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    SEMICONDUCTOR DEVICE
    132.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130119378A1

    公开(公告)日：2013-05-16

    申请号：US13729272

    申请日：2012-12-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama

    IPC: H01L29/24

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/45 ,  H01L29/78645 ,  H03K17/0822

    Abstract: The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.

    Abstract translation: 该半导体器件包括：功率元件，其在不向栅极施加电压时处于导通状态，用于向功率元件的栅极施加第一电压的开关场效应晶体管，以及用于施加电压的开关场效应晶体管 低于功率元件的栅极的第一电压。 开关场效应晶体管具有小的截止电流。

    Semiconductor device
    136.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12199106B2

    公开(公告)日：2025-01-14

    申请号：US18197785

    申请日：2023-05-16

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

    IPC: G11C19/00 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  G11C19/28 ,  H01L27/12 ,  H01L29/786 ,  G09G3/3266 ,  G09G3/3275

    Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

    Logic circuit and semiconductor device
    137.
    发明授权
    Logic circuit and semiconductor device 有权

    公开(公告)号：US12170338B2

    公开(公告)日：2024-12-17

    申请号：US18237431

    申请日：2023-08-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

    IPC: H01L33/16 ,  H01L27/02 ,  H01L27/12 ,  H01L29/786 ,  H01L21/66

    Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

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