公开(公告)号：US20140080289A1

公开(公告)日：2014-03-20

申请号：US14029225

申请日：2013-09-17

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Nao Hattori

IPC分类号： H01L21/322

CPC分类号： H01L21/322 ,  H01L21/268 ,  H01L21/3221

摘要： Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer.

摘要翻译： 本文公开了一种在其表面上形成有器件的半导体晶片的背面上形成用于捕获金属离子的吸杂层的方法。 该方法包括用脉冲宽度对应于10〜230nm的热扩散长度的脉冲激光束照射半导体晶片的背面，从而形成吸气层。

公开(公告)号：US20140054609A1

公开(公告)日：2014-02-27

申请号：US13785192

申请日：2013-03-05

申请人： CREE, INC.

发明人： Albert Augustus Burk ,  Michael O'Loughlin

IPC分类号： H01L21/322 ,  H01L29/32

CPC分类号： H01L21/3221 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L29/1608 ,  H01L29/32

摘要： Large high-quality epitaxial wafers are disclosed. Embodiments of the invention provide silicon carbide epitaxial wafers with low basal plane dislocation (BPD) densities. In some embodiments, these wafers are of the 4H polytype. These wafers can be at least about 100 mm in diameter and have an epitaxial layer from about 1 micron to about 300 microns thick. In some embodiments the wafers include an epitaxial stack with a buffer layer and a drift layer and the (BPD) density in the drift layer is less than about 2 cm−2. A wafer according to embodiments of the invention can be made by placing an SiC substrate wafer in a reactor and using a facile step flow to cause a majority of ad-atoms to be coincident with an edge or kink of an atomic step on a surface of the SiC substrate wafer.

摘要翻译： 公开了大型高品质外延晶片。 本发明的实施例提供具有低基面位错（BPD）密度的碳化硅外延片。 在一些实施例中，这些晶片是4H多型。 这些晶片的直径可以至少为约100mm，并具有约1微米至约300微米厚的外延层。 在一些实施例中，晶片包括具有缓冲层和漂移层的外延堆叠，并且漂移层中的（BPD）密度小于约2cm -2。 根据本发明的实施例的晶片可以通过将SiC衬底晶片放置在反应器中并使用简单的步骤流来使得大部分的原子与原子台阶的边缘或扭结一致， SiC衬底晶片。

公开(公告)号：US08629044B2

公开(公告)日：2014-01-14

申请号：US13016236

申请日：2011-01-28

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L21/322

摘要： An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized.

公开(公告)号：US08551824B2

公开(公告)日：2013-10-08

申请号：US13029148

申请日：2011-02-17

申请人： Shunpei Yamazaki ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Junichi Koezuka

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/331 ,  H01L21/322

CPC分类号： H01L21/385 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

摘要翻译： 在包括氧化物半导体层的晶体管中，形成与氧化物半导体层接触的氧化物绝缘层。 然后，通过氧化物绝缘层将氧引入（添加）到氧化物半导体层，并进行热处理。 通过氧气引入和热处理的这些步骤，有意地从氧化物半导体层除去诸如氢，水分，羟基或氢化物的杂质，使得氧化物半导体层被高度纯化。

公开(公告)号：US20130228903A1

公开(公告)日：2013-09-05

申请号：US13865691

申请日：2013-04-18

申请人： INFINEON TECHNOLOGIES AUSTRIA AG

发明人： Gerhard Schmidt ,  Josef Bauer

IPC分类号： H01L21/322 ,  H01L29/36

CPC分类号： H01L29/167 ,  H01L21/26513 ,  H01L21/322 ,  H01L21/3221 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/872

摘要： Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

公开(公告)号：US20130221497A1

公开(公告)日：2013-08-29

申请号：US13883480

申请日：2011-10-31

申请人： Xavier Baillin

发明人： Xavier Baillin

IPC分类号： H01L21/322 ,  H01L23/26

CPC分类号： H01L21/3221 ,  B81C1/00285 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/036 ,  H01L21/50 ,  H01L23/10 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the first stack into contact with the second stack and performing thermocompression, the layers of the first and of the second getter material being arranged between the first and the second support, at a temperature greater than or equal to a lowest temperature among thermal activation temperatures of the first and of the second getter material, to bond the layers of the first and second getter materials together.

摘要翻译： 一种用于制造具有吸气材料掩埋层的衬底的方法，包括：制备包括一层第一吸气剂材料的第一堆叠，其布置在第一支撑件上; 制造第二堆叠，其包括布置在第二支撑件上的第二吸气剂材料层; 并且使所述第一叠层与所述第二堆叠接触并进行热压，所述第一和第二吸气材料的层被布置在所述第一和第二载体之间，其温度大于或等于热活化之间的最低温度 第一和第二吸气剂材料的温度，将第一和第二吸气剂材料的层粘合在一起。

公开(公告)号：US08492248B2

公开(公告)日：2013-07-23

申请号：US13040302

申请日：2011-03-04

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： H01L21/322

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78621

摘要： A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer.

摘要翻译： 用离子照射单晶半导体衬底的表面以形成受损区域，在单晶半导体衬底的表面上形成绝缘层，并且使具有绝缘表面的衬底的表面与 绝缘层的表面，以将具有绝缘表面的衬底结合到单晶半导体衬底。 然后，通过进行热处理，在具有绝缘面的基板上形成单晶半导体层，在损伤区域分离单晶半导体基板，对单晶半导体层进行图案化，形成多个岛状半导体层 。 用形成为完全覆盖岛状半导体层的激光束照射其中一个岛状半导体层。

公开(公告)号：US08420512B2

公开(公告)日：2013-04-16

申请号：US12636383

申请日：2009-12-11

申请人： Haruo Nakazawa

发明人： Haruo Nakazawa

IPC分类号： H01L21/322 ,  H01L21/331 ,  H01L21/336 ,  H01L21/00 ,  H01L21/26

CPC分类号： H01L29/7395 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L29/0834 ,  H01L29/66333

摘要： A method for manufacturing a semiconductor device according to the invention irradiates a first pulse laser beam with an irradiation energy density of 1.0 J/cm2 or higher to blow off particles on the surface of wafer in activating an impurity layer positioned at a shallow location from the surface of wafer such as p+-type collector layer in an FS-type IGBT or in an NPT-type IGBT. By irradiating a second laser beam, region, on which particles were, is activated in the same manner as the region, on which particles are not, and p+-type collector layer is formed uniformly. The manufacturing method according to the invention facilitates preventing nonuniform laser beam irradiation from causing in laser annealing and preventing defective devices from causing.

摘要翻译： 根据本发明的制造半导体器件的方法照射具有1.0J / cm 2或更高的照射能量密度的第一脉冲激光束，以在位于晶片表面的浅位置上的杂质层中除去晶片表面上的颗粒 在FS型IGBT或NPT型IGBT中的诸如p +型集电极层的晶片表面。 通过照射第二激光束，以与颗粒不同的区域的相同方式激活颗粒上的区域，并且均匀地形成p +型集电极层。 根据本发明的制造方法有助于防止不均匀的激光束照射引起激光退火并防止有缺陷的装置引起。

公开(公告)号：US08404562B2

公开(公告)日：2013-03-26

申请号：US12894344

申请日：2010-09-30

申请人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

发明人： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC分类号： H01L21/322 ,  H01L21/00 ,  H01L21/31

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

摘要： According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.

摘要翻译： 根据实施例，复合晶片包括具有石墨芯和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US20130069203A1

公开(公告)日：2013-03-21

申请号：US13237671

申请日：2011-09-20

申请人： Janusz Karol Korycinski ,  Wanliang Wen

发明人： Janusz Karol Korycinski ,  Wanliang Wen

IPC分类号： H01L29/32 ,  H01L21/322

CPC分类号： H01L21/3226 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/1203 ,  H01L29/32 ,  H01L29/78

摘要： A silicon on insulater (SOI) wafer is provided. A dielectric layer is formed on an active silicon substrate of the wafer. The dielectric layer is patterned and etched to expose selected portions of the silicon substrate. Impurities are then introduced into the exposed portions of the silicon substrate to act as gettering regions. The dielectric layer is then removed and an epitaxial layer of silicon is grown on the silicon substrate. Trenches are etched in the epitaxial layer of silicon through the gettering regions, partially removing the gettering regions and any contaminants contained therein. Remaining portions of the gettering regions still act as gettering regions during subsequent process steps.

摘要翻译： 提供了一种绝缘硅（SOI）晶圆。 在晶片的有源硅衬底上形成电介质层。 对电介质层进行图案化和蚀刻以暴露硅衬底的选定部分。 然后将杂质引入硅衬底的暴露部分中以用作吸杂区域。 然后去除电介质层，并在硅衬底上生长外延硅层。 通过吸气区域在硅的外延层中蚀刻沟槽，部分地去除吸气区域和其中包含的任何污染物。 吸附区域的剩余部分在后续工艺步骤中仍然作为吸气区域。