公开(公告)号：US09374505B2

公开(公告)日：2016-06-21

申请号：US14864169

申请日：2015-09-24

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H04N5/378 ,  H04N3/14 ,  H04N9/04 ,  H04N5/335 ,  H04N5/374

CPC classification number: H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Abstract translation: 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等等。

公开(公告)号：US09312300B2

公开(公告)日：2016-04-12

申请号：US14524182

申请日：2014-10-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  G01J5/20

CPC classification number: H01L27/14652 ,  G01J3/2803 ,  G01J3/36 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14649 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/30 ,  H01L27/307

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

Abstract translation: 一种固态成像装置，其特征在于，具备：Si基板，在所述Si基板上形成有光电转换从背面侧入射的可见光的光电转换部，以及设置在所述Si基板的下方的基板，其被配置为对从背面入射的红外光进行光电转换 表面

公开(公告)号：US09247172B2

公开(公告)日：2016-01-26

申请号：US14031317

申请日：2013-09-19

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC: H04N5/335 ,  H04N5/378 ,  H01L27/146 ,  H04N5/353 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

公开(公告)号：US20150171131A1

公开(公告)日：2015-06-18

申请号：US14610010

申请日：2015-01-30

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L27/146 ,  H01L23/544

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照射侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现期望的配准。

公开(公告)号：US20140347539A1

公开(公告)日：2014-11-27

申请号：US14453298

申请日：2014-08-06

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14605 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/035272 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

公开(公告)号：US20140014822A1

公开(公告)日：2014-01-16

申请号：US14025172

申请日：2013-09-12

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H04N5/335 ,  H04N5/35581 ,  H04N5/37452

Abstract: A solid-state image pickup device including a plurality of pixels and a scanning unit. Each pixel includes a photoelectric conversion element and a charge accumulation region. The scanning unit is configured to read a first signal from a charge accumulation region. The scanning unit is configured to read a second signal from the charge accumulation region. The first signal corresponds to an accumulation of signal charges during a first period, while the second signal corresponds to another accumulation of signal charges during a second period.

Abstract translation: 包括多个像素的固态图像拾取装置和扫描单元。 每个像素包括光电转换元件和电荷累积区域。 扫描单元被配置为从电荷累积区域读取第一信号。 扫描单元被配置为从电荷累积区域读取第二信号。 第一信号对应于在第一周期期间的信号电荷的累积，而第二信号对应于在第二周期期间信号电荷的另一累加。

公开(公告)号：US10911650B2

公开(公告)日：2021-02-02

申请号：US16672157

申请日：2019-11-01

Applicant: SONY CORPORATION

Inventor： Keiji Mabuchi

IPC: H04N5/225 ,  H04N5/378 ,  H03M1/14 ,  H04N5/3745 ,  H04N5/376 ,  H03M1/56 ,  H03M1/12

Abstract: The present technology relates to a conversion apparatus, an imaging apparatus, an electronic apparatus, and a conversion method that are capable of reducing the scale of a circuit.
The conversion apparatus includes: a comparison unit that compares an input voltage of an input signal and a ramp voltage of a ramp signal that varies with time; and a storage unit that holds a code value when a comparison result from the comparison unit is inverted, the holding of the code value by the storage unit being repeated a plurality of times, to generate a digital signal having a predetermined bit number. The predetermined bit number is divided into high-order bits and low-order bits, the low-order bits are acquired earlier than the high-order bits, and the acquired low-order bits and the high-order bits are combined with each other, to generate the digital signal having the predetermined bit number. The present technology can be applied to a portion of an image sensor, in which AD conversion is performed.

公开(公告)号：US20200350358A1

公开(公告)日：2020-11-05

申请号：US16932544

申请日：2020-07-17

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US10147755B2

公开(公告)日：2018-12-04

申请号：US15784793

申请日：2017-10-16

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Hideshi Abe ,  Hideo Kanbe ,  Shiro Uchida

IPC: H01L27/146 ,  H01L27/30 ,  G01J5/20 ,  G01J3/28 ,  G01J3/36

Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

公开(公告)号：US20180233529A1

公开(公告)日：2018-08-16

申请号：US15953717

申请日：2018-04-16

Applicant: Sony Corporation

Inventor： Yukihiro Kiyota ,  Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/378

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/369 ,  H04N5/378

Abstract: Provided is a solid-state image pickup device including: a plurality of pixels, each of which includes a photoelectric conversion portion and a pixel transistor formed in a front surface side of a substrate, wherein a rear surface side of the substrate is set as a light receiving plane of the photoelectric conversion portion; and an element, which becomes a passive element or an active element, which is disposed in the front surface side of the substrate so as to be superimposed on the photoelectric conversion portion.