公开(公告)号：US07440666B2

公开(公告)日：2008-10-21

申请号：US11154034

申请日：2005-06-16

申请人： David P. Bour ,  Scott W. Corzine

发明人： David P. Bour ,  Scott W. Corzine

IPC分类号： G02B6/10 ,  H01S5/12

CPC分类号： H01S5/12 ,  B82Y20/00 ,  G02B6/131 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

摘要翻译： 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

公开(公告)号：US07352788B2

公开(公告)日：2008-04-01

申请号：US11203699

申请日：2005-08-15

申请人： Scott W. Corzine ,  David P. Bour

发明人： Scott W. Corzine ,  David P. Bour

IPC分类号： H01S5/00

CPC分类号： H01S5/0424 ,  B82Y20/00 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/20 ,  H01S5/34333 ,  H01S2304/12

摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.

摘要翻译： 在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。 有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。 接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。 第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。 还描述了制造VCSEL的方法。

公开(公告)号：US07349456B2

公开(公告)日：2008-03-25

申请号：US11246745

申请日：2005-10-07

申请人： David P. Bour ,  Scott W Corzine

发明人： David P. Bour ,  Scott W Corzine

IPC分类号： H01S5/00

CPC分类号： H01S5/20 ,  B82Y20/00 ,  H01S5/06213 ,  H01S5/1228 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3422 ,  H01S5/34306

摘要： Purely gain-coupled diffraction gratings may be realized for use in QCLs and other edge emitting lasers that lack a typical p-n junction. The periodic, typically heavily n-doped regions of doped diffraction gratings are replaced with p-type regions having significantly lower doping.

摘要翻译： 可以实现纯增益耦合衍射光栅用于QCL和其他缺少典型p-n结的边缘发射激光器。 掺杂衍射光栅的周期性，典型地高n掺杂区域被具有显着更低掺杂的p型区域代替。

公开(公告)号：US07215848B2

公开(公告)日：2007-05-08

申请号：US10768858

申请日：2004-01-29

申请人： Michael R. T. Tan ,  William Trutna ,  David P. Bour ,  Michael H. Leary

发明人： Michael R. T. Tan ,  William Trutna ,  David P. Bour ,  Michael H. Leary

IPC分类号： G02B6/26

CPC分类号： G02B6/29335 ,  G02B6/12007 ,  G02B6/2746 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02F1/0955 ,  G02F2203/15

摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.

摘要翻译： 公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。 光隔离器利用耦合到第一和第二光波导的谐振器。 谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。 谐振器可以在施加的磁场中使用铁磁材料层。 铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。 磁场可以由在铁磁材料层上变化的外部磁场产生。 或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。

公开(公告)号：US07142342B2

公开(公告)日：2006-11-28

申请号：US10453376

申请日：2003-06-02

申请人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

发明人： David P. Bour ,  Ashish Tandon ,  Scott W. Corzine ,  Chaokun Lin

IPC分类号： G02F1/03 ,  G02F1/07

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157

摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

摘要翻译： 电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。 电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层 调制器。 缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。 增加的场强提高了电吸收调制器的消光比。

公开(公告)号：US07033938B2

公开(公告)日：2006-04-25

申请号：US10785747

申请日：2004-02-23

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.

摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

公开(公告)号：US06878970B2

公开(公告)日：2005-04-12

申请号：US10418408

申请日：2003-04-17

申请人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

发明人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

IPC分类号： H01S5/343 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/00 ,  H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105

摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。

公开(公告)号：US06756325B2

公开(公告)日：2004-06-29

申请号：US10140625

申请日：2002-05-07

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。

公开(公告)号：US5982799A

公开(公告)日：1999-11-09

申请号：US818264

申请日：1997-03-17

申请人： David P. Bour ,  Ross D. Bringans

发明人： David P. Bour ,  Ross D. Bringans

IPC分类号： H01S3/23 ,  H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S5/32 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/4087

摘要： A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.

摘要翻译： 描述了多波长激光二极管阵列。 通过量子阱活性区域的填充实现了几十纳米的波长跨度。 通过选择性地将不同量的光损耗引入到阵列元件中来形成多波长阵列，以影响阈值电流密度。 在最小损耗的情况下，激光器以长波长振荡，而具有高损耗的元件将经受更多的带状填充并被迫以较短的波长发射。 为了说明结合这些额外的选择性损耗的结构，描述了2红色波长AlGaInP激光器阵列。 在优选实施例中，通过使脊区域变窄或通过减小其厚度，在SBR型激光器中实现增加的光损耗。 在另一种类型的激光器中，通过非常薄的上包层在靠近的盖或金属层中引起增加的光吸收来实现增加的光损耗。

公开(公告)号：US5465266A

公开(公告)日：1995-11-07

申请号：US268005

申请日：1994-06-28

申请人： David P. Bour ,  Ross D. Bringans

发明人： David P. Bour ,  Ross D. Bringans

IPC分类号： H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/3206 ,  H01S5/34326

摘要： Index-guided semiconductor lasers having buried ridge waveguides which use the optical confinement resulting from the bandgap difference between a semiconductor material grown on the top plane of the ridge and a semiconductor material grown on the ridge's sidewalls. Beneficially AlGaInP is OMVPE formed on a ridged (001) GaAs substrate in which a sidewall of the ridge is at an angle of between 5 degrees and the {111} A plane of the substrate.

摘要翻译： 索引引导半导体激光器具有掩埋脊波导，其使用由在脊的顶部平面上生长的半导体材料与在脊的侧壁上生长的半导体材料之间的带隙差引起的光限制而产生的光限制。 有利地，AlGaInP是在脊（001）GaAs衬底上形成的OMVPE，其中脊的侧壁与衬底的{111} A平面成5度的角度。