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    SELECTIVE DEPOSITION FOR SUB 20 NM PITCH EUV PATTERNING
    124.
    发明公开
    SELECTIVE DEPOSITION FOR SUB 20 NM PITCH EUV PATTERNING 审中-公开

    公开(公告)号：US20240055255A1

    公开(公告)日：2024-02-15

    申请号：US17880797

    申请日：2022-08-04

    Applicant: Applied Materials, Inc.

    Inventor： Zeqing Shen ,  Xinke Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

    IPC: H01L21/033 ,  H01L21/02

    CPC classification number: H01L21/0337 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02211

    Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

    SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS
    125.
    发明公开
    SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS 审中-公开

    公开(公告)号：US20230360906A1

    公开(公告)日：2023-11-09

    申请号：US17737328

    申请日：2022-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/02211 ,  H01L21/02532 ,  H01L21/02123 ,  H01L21/0234 ,  H01L21/31111 ,  H01L29/42392

    Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor, the carbon-containing precursor, and the oxygen-containing precursor at a temperature less than or about 700° C. The methods may include forming a silicon-and-carbon-containing layer on the substrate.

    Molecular layer deposition contact landing protection for 3D NAND
    127.
    发明授权
    Molecular layer deposition contact landing protection for 3D NAND 有权

    公开(公告)号：US11756785B2

    公开(公告)日：2023-09-12

    申请号：US17407553

    申请日：2021-08-20

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/02115 ,  H01L21/31111

    Abstract: Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.

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