摘要:
Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.
摘要:
Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.
摘要:
Various embodiments of the present invention are directed to nanowire-based photodetectors that can be used to convert information encoded in a channel of electromagnetic radiation into a photocurrent encoding the same information. In one embodiment of the present invention, a photodetector comprises a waveguide configured to transmit one or more channels of electromagnetic radiation. The photodetector includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The photodetector also includes a number of nanowires. Each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is embedded in the waveguide.
摘要:
Various embodiments of the present invention are directed to nanowire-based modulators that can be used to encode information in a carrier channel of electromagnetic radiation. In one embodiment of the present invention, the modulator includes a waveguide configured to transmit one or more channels of electromagnetic radiation. The modulator includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The modulator also includes a number of nanowires, wherein each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is operatively coupled to the waveguide. The nanowires modulate the one or more channels when an electrical signal of appreciable magnitude is applied to the first terminal and the second terminal.
摘要:
The etched sidewalls of laterally oxidized VCSEL structures are coated with a dielectric film to inhibit oxidation of the DBR layers during the oxidation process. While oxidation of the DBR mirror layers is not completely eliminated, the number of DBR mirror layers that are oxidized is significantly reduced, thereby reducing the DBR oxide stress.
摘要:
Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.
摘要:
The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.
摘要:
An object to be imaged or detected is illuminated by a single broadband light source or multiple light sources emitting light at different wavelengths. The light is detected by a detector, which includes a light-detecting sensor covered by a hybrid filter.
摘要:
In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.
摘要:
A Raman pump may include a dual output laser configured to output two optical signals; a delay interferometer configured to delay a first of the two optical signals to decorrelate the two optical signals from each other; and a combiner configured to combine the delayed first of the two optical signals and a second of the two optical signals to provide a Raman amplification signal.