公开(公告)号：US08282734B2

公开(公告)日：2012-10-09

申请号：US12255638

申请日：2008-10-21

Applicant: Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/32 ,  B05C11/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract translation: 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20120208373A1

公开(公告)日：2012-08-16

申请号：US13455984

申请日：2012-04-25

Applicant: DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

Inventor： DEENESH PADHI ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC: H01L21/31

CPC classification number: H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Abstract translation: 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US08043870B2

公开(公告)日：2011-10-25

申请号：US12437897

申请日：2009-05-08

Applicant: Antoine P. Manens ,  Wei-Yung Hsu ,  Hichem M'Saad

Inventor： Antoine P. Manens ,  Wei-Yung Hsu ,  Hichem M'Saad

IPC: H01L21/00

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B53/12

Abstract: In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.

Abstract translation: 在一个实施例中，提供了一种用于维持基板处理表面的方法。 该方法通常包括在衬底处理表面上执行一组测量，其中使用耦合到处理表面调节臂的位移传感器获取测量集合，基于该组测量确定处理表面轮廓，将处理表面 简档到最小配置文件阈值，并传达配置文件比较的结果。

公开(公告)号：US20110256041A1

公开(公告)日：2011-10-20

申请号：US12914822

申请日：2010-10-28

Applicant: Dustin W. HO ,  Juan Carlos ROCHA-ALVAREZ ,  Hichem M'SAAD

Inventor： Dustin W. HO ,  Juan Carlos ROCHA-ALVAREZ ,  Hichem M'SAAD

IPC: B01D61/00 ,  B01J8/00 ,  B01D53/38 ,  B01D63/00

CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/52

Abstract: A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.

Abstract translation: 用于过滤衬底处理设备中的流体的过滤器包括彼此连接的第一和第二阶段。 输送系统向过滤器提供蒸发的液体。 过滤器的第一阶段包括碱性化合物，并且过滤器的第二阶段包括干燥剂。 第二过滤器包括具有可渗透膜的渗透过滤器以过滤流体。 还描述了使用过滤器过滤流体以减少不期望的工艺残余物的形成的方法。

公开(公告)号：US07951730B2

公开(公告)日：2011-05-31

申请号：US12365669

申请日：2009-02-04

Applicant: Ritwik Bhatia ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

Inventor： Ritwik Bhatia ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0332 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76829

Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.

Abstract translation: 提供了形成氮化硅硬掩模的方法。 氮化硅硬掩模包括碳掺杂的氮化硅层和未掺杂的氮化硅层。 提供了在RF功率存在下由包含碳源化合物，硅源化合物和氮源的混合物沉积的碳掺杂氮化硅层。 还提供了UV后处理氮化硅层以提供氮化硅硬掩模的方法。 碳掺杂的氮化硅层和UV后处理的氮化硅层对于硬掩模层具有期望的湿蚀刻速率和干蚀刻速率。

公开(公告)号：US20110092077A1

公开(公告)日：2011-04-21

申请号：US12975833

申请日：2010-12-22

Applicant: HUIWEN XU ,  MEI-YEE SHEK ,  LI-QUN XIA ,  AMIR AL-BAYATI ,  DEREK WITTY ,  HICHEM M'SAAD

Inventor： HUIWEN XU ,  MEI-YEE SHEK ,  LI-QUN XIA ,  AMIR AL-BAYATI ,  DEREK WITTY ,  HICHEM M'SAAD

IPC: H01L21/30

CPC classification number: C23C16/308 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Abstract translation: 提供了在基板上处理膜的方法。 在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层，在从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。 薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。 薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。

公开(公告)号：US07871926B2

公开(公告)日：2011-01-18

申请号：US11876649

申请日：2007-10-22

Applicant: Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

Inventor： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

IPC: H01L21/4763 ,  H01L21/31

CPC classification number: H01L21/3185 ,  H01L21/31116 ,  H01L21/3143 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.

Abstract translation: 一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。 在至少一个特征上形成含氮介电层。 在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上 以第二速率被去除。 第一个比率大于第二个比率。 在含氮介电层上形成介电层。

公开(公告)号：US07802538B2

公开(公告)日：2010-09-28

申请号：US11608333

申请日：2006-12-08

Applicant: Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC: C23C16/00 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

Abstract: A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

Abstract translation: 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US07790583B2

公开(公告)日：2010-09-07

申请号：US11925611

申请日：2007-10-26

Applicant: Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

Inventor： Alexandros T. Demos ,  Khaled A. Elsheref ,  Josphine J. Chang ,  Hichem M'saad

IPC: H01L21/20

CPC classification number: B08B7/0035 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4405 ,  C23C16/56 ,  H01J37/3174 ,  Y10S438/905

Abstract: One embodiment of the present invention is a method for cleaning an electron beam treatment apparatus that includes: (a) generating an electron beam that energizes a cleaning gas in a chamber of the electron beam treatment apparatus; (b) monitoring an electron beam current; (c) adjusting a pressure of the cleaning gas to maintain the electron beam current at a substantially constant value; and (d) stopping when a predetermined condition has been reached.

Abstract translation: 本发明的一个实施例是一种清洗电子束处理装置的方法，其包括：（a）产生电子束，该电子束激励电子束处理装置的腔室中的清洁气体; （b）监测电子束电流; （c）调节清洁气体的压力以将电子束电流保持在基本恒定的值; 和（d）当达到预定条件时停止。

公开(公告)号：US07780865B2

公开(公告)日：2010-08-24

申请号：US11693005

申请日：2007-03-29

Applicant: Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

Inventor： Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

IPC: C03C15/00

CPC classification number: H01L21/76834 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3185

Abstract: Methods of controlling the step coverage and pattern loading of a layer on a substrate are provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer. The method comprises depositing a dielectric layer on a substrate having at least one formed feature across a surface of the substrate and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas to provide a desired profile of the dielectric layer on the at least one formed feature. The deposition of the dielectric layer and the etching of the dielectric layer may be repeated for multiple cycles to provide the desired profile of the dielectric layer.

Abstract translation: 提供了控制衬底上的层的阶梯覆盖和图案加载的方法。 电介质层可以是氮化硅，氧化硅或氮氧化硅层。 该方法包括在衬底上沉积介电层，该衬底具有穿过衬底的表面的至少一个形成的特征，并用等离子体从氧气或含卤素气体蚀刻介电层，以在该位置上提供介电层的理想轮廓 至少一个形成的特征。 介电层的沉积和电介质层的蚀刻可以重复多个周期以提供所需的电介质层的轮廓。