公开(公告)号：US20140327496A1

公开(公告)日：2014-11-06

申请号：US13887568

申请日：2013-05-06

Applicant: QUALCOMM INCORPORATED

Inventor： Chengjie Zuo ,  Daeik D. Kim ,  Je-Hsiung Lan ,  Jonghae Kim ,  Mario Francisco Velez ,  Changhan Yun ,  David F. Berdy ,  Robert P. Mikulka ,  Matthew M. Nowak ,  Xiangdong Zhang ,  Puay H. See

IPC: H03H7/46 ,  H03H3/00

CPC classification number: H03H7/461 ,  H03H3/00 ,  H03H7/0115 ,  H03H7/463 ,  Y10T29/49016

Abstract: Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) are disclosed. In one embodiment, the tunable diplexer may be formed by providing one of either a varactor or a variable inductor in the diplexer. The variable nature of the varactor or the variable inductor allows a notch in the diplexer to be tuned so as to select a band stop to eliminate harmonics at a desired frequency as well as control the cutoff frequency of the pass band. By stacking the elements of the diplexer into three dimensions, space is conserved and a variety of varactors and inductors are able to be used.

Abstract translation: 公开了三维（3D）集成电路（IC）（3DIC）中的可调谐双工器。 在一个实施例中，可调谐双工器可以通过在双工器中提供变容二极管或可变电感器之一来形成。 可变电抗器或可变电感器的可变特性允许调谐双工器中的陷波，以便选择频带停止以消除期望频率处的谐波以及控制通带的截止频率。 通过将双工器的元件堆叠成三维空间是保守的，并且可以使用各种变容二极管和电感器。

公开(公告)号：US20140266494A1

公开(公告)日：2014-09-18

申请号：US13829784

申请日：2013-03-14

Applicant: QUALCOMM INCORPORATED

Inventor： Je-Hsiung Lan ,  Chi Shun Lo ,  Jonghae Kim ,  Mario Francisco Velez ,  John H. Hong

IPC: H03H11/28 ,  H01L21/84

CPC classification number: H03H11/28 ,  H01F41/02 ,  H01F2019/085 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/30111 ,  H01L2924/00

Abstract: A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.

Abstract translation: 特定装置包括设置在电介质基板上方的复制电路。 复制电路包括被配置为用作可变电容器或可变电阻器的薄膜晶体管（TFT）。 该装置还包括设置在电介质基板上方并耦合到复制电路的变压器。 变压器配置有助于复制电路和天线之间的阻抗匹配。

公开(公告)号：US20140206105A1

公开(公告)日：2014-07-24

申请号：US14221324

申请日：2014-03-21

Applicant: QUALCOMM Incorporated

Inventor： Jonghae Kim ,  Feng Wang ,  Matthew Michael Nowak

IPC: H01L49/02 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01F27/2804 ,  H01L21/50 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Methods for transformer signal coupling and impedance matching for flip-chip circuit assemblies are presented. In one embodiment, a method for providing an inductive coupling between dies may include fabricating a first inductor on a first die using a passive process, fabricating a second inductor on a second die using a semiconductor process, and assembling each die so the first and second inductor are configured as a transformer. In another embodiment, a method for matching impedance in an RF circuit fabricated using flip-chip techniques may include passing an RF input signal through a first inductor formed using a passive process, inducing a time varying magnetic flux in proximity to a second inductor formed using an active process, and passing an RF signal induced by the time varying magnetic flux through the second inductor.

Abstract translation: 提出了倒装芯片电路组件的变压器信号耦合和阻抗匹配方法。 在一个实施例中，用于在管芯之间提供电感耦合的方法可以包括使用无源工艺在第一管芯上制造第一电感器，使用半导体工艺在第二管芯上制造第二电感器，以及将每个管芯组装成第一和第二 电感器被配置为变压器。 在另一个实施例中，用于使用倒装芯片技术制造的RF电路中的阻抗匹配的方法可以包括将RF输入信号传递通过使用无源过程形成的第一电感器，从而引起接近第二电感器的时变磁通量，所述第二电感器使用 激活过程，并且将由时变磁通感应的RF信号传递通过第二电感器。

公开(公告)号：US20140065792A1

公开(公告)日：2014-03-06

申请号：US14076395

申请日：2013-11-11

Applicant: QUALCOMM Incorporated

Inventor： Woo Tag Kang ,  Jonghae Kim

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L27/0805 ,  H01L27/101

Abstract: Methods and devices related to a plurality of high breakdown voltage embedded capacitors are presented. A semiconductor device may include gate material embedded in an insulator, a plurality of metal contacts, and a plurality of capacitors. The plurality of capacitors may include a lower electrode, a dielectric formed so as to cover a surface of the lower electrode, and an upper electrode formed on the dielectric. Further, the plurality of contacts may connect each of the lower electrodes of the plurality of capacitors to the gate material. The plurality of capacitors may be connected in series via the gate material.

Abstract translation: 提出了与多个高击穿电压嵌入式电容器相关的方法和装置。 半导体器件可以包括嵌入绝缘体中的栅极材料，多个金属触点和多个电容器。 多个电容器可以包括下电极，形成为覆盖下电极的表面的电介质和形成在电介质上的上电极。 此外，多个触点可以将多个电容器中的每个下电极连接到栅极材料。 多个电容器可以经由栅极材料串联连接。

公开(公告)号：US20140055214A1

公开(公告)日：2014-02-27

申请号：US13765669

申请日：2013-02-12

Applicant: QUALCOMM INCORPORATED

Inventor： Sanghoon Joo ,  Chi Shun Lo ,  Chengjie Zuo ,  Changhan Hobie Yun ,  Jonghae Kim

IPC: H03H9/70 ,  H03H9/54

CPC classification number: H03H9/54 ,  H03H9/02062 ,  H03H9/02157 ,  H03H9/02259 ,  H03H9/462 ,  H03H9/525 ,  H03H9/568 ,  H03H9/70 ,  H03H2009/02291 ,  H03H2009/02527

Abstract: A multi-mode bandpass filter is described. The bandpass filter includes a first multi-directional vibrating microelectromechanical systems resonator. The bandpass filter also includes a second multi-directional vibrating microelectromechanical systems resonator. The first multi-directional vibrating microelectromechanical systems resonator is in a parallel configuration. The second multi-directional vibrating microelectromechanical systems resonator is in a series configuration.

Abstract translation: 描述了多模式带通滤波器。 带通滤波器包括第一多向振动微机电系统谐振器。 带通滤波器还包括第二多向振动微机电系统谐振器。 第一多向振动微机电系统谐振器处于并联配置。 第二多向振动微机电系统谐振器是串联配置。

公开(公告)号：US12046545B2

公开(公告)日：2024-07-23

申请号：US17093090

申请日：2020-11-09

Applicant: QUALCOMM Incorporated

Inventor： Jonghae Kim ,  Milind Shah ,  Periannan Chidambaram

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L25/18 ,  H01L23/48 ,  H01L27/01

CPC classification number: H01L23/49833 ,  H01L21/481 ,  H01L21/56 ,  H01L23/3107 ,  H01L25/18 ,  H01L23/481 ,  H01L27/01

Abstract: A reconstituted substrate, a packaged assembly comprising a reconstituted substrate, and methods for fabricating a reconstituted substrate. An example reconstituted substrate generally includes multiple package-level substrates implemented with different substrate technologies and held together. An example method for fabricating a reconstituted substrate generally includes forming multiple package-level substrates implemented with different substrate technologies, arranging the multiple package-level substrates, and adding a material to hold the multiple package-level substrates together.

公开(公告)号：US12040268B2

公开(公告)日：2024-07-16

申请号：US17830196

申请日：2022-06-01

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung Lan ,  Jonghae Kim ,  Kai Liu ,  Nosun Park

IPC: H01L23/522 ,  H01C7/00 ,  H01C17/075 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01C7/006 ,  H01C17/075 ,  H01L23/5226 ,  H01L23/66 ,  H01L28/10 ,  H01L28/24 ,  H01L2223/6672

Abstract: An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.

公开(公告)号：US11984874B2

公开(公告)日：2024-05-14

申请号：US17409282

申请日：2021-08-23

Applicant: QUALCOMM Incorporated

Inventor： Ranadeep Dutta ,  Jonghae Kim ,  Je-Hsiung Lan

IPC: H03H9/64 ,  H03H3/10 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10

CPC classification number: H03H9/6406 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/059 ,  H03H9/1071

Abstract: Surface acoustic wave (SAW) filter packages employing an enhanced thermally conductive cavity frame for heat dissipation, and related fabrication methods are disclosed. The SAW filter package also includes a cavity frame comprising a perimeter structure and a cavity inside the perimeter structure coupled to a substrate of a piezoelectric material that contains interdigital transducers (IDTs). A cap substrate is disposed on the perimeter structure of the cavity frame to enclose an air cavity inside the perimeter structure between a substrate and the cap substrate. In exemplary aspects, to effectively dissipate heat generated in the SAW filter package to maintain the desired performance of the SAW filter, the cavity frame is comprised of a material that has an enhanced thermal conductivity. The heat generated in the SAW filter package can more effectively be dissipated, particularly at edges and corners of the cavity frame where hot spots can particularly occur.

公开(公告)号：US20240038439A1

公开(公告)日：2024-02-01

申请号：US17815784

申请日：2022-07-28

Applicant: QUALCOMM Incorporated

Inventor： Kai Liu ,  Jui-Yi Chiu ,  Nosun Park ,  Je-Hsiung Lan ,  Jonghae Kim ,  Periannan Chidambaram

IPC: H01F27/28 ,  H01L23/498 ,  H01L49/02 ,  H01L25/16 ,  H01F41/064

CPC classification number: H01F27/2866 ,  H01L23/49861 ,  H01L23/49838 ,  H01L28/10 ,  H01L25/16 ,  H01F41/064 ,  H01F27/24

Abstract: Inductor packages employing wire-bonds over a lead frame to form integrated inductor(s), and related integrated circuit (IC) packages and fabrication methods. The inductor package includes one or more integrated inductors each formed from leads of a lead frame coupled together in a pattern through wire bonds to foil a coil(s). An overmold material is formed over the lead frame with the coil(s) formed from the wire-bonded leads to form the inductor package. The overmold material can include a magnetic material to further increase the inductance of the integrated inductor(s). The inductor package can be mounted to a package substrate of an IC package to provide an inductor(s) for a circuit in the IC package. By using a lead frame to form an inductor package, fabrication processes used to form lead frames can also be used to form the inductor package as a less complex, lower cost manufacturing method.

公开(公告)号：US11862367B2

公开(公告)日：2024-01-02

申请号：US17643685

申请日：2021-12-10

Applicant: QUALCOMM Incorporated

Inventor： Jonghae Kim ,  Sang-June Park ,  Je-Hsiung Lan ,  Ranadeep Dutta

IPC: H01C7/00

CPC classification number: H01C7/006

Abstract: Disclosed is a sheet resistor designed to operate in a high frequency environment. Unlike conventional sheet resistors, the equivalent series inductance (ESL) is minimized or even eliminated altogether when using the designed sheet resistor. As a result, better signal isolation can be achieved.