公开(公告)号：US20110086513A1

公开(公告)日：2011-04-14

申请号：US12967750

申请日：2010-12-14

申请人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, JR.

发明人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, JR.

IPC分类号： H01L21/04 ,  C23C16/455

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3255

摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

公开(公告)号：US20110024045A1

公开(公告)日：2011-02-03

申请号：US12905041

申请日：2010-10-14

申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

IPC分类号： H01L21/306

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

摘要翻译： 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。

公开(公告)号：US20110011535A1

公开(公告)日：2011-01-20

申请号：US12839375

申请日：2010-07-19

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： C23F1/08 ,  H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577

摘要： In a plasma processing chamber, a method for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement, which is coupled to the edge ring to provide second RF power to the edge ring. The second RF power being delivered to the edge ring has a frequency of about 20 KHz to about 10 MHz, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate.

摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。 该方法包括向卡盘提供第一RF功率。 该方法还包括提供边缘环RF电压控制装置，其耦合到边缘环以向边缘环提供第二RF功率。 递送到边缘环的第二RF功率具有约20KHz至约10MHz的频率，导致边缘环具有边缘环电位。 该方法还包括在等离子体处理室内产生等离子体以处理衬底，衬底正在被处理，同时边缘环RF电压控制装置被配置为控制到边缘环的第二RF功率，使得预定的电位差保持在 边缘环和基底。

公开(公告)号：US20100252199A1

公开(公告)日：2010-10-07

申请号：US12533984

申请日：2009-07-31

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Akira Koshiishi ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Akira Koshiishi ,  Andreas Fischer

IPC分类号： H01L21/306 ,  C23C16/513

CPC分类号： H01L21/2633 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32532 ,  H01J37/32577

摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

摘要翻译： 一种与气体一起使用的等离子体处理系统。 等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。 气体输入端口可操作以在第一电极和第二电极之间提供气体。 电源可操作地从第一电极和第二电极之间的气体点燃等离子体。 无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。 无源射频电路包括与电感器并联布置的电容器。

公开(公告)号：US20100251529A1

公开(公告)日：2010-10-07

申请号：US12820020

申请日：2010-06-21

申请人： Andreas Fischer ,  Rajinder Dhindsa

发明人： Andreas Fischer ,  Rajinder Dhindsa

IPC分类号： B23P6/00

CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

摘要翻译： 提供了一种用于配置等离子体处理室的方法，用于防止在限制的等离子体维持区域内的衬底处理期间发生等离子体非约束事件。 限定的等离子体维持区域由围绕电极的底部的一组限制环所限定。 该方法包括确定在处理期间在等离子体处理室中产生的等离子体的最坏情况德拜长度。 该方法还包括执行调节任何一对相邻约束环之间的间隙中的至少一个，并且添加至少一个附加限制环以确保任何一对相邻约束环之间的间隙小于最坏情况德拜长度。

公开(公告)号：US07749353B2

公开(公告)日：2010-07-06

申请号：US11525602

申请日：2006-09-21

申请人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric A. Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

发明人： Camelia Rusu ,  Rajinder Dhindsa ,  Eric A. Hudson ,  Mukund Srinivasan ,  Lumin Li ,  Felix Kozakevich

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

摘要翻译： 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。 向处理室提供蚀刻剂气体。 提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

公开(公告)号：US07740736B2

公开(公告)日：2010-06-22

申请号：US11537515

申请日：2006-09-29

申请人： Andreas Fischer ,  Rajinder Dhindsa

发明人： Andreas Fischer ,  Rajinder Dhindsa

IPC分类号： C23F1/00 ,  H01L21/306 ,  B05B5/025 ,  B05C5/02 ,  C23C16/00

CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

摘要： Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

摘要翻译： 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

公开(公告)号：US07732728B2

公开(公告)日：2010-06-08

申请号：US11653869

申请日：2007-01-17

申请人： Rajinder Dhindsa ,  Eric H. Lenz ,  Andy W. DeSepte ,  Lumin Li

发明人： Rajinder Dhindsa ,  Eric H. Lenz ,  Andy W. DeSepte ,  Lumin Li

IPC分类号： B23K10/00

CPC分类号： H01J37/32568 ,  H01J37/32091

摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

摘要翻译： 等离子体处理室包括构造成中和大气负荷的悬臂组件。 该室包括围绕内部区域并具有形成在其中的开口的壁。 悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。 悬臂组件延伸穿过开口，使得一部分位于室外。 所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

公开(公告)号：US20100040768A1

公开(公告)日：2010-02-18

申请号：US12222789

申请日：2008-08-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： C23C16/52

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  H01J37/32724 ,  H01L21/67248

摘要： A temperature-controlled hot edge ring assembly adapted to surround a semiconductor substrate supported in a plasma reaction chamber is provided. A substrate support with an annular support surface surrounds a substrate support surface. A radio-frequency (RF) coupling ring overlies the annular support surface. A lower gasket is between the annular support surface and the RF coupling ring. The lower gasket is thermally and electrically conductive. A hot edge ring overlies the RF coupling ring. The substrate support is adapted to support a substrate such that an outer edge of the substrate overhangs the hot edge ring. An upper thermally conductive medium is between the hot edge ring and the RF coupling ring. The hot edge ring, RF coupling ring and annular support surface can be mechanically clamped. A heating element can be embedded in the RF coupling ring.

摘要翻译： 提供了一种适于围绕支撑在等离子体反应室中的半导体衬底的温度控制的热边缘环组件。 具有环形支撑表面的基板支撑件围绕基板支撑表面。 射频（RF）耦合环覆盖环形支撑表面。 下垫圈在环形支撑表面和RF联接环之间。 下垫圈是导电和导电的。 热边缘环覆盖RF耦合环。 衬底支撑件适于支撑衬底，使得衬底的外边缘突出于热边缘环。 上热传导介质位于热边缘环和RF耦合环之间。 热边缘环，RF耦合环和环形支撑表面可以机械夹紧。 加热元件可嵌入RF耦合环中。

公开(公告)号：US20090149028A1

公开(公告)日：2009-06-11

申请号：US12237179

申请日：2008-09-24

申请人： Alexei Marakhtanov ,  Eric Hudson ,  Rajinder Dhindsa ,  Neil Benjamin

发明人： Alexei Marakhtanov ,  Eric Hudson ,  Rajinder Dhindsa ,  Neil Benjamin

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32532 ,  H01J37/3266 ,  H01J37/32669 ,  H01J2237/332 ,  H01J2237/334

摘要： A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.

摘要翻译： 提供具有用于处理衬底的等离子体处理室的电容耦合等离子体（CCP）处理系统。 电容耦合等离子体（CCP）处理系统包括用于处理衬底的上电极和下电极，其在等离子体处理期间设置在下电极上。 电容耦合等离子体（CCP）处理系统还包括电感线圈布置阵列，其被配置为在上电极和下电极之间的间隙中感应维持等离子体。