公开(公告)号：US20140301419A1

公开(公告)日：2014-10-09

申请号：US14308445

申请日：2014-06-18

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01S5/30 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01L21/02631 ,  H01L33/32 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

Abstract translation: 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

公开(公告)号：US20140211820A1

公开(公告)日：2014-07-31

申请号：US14229674

申请日：2014-03-28

Applicant: The Regents of the University of California

Inventor： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/343

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US08653503B2

公开(公告)日：2014-02-18

申请号：US13718152

申请日：2012-12-18

Applicant: The Regents of the University of California

Inventor： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/06

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20130126828A1

公开(公告)日：2013-05-23

申请号：US13718152

申请日：2012-12-18

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/30

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20130100978A1

公开(公告)日：2013-04-25

申请号：US13659191

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

IPC: H01L29/201 ,  H01S5/343 ,  H01L33/04

CPC classification number: H01L29/205 ,  B82Y20/00 ,  H01L29/2003 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

Abstract: An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region.

Abstract translation: 一种（Al，In，B，Ga）N基装置，其包括覆盖半极性或非极性GaN衬底的多个（Al，In，B，Ga）N层，其中（Al，In，B，Ga ）N层至少包括缺陷层，阻挡层和有源区，阻挡层位于器件的有源区和缺陷层之间，并且阻挡层具有比周围层更大的带隙以防止载流子 从有源区域转移到缺陷层。 一个或多个（AlInGaN）器件层位于（Al，In，B，Ga）N层的上方和/或下方。 还描述了至少包括活性区域的非极性或半极性（Al，In，B，Ga）N基光电器件，其中应力松弛（不匹配位错形成）位于有源区上方和/或下方的异质界面处。