NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
    122.
    发明申请
    NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
    非易失性存储元件和非易失性存储器件

    公开(公告)号:US20140061579A1

    公开(公告)日:2014-03-06

    申请号:US13995383

    申请日:2012-10-22

    IPC分类号: H01L45/00 H01L27/24

    摘要: A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.

    摘要翻译: 可变电阻非易失性存储元件包括第一电极,第二电极和可变电阻层,包括:包含具有非化学计量组成的金属氧化物并包括p型载流子的第一氧化物层; 位于第一氧化物层之间并与第一氧化物层接触的第二氧化物层和第二电极,并且包括具有非化学计量组成并包括n型载体的金属氧化物; 位于所述第一氧化物层中的与第一电极没有接触并且氧含量原子百分比高于第一氧化物层的氧储存区; 以及位于所述第二氧化物层中的与氧储存区接触并且氧含量原子百分比低于第二氧化物层的原子百分比的局部区域。

    Nonvolatile semiconductor memory apparatus and manufacturing method thereof
    123.
    发明授权
    Nonvolatile semiconductor memory apparatus and manufacturing method thereof 有权
    非易失性半导体存储装置及其制造方法

    公开(公告)号:US08559205B2

    公开(公告)日:2013-10-15

    申请号:US13563321

    申请日:2012-07-31

    IPC分类号: G11C17/00

    摘要: A nonvolatile semiconductor memory apparatus including a substrate, lower-layer electrode wires provided on the substrate, an interlayer insulating layer provided with contact holes at locations respectively opposite to the lower-layer electrode wires, resistance variable layers which are respectively connected to the lower-layer electrode wires; and non-ohmic devices which are respectively provided on the resistance variable layers. The non-ohmic devices each has a laminated-layer structure including plural semiconductor layers, a laminated-layer structure including a metal electrode layer and an insulator layer, or a laminated-layer structure including a metal electrode layer and a semiconductor layer. One layer of the laminated-layer structure is embedded to fill each of the contact holes and the semiconductor layer or the insulator layer which is the other layer of the laminated-layer structure has a larger area than an opening of each of the contact holes and is provided on the interlayer insulating layer.

    摘要翻译: 一种非易失性半导体存储装置,包括基板,设置在基板上的下层电极布线,在与下层电极布线分别相对的位置设置有接触孔的层间绝缘层,分别与下层电极布线连接的电阻变化层, 层电极线; 以及分别设置在电阻变化层上的非欧姆器件。 非欧姆性器件各自具有包括多个半导体层的层压层结构,包括金属电极层和绝缘体层的层叠层结构,或者包括金属电极层和半导体层的层叠结构。 嵌入层叠层结构的一层以填充每个接触孔,作为层叠层结构的另一层的半导体层或绝缘体层的面积比每个接触孔的开口大, 设置在层间绝缘层上。

    Nonvolatile memory element and semiconductor memory device including nonvolatile memory element
    124.
    发明授权
    Nonvolatile memory element and semiconductor memory device including nonvolatile memory element 有权
    包括非易失性存储元件的非易失性存储元件和半导体存储器件

    公开(公告)号:US08339835B2

    公开(公告)日:2012-12-25

    申请号:US13000243

    申请日:2010-04-22

    IPC分类号: G11C11/00

    摘要: A nonvolatile memory element includes a current controlling element having a non-linear current-voltage characteristic, a resistance variable element which changes reversibly between a low-resistance state and a high-resistance state in which a resistance value of the resistance variable element is higher than a resistance value of the resistance variable element in the low-resistance state, in response to voltage pulses applied, and a fuse. The current controlling element, the resistance variable element and the fuse are connected in series, and the fuse is configured to be blown when the current controlling element is substantially short-circuited.

    摘要翻译: 非易失性存储元件包括具有非线性电流 - 电压特性的电流控制元件,在电阻可变元件的电阻值较高的低电阻状态与高电阻状态之间可逆地改变的电阻可变元件 比电阻可变元件在低电阻状态下的电阻值,响应于施加的电压脉冲和保险丝。 电流控制元件,电阻可变元件和保险丝串联连接,并且当电流控制元件基本上短路时,保险丝被配置为被熔断。

    METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE
    125.
    发明申请
    METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE 有权
    用于制造非易失性存储器件,非易失性存储器元件和非易失性存储器件的方法

    公开(公告)号:US20120319072A1

    公开(公告)日:2012-12-20

    申请号:US13580401

    申请日:2011-02-23

    IPC分类号: H01L47/00 H01L21/02

    摘要: A manufacturing method for manufacturing, with a simple process, a non-volatile memory apparatus having a stable memory performance includes: (a) forming a stacking-structure body above a substrate by alternately stacking conductive layers comprising a transition metal and interlayer insulating films comprising an insulating material; (b) forming a contact hole penetrating through the stacking-structure body to expose part of each of the conductive layers; (c) forming variable resistance layers by oxidizing the part of each of the conductive layers, the part being exposed in the contact hole, and each of the variable resistance layers having a resistance value that reversibly changes according to an application of an electric signal; and (d) forming a pillar electrode in the contact hole by embedding a conductive material in the contact hole, the pillar electrode being connected to each of the variable resistance layers.

    摘要翻译: 一种以简单的工艺制造具有稳定的存储性能的非易失性存储装置的制造方法包括:(a)通过交替堆叠包括过渡金属和层间绝缘膜的导电层,在衬底上形成堆叠结构体,所述导电层包括: 绝缘材料; (b)形成穿过堆叠结构体的接触孔,以暴露出每个导电层的部分; (c)通过氧化每个导电层的一部分形成可变电阻层,该部分暴露在接触孔中,并且每个可变电阻层具有根据电信号的应用可逆地改变的电阻值; 和(d)通过在接触孔中埋设导电材料而在接触孔中形成柱状电极,该柱状电极与各可变电阻层连接。

    Current rectifying element, memory device incorporating current rectifying element, and fabrication method thereof
    126.
    发明授权
    Current rectifying element, memory device incorporating current rectifying element, and fabrication method thereof 有权
    电流整流元件,并联电流整流元件的存储器件及其制造方法

    公开(公告)号:US08295123B2

    公开(公告)日:2012-10-23

    申请号:US12669174

    申请日:2008-07-11

    IPC分类号: G11C13/00

    摘要: In a current rectifying element (10), a barrier height φA of a center region (14) of a barrier layer (11) in a thickness direction thereof sandwiched between a first electrode layer (12) and a second electrode layer (13) is formed to be larger than a barrier height φB of a region in the vicinity of an interface (17) between the barrier layer (11) and the first electrode layer (12) and an interface (17) between the barrier layer (11) and the second electrode layer (13). The barrier layer (11) has, for example, a triple-layer structure of barrier layers (11a), (11b) and (11c). The barrier layers (11a), (11b) and (11c) are, for example, formed by SiN layers of SiNx2, SiNx1, and SiNx1 (X1

    摘要翻译: 在电流整流元件(10)中,阻挡层(11)在其厚度方向上的中心区域(14)的阻挡高度& A被夹在第一电极层(12)和第二电极层(13)之间 )形成为大于阻挡层(11)和第一电极层(12)之间的界面(17)附近的区域和阻挡层(17)之间的界面(17)的势垒高度B (11)和第二电极层(13)。 阻挡层(11)具有例如阻挡层(11a),(11b)和(11c)的三层结构。 阻挡层(11a),(11b)和(11c)例如由SiNx2,SiNx1和SiNx1(X1

    Blood analysis apparatus
    127.
    发明申请
    Blood analysis apparatus 有权
    血液分析仪

    公开(公告)号:US20120094367A1

    公开(公告)日:2012-04-19

    申请号:US12311175

    申请日:2007-09-20

    IPC分类号: C12M1/40

    摘要: The present invention relates to a blood analysis apparatus X for measuring concentrations of glucose and glycohemoglobin in blood. The blood analysis apparatus X is configured to perform the concentration measurement of the glucose and the glycohemoglobin by one sampling of blood 13. The blood analysis apparatus X is preferably configured to simultaneously carry out sample preparations for concentration measurement of the glucose and the glycohemoglobin by one sample preparation. The blood analysis apparatus X may be configured to perform dilution of a blood sample for measuring the glycohemoglobin and dilution of a blood sample for measuring the glucose using the same diluent.

    摘要翻译: 血液分析装置技术领域本发明涉及用于测定血液中葡萄糖和糖血红蛋白浓度的血液分析装置X. 血液分析装置X构成为通过血液13的一次取样来进行葡萄糖和糖血红蛋白的浓度测定。血液分析装置X优选同时进行葡萄糖和糖血红蛋白的浓度测定用样品制剂1 样品制备。 血液分析装置X可以被配置为执行用于测量糖血红蛋白的血液样品的稀释和用于使用相同的稀释剂测量葡萄糖的血液样品的稀释。

    Diluent for Preparing Analytical Sample
    128.
    发明申请
    Diluent for Preparing Analytical Sample 审中-公开
    稀释剂用于制备分析样品

    公开(公告)号:US20120015388A1

    公开(公告)日:2012-01-19

    申请号:US13166575

    申请日:2011-06-22

    IPC分类号: C12Q1/54 C12M1/40

    摘要: The ionic strength of a diluent for preparing an analytical sample is set to be 0.06 to 0.16. The analytical sample prepared by using the diluent having the ionic strength within this range can be subjected to both for analyzing a first object in a test sample by electrode method and for analyzing a second object in the test sample by liquid chromatography method, and high-precision measurement can be attained. The analytical sample is especially useful for preparing a sample for measurement used both for measuring glucose concentration in a blood sample by enzyme electrode method and for measuring glycohemoglobin concentration in the blood sample by liquid chromatography method.

    摘要翻译: 用于制备分析样品的稀释剂的离子强度设定为0.06至0.16。 通过使用离子强度在该范围内的稀释剂制备的分析样品可以通过电极法分析测试样品中的第一个物体,并通过液相色谱法分析测试样品中的第二个物体, 可以进行精度测量。 分析样品特别适用于制备用于通过酶电极法测量血液样品中的葡萄糖浓度并通过液相色谱法测量血液样品中的糖血红蛋白浓度的测量样品。

    Method for Measuring Plasma Glucose
    129.
    发明申请
    Method for Measuring Plasma Glucose 审中-公开
    等离子体葡萄糖测定方法

    公开(公告)号:US20110318767A1

    公开(公告)日:2011-12-29

    申请号:US13159226

    申请日:2011-06-13

    摘要: A measurement of plasma glucose is carried out through the following steps, a sample preparation step (S101, S102) of preparing a measurement sample by hemolyzing hemocytes in blood, a step of measuring whole blood glucose (S103 to S105) of measuring a glucose concentration in whole blood with the measurement sample, and a step of calculating a liquid content ratio of whole blood (S109) of calculating a liquid content ratio of whole blood from a hemocyte/plasma ratio in the blood hemocyte and predetermined ratios of liquid components of hemocytes and of liquid components of plasma.

    摘要翻译: 通过以下步骤进行血浆葡萄糖的测定,通过血液中的血细胞溶血来制备测定试样的样品制备工序(S101,S102),测定全血的葡萄糖浓度的步骤(S103〜S105) 与测量样品的全血中,计算全血中的液体含有比例(S109),从血细胞中的血细胞/血浆比计算全血的液体含有率和血细胞的液体成分的预定比例 和等离子体的液体成分。