is being transmitted within a second frequency band. The spectral performance of the power amplification device thus improves with regard to the second frequency band.

Abstract translation: 公开了一种功率放大装置，其包括功率放大电路，其可操作以根据放大增益放大射频（RF）信号，以及电压调节电路，其可操作以产生调节电压。 调节电压的稳定电压设置放大增益。 为了防止电压调节电路饱和，调压电路被配置为当调节电压电平达到阈值电压电平时降低电压调节增益。 在一个实施例中，当频带选择信号指示RF信号在第一频带内传输时，将阈值电压电平设置得较高，并且当频带选择信号指示RF信号 在第二频带内传输。 因此功率放大装置的光谱性能相对于第二频带而改善。