公开(公告)号：US08395155B2

公开(公告)日：2013-03-12

申请号：US12929453

申请日：2011-01-26

Applicant: Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

Inventor： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

IPC: H01L29/10

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78696

Abstract: Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.

Abstract translation: 薄膜晶体管（TFT）及其制造方法。 TFT可以包括在沟道的表面上并与源极和漏极间隔开的浮动沟道，以及形成在浮动沟道上并被设计成确定浮动沟道与源极或漏极之间的距离的绝缘层。

公开(公告)号：US08383317B2

公开(公告)日：2013-02-26

申请号：US11798023

申请日：2007-05-09

Applicant: Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

Inventor： Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

IPC: C07D303/12

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/17 ,  C08K3/041 ,  C08K9/04 ,  C09D7/70 ,  C09D109/06 ,  C09D129/04 ,  G03F7/0382 ,  Y10S977/746 ,  Y10S977/753 ,  Y10S977/842 ,  Y10T428/24893 ,  Y10T428/24994

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract translation: 本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性 碳纳米管到光刻工艺或热固化工艺。 根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。

公开(公告)号：US08378342B2

公开(公告)日：2013-02-19

申请号：US12659837

申请日：2010-03-23

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract translation: 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US20130034708A1

公开(公告)日：2013-02-07

申请号：US13565943

申请日：2012-08-03

Applicant: Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

Inventor： Myung-kwan Ryu ,  Jong-baek Seon ,  Sang-yoon Lee

IPC: B05C11/00 ,  B32B7/02 ,  B05D5/12

CPC classification number: H01L21/6715 ,  H01L21/67098 ,  Y10T428/24942 ,  Y10T428/265

Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 Å to about 20,000 Å and a refractive index in a range of about 1.85 to about 2.0.

Abstract translation: 制备薄膜的方法包括在基材上涂覆薄膜形成组合物，并在低于760托的压力下对涂覆的薄膜形成组合物进行热处理。 该薄膜包括厚度在大于大至大约20,000范围内的折射率在约1.85至约2.0范围内的致密层。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

Inventor： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC: H01L21/336

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08268316B2

公开(公告)日：2012-09-18

申请号：US11908249

申请日：2006-03-10

Applicant: Hyo Jeong Hong ,  Kyung Soo Inn ,  Nam Kyu Lim ,  Jung Whan Kim ,  Keun Soo Kim ,  Sang Yoon Lee ,  Se Yeon Kim ,  Hyun Jung Kang ,  Mee Sook Oh

Inventor： Hyo Jeong Hong ,  Kyung Soo Inn ,  Nam Kyu Lim ,  Jung Whan Kim ,  Keun Soo Kim ,  Sang Yoon Lee ,  Se Yeon Kim ,  Hyun Jung Kang ,  Mee Sook Oh

IPC: A61K39/40

CPC classification number: C07K16/1278 ,  A61K2039/505 ,  C07K2317/24 ,  C07K2317/34 ,  C07K2317/565 ,  C07K2317/567 ,  C07K2317/76 ,  C07K2317/77

Abstract: Disclosed is a monoclonal antibody having very high affinity to anthrax toxin and potent toxin-neutralizing activity. Also disclosed are a composition for neutralizing anthrax toxin comprising the antibody and a kit for detecting anthrax toxin.

Abstract translation: 公开了对炭疽毒素具有非常高的亲和力和有效的毒素中和活性的单克隆抗体。 还公开了用于中和包含抗体的炭疽毒素的组合物和用于检测炭疽毒素的试剂盒。

公开(公告)号：US20120223288A1

公开(公告)日：2012-09-06

申请号：US13295620

申请日：2011-11-14

Applicant: Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

IPC: H01L29/66 ,  B82Y99/00

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/775 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0554 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0579 ,  H01L51/424 ,  Y02E10/549 ,  Y02P70/521

Abstract: An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).

Abstract translation: 示例性实施例涉及包括沟道层的晶体管。 晶体管的沟道层可以包括在垂直方向上彼此间隔开的多个单位层。 每个单元层可以包括在水平方向上彼此间隔开的多个单位通道。 每个单元层中的单位通道可以形成条纹图案。 每个单位通道可以包括多个纳米结构。 每个纳米结构可以具有纳米管或纳米线结构，例如碳纳米管（CNT）。

公开(公告)号：US08198789B2

公开(公告)日：2012-06-12

申请号：US12862919

申请日：2010-08-25

Applicant: Duk-Hyun Choi ,  Jae-Young Choi ,  Sang-Yoon Lee ,  Sang-Woo Kim

Inventor： Duk-Hyun Choi ,  Jae-Young Choi ,  Sang-Yoon Lee ,  Sang-Woo Kim

IPC: H01L41/08

CPC classification number: H02N2/18 ,  H01L41/0478 ,  H01L41/113 ,  H01L41/183 ,  H01L41/31 ,  H01L41/37 ,  H01L51/0032 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49194

Abstract: Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy.

Abstract translation: 公开了一种用于产生电能的装置，包括： 第一电极和与第一电极间隔开的第二电极，以及设置在第一电极和第二电极之间的能量产生层，其中能量产生层包括光电转换层和多个压电纳米线，其中当 外力施加到第一电极和第二电极中的至少一个，多个压电纳米线被转换以产生电能。

公开(公告)号：US20120126207A1

公开(公告)日：2012-05-24

申请号：US13166425

申请日：2011-06-22

Applicant: Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

Inventor： Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

IPC: H01L51/10 ,  C08F228/06 ,  H01B1/12

CPC classification number: H01L51/0036 ,  C08G2261/162 ,  C08G2261/1646 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/3243 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/94 ,  C08G2261/95 ,  C08K3/10 ,  C08K3/16 ,  H01L51/0069 ,  H01L51/0541 ,  H01L51/0545 ,  C08L65/00

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Abstract translation: 用于半导体器件的有机组合物包括用于包括结构单元的有机半导体器件的化合物; 以及选自含过渡金属元素的化合物，含镧系元素的化合物及其组合的含金属化合物，由于晶界降低而导致电荷迁移率提高。

公开(公告)号：US20120122275A1

公开(公告)日：2012-05-17

申请号：US13355940

申请日：2012-01-23

Applicant: Bon Won KOO ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

Inventor： Bon Won KOO ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

IPC: H01L51/05

CPC classification number: H01L51/0512 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0558

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract translation: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。