公开(公告)号：US20130210188A1

公开(公告)日：2013-08-15

申请号：US13371303

申请日：2012-02-10

申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

IPC分类号： H01L21/268 ,  B23K26/02

CPC分类号： H01L21/268 ,  G01B11/14 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.

摘要翻译： 一种用于减少条纹图案的方法，包括从激光退火背面照射图像传感器晶片的背面接收散射光信号，基于散射光信号产生背面图像，确定激光器的传感器阵列的边缘之间的距离 退火背面照射的图像传感器晶片和激光束的相邻边界，并且如果距离小于预定值则重新校准激光束。

公开(公告)号：US20130203199A1

公开(公告)日：2013-08-08

申请号：US13365043

申请日：2012-02-02

申请人： Xin-Hua Huang ,  Ping-Yin Liu ,  Li-Cheng Chu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

发明人： Xin-Hua Huang ,  Ping-Yin Liu ,  Li-Cheng Chu ,  Yuan-Chih Hsieh ,  Lan-Lin Chao ,  Chun-Wen Cheng ,  Chia-Shiung Tsai

IPC分类号： H01L21/52 ,  B23K31/02

CPC分类号： B23K20/002 ,  B23K20/023

摘要： A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.

摘要翻译： 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度，并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后，施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后，施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。

公开(公告)号：US08445380B2

公开(公告)日：2013-05-21

申请号：US13481550

申请日：2012-05-25

申请人： Yuan-Chih Hsieh ,  Richard Chu ,  Ming-Tung Wu ,  Martin Liu ,  Lan-Lin Chao ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Richard Chu ,  Ming-Tung Wu ,  Martin Liu ,  Lan-Lin Chao ,  Chia-Shiung Tsai

IPC分类号： H01L21/44

CPC分类号： H01L23/5384 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a method for forming a via structure includes forming a via in a semiconductor substrate, wherein via sidewalls of the via are defined by the semiconductor substrate; forming a dielectric layer on the via sidewalls; removing the dielectric layer from a portion of the via sidewalls; and forming a conductive layer to fill the via, wherein the conductive layer is disposed over the dielectric layer and the portion of the via sidewalls. In an example, the dielectric layer is an oxide layer.

摘要翻译： 本公开提供了通孔结构及其制造方法的各种实施例。 在一个实例中，用于形成通孔结构的方法包括在半导体衬底中形成通孔，其中通孔的通孔侧壁由半导体衬底限定; 在所述通孔侧壁上形成介电层; 从所述通孔侧壁的一部分去除所述介电层; 以及形成导电层以填充所述通孔，其中所述导电层设置在所述电介质层和所述通孔侧壁的所述部分之上。 在一个实例中，电介质层是氧化物层。

公开(公告)号：US20130113061A1

公开(公告)日：2013-05-09

申请号：US13290733

申请日：2011-11-07

申请人： Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

发明人： Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/1463 ,  H01L21/02129 ,  H01L21/223 ,  H01L21/2255 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/09

摘要： Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

公开(公告)号：US20130099355A1

公开(公告)日：2013-04-25

申请号：US13280075

申请日：2011-10-24

申请人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

发明人： Ping-Yin Liu ,  Xin-Hua Huang ,  Hsin-Ting Huang ,  Yuan-Chih Hsieh ,  Jung-Huei Peng ,  Lan-Lin Chao ,  Chia-Shiung Tsai ,  Chun-Wen Cheng

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： B81B7/0058 ,  B81B3/0005 ,  B81B3/0021 ,  B81C1/00269 ,  B81C1/00793 ,  B81C2201/053 ,  B81C2203/0109 ,  H01G5/16 ,  H01L28/60

摘要： A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer

公开(公告)号：US20120258564A1

公开(公告)日：2012-10-11

申请号：US13079995

申请日：2011-04-05

申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

IPC分类号： H01L31/18 ,  H01L21/306 ,  H01L21/00 ,  H01L21/304

CPC分类号： H01L27/1464 ,  H01L27/14687 ,  H01L27/14698 ,  Y10T29/41

摘要： The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.

摘要翻译： 本公开提供了一种方法的实施例。 该方法包括提供具有正面和背面的半导体衬底，其中半导体衬底的前侧包括多个背面照明成像传感器; 从前侧将载体衬底接合到半导体衬底; 从背面稀释半导体衬底; 从背面对半导体衬底进行离子注入; 从背面对半导体衬底进行激光退火处理; 然后从背面对半导体基板进行研磨处理。

公开(公告)号：US08273625B2

公开(公告)日：2012-09-25

申请号：US12757172

申请日：2010-04-09

申请人： Ming-Huei Shen ,  Tsun-Kai Tsao ,  Shih-Chang Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai

发明人： Ming-Huei Shen ,  Tsun-Kai Tsao ,  Shih-Chang Liu ,  Chi-Hsin Lo ,  Chia-Shiung Tsai

IPC分类号： H01L21/336

CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/7881

摘要： A semiconductor structure is provided. The semiconductor structure includes a first floating gate on the semiconductor substrate, the floating gate having a concave side surface; a first control gate on the first floating gate; a first spacer adjacent to the first control gate; a first word line adjacent a first side of the first floating gate with a first distance; and an erase gate adjacent a second side of the first floating gate with a second distance less than the first distance, the second side being opposite the first side.

摘要翻译： 提供半导体结构。 半导体结构包括半导体衬底上的第一浮置栅极，浮置栅极具有凹面侧面; 第一个浮动门上的第一个控制门; 与所述第一控制栅极相邻的第一间隔件; 与所述第一浮动栅极的第一侧相邻的第一字线，具有第一距离; 以及与所述第一浮动栅极的第二侧相邻的擦除栅极，其具有小于所述第一距离的第二距离，所述第二侧与所述第一侧相对。

公开(公告)号：US20120149176A1

公开(公告)日：2012-06-14

申请号：US12964994

申请日：2010-12-10

申请人： Chi-Ming Chen ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Ho-Yung David Hwang

发明人： Chi-Ming Chen ,  Chung-Yi Yu ,  Chia-Shiung Tsai ,  Ho-Yung David Hwang

IPC分类号： H01L21/20 ,  C23C16/34

CPC分类号： C23C16/303 ,  C23C16/4401 ,  C23C16/54 ,  C23C16/56

摘要： Provided is an apparatus. The apparatus includes: a first deposition component that is operable to form a compound over a semiconductor wafer, the compound including at least one of: a III-family element and a V-family element; a second deposition component that is operable to form a passivation layer over the compound; and a transfer component that is operable to move the semiconductor wafer between the first and second deposition components, the transfer component enclosing a space that contains substantially no oxygen and substantially no silicon; wherein the loading component, the first and second deposition components, and the transfer component are all integrated into a single fabrication tool.

摘要翻译： 提供了一种装置。 该装置包括：第一沉积部件，其可操作以在半导体晶片上形成化合物，所述化合物包括III族元素和V族元素中的至少一种; 第二沉积组分，其可操作以在所述化合物上形成钝化层; 以及可操作以在所述第一和第二沉积部件之间移动所述半导体晶片的转移部件，所述转移部件包围基本上不含氧且基本上不含硅的空间; 其中装载部件，第一和第二沉积部件以及传送部件都被集成到单个制造工具中。

公开(公告)号：US20120091549A1

公开(公告)日：2012-04-19

申请号：US12903871

申请日：2010-10-13

申请人： Shih Pei Chou ,  Shih-Chang Liu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

发明人： Shih Pei Chou ,  Shih-Chang Liu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14685

摘要： Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括形成在基板中的像素。 图像传感器装置包括嵌入在基板上的透明层中的第一微透镜。 第一微透镜具有具有角尖的第一上表面。 图像传感器装置包括位于透明层上方的滤色器。 图像传感器装置包括形成在滤色器上的第二微透镜。 第二微透镜具有第二上表面，其具有近似圆形的轮廓。 像素，第一微透镜，滤色器和第二微透镜在垂直方向上至少部分地彼此对准。

公开(公告)号：US20120080761A1

公开(公告)日：2012-04-05

申请号：US12898408

申请日：2010-10-05

申请人： Yuan-Chih Hsieh ,  Richard Chu ,  Ming-Tung Wu ,  Martin Liu ,  Lan-Lin Chao ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Richard Chu ,  Ming-Tung Wu ,  Martin Liu ,  Lan-Lin Chao ,  Chia-Shiung Tsai

IPC分类号： H01L29/84 ,  H01L21/768 ,  H01L21/50 ,  H01L23/48

CPC分类号： H01L23/5384 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate wafer, a dielectric layer overlying the substrate wafer, a patterned conductor layer in the dielectric layer, and a first barrier layer overlying the conductor layer. A silicon top wafer is bonded to the dielectric layer. A via is formed through the top wafer and a portion of the dielectric layer to the first barrier layer. A sidewall dielectric layer is formed along inner walls of the via, adjacent the top wafer to a distance below an upper surface of the top wafer, forming a sidewall dielectric layer shoulder. A sidewall barrier layer is formed inward of the sidewall dielectric layer, lining the via from the first barrier layer to the upper surface of the top wafer. A conductive layer fills the via and a top barrier layer is formed on the conductive layer, the sidewall barrier layer, and the top wafer.

摘要翻译： 半导体器件包括衬底晶片，覆盖衬底晶片的电介质层，电介质层中的图案化导体层和覆盖导体层的第一势垒层。 硅顶片结合到电介质层。 通孔通过顶部晶片和介电层的一部分形成到第一阻挡层。 侧壁电介质层沿通孔的内壁形成，与顶部晶片相邻，距离顶部晶片的上表面一定距离，形成侧壁电介质层的肩部。 在侧壁电介质层的内侧形成侧壁阻挡层，将通孔从第一阻挡层衬套到顶部晶片的上表面。 导电层填充通孔，并且在导电层，侧壁阻挡层和顶部晶片上形成顶部阻挡层。