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1924 records (took 0.039 seconds)

    DEVICE FOR GENERATING AN ION BEAM WITH MAGNETIC FILTER
    182.
    发明申请
    DEVICE FOR GENERATING AN ION BEAM WITH MAGNETIC FILTER 有权
    用于产生带有磁性滤波器的离子束的装置

    公开(公告)号：US20120018648A1

    公开(公告)日：2012-01-26

    申请号：US13063742

    申请日：2009-09-14

    Applicant: Jacques Gierak ,  Ralf Jede

    Inventor： Jacques Gierak ,  Ralf Jede

    IPC: H01J27/02 ,  B01D8/00 ,  H01J3/14

    CPC classification number: H01J27/26 ,  H01J37/08

    Abstract: This device (2) for generating an ion beam (4) including a liquid metal ion source (18) is characterized in that the ion source is surrounded by a cryogenic trap (28) maintained at a low temperature, this cryogenic trap being able to trap volatile chemical species (G) by condensing them before they can reach the ion source.

    Abstract translation: 用于产生包括液体金属离子源（18）的离子束（4）的该装置（2）的特征在于，离子源被保持在低温的低温阱（28）包围，该低温阱能够 挥发性化学物质（G）通过在它们到达离子源之前冷凝来捕获挥发性化学物质（G）。

    Ion source
    183.
    发明申请
    Ion source 有权
    离子源

    公开(公告)号：US20120013249A1

    公开(公告)日：2012-01-19

    申请号：US12804277

    申请日：2010-07-19

    Applicant: Manuel A. Jerez

    Inventor： Manuel A. Jerez

    IPC: H01J27/08 ,  H01J61/04 ,  H01J1/88

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/31701

    Abstract: A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.

    Abstract translation: 阴极子组件包括保持器，阴极和套环，其中每个具有可滑动地彼此接合的平滑无螺纹表面。 屏蔽件用于将子组件保持在支撑板中。 阴极从子组件突出到具有在其间形成的曲折路径的电弧室，用于通过等离子体流。

    DEVICE FOR GENERATING AN ION BEAM WITH MAGNETIC FILTER
    185.
    发明申请
    DEVICE FOR GENERATING AN ION BEAM WITH MAGNETIC FILTER 有权
    用于产生带有磁性滤波器的离子束的装置

    公开(公告)号：US20110309264A1

    公开(公告)日：2011-12-22

    申请号：US13063749

    申请日：2009-09-14

    Applicant: Jacques Gierak ,  Ralf Jede

    Inventor： Jacques Gierak ,  Ralf Jede

    IPC: H01J3/26 ,  B01D8/00

    CPC classification number: H01J27/26 ,  H01J37/08

    Abstract: The invention relates to a device (2) for generating an ion beam (4), comprising a support (6), an ion source (18), this ion source having a lower end (8) connected to the support (6) and an upper end (10) opposite the lower end (8), and extraction means (12) for extracting the ions emitted by the source, this extraction means (12) comprising a wall (14) having an opening (16), the opening (16) being arranged close to the upper end (10) of the ion source (18) so as to allow the extracted ions to pass through this opening.This device (2) further includes means (M1, M2) for the generation of a magnetic field (B) capable of generating a magnetic field in the opening (16) of the extraction means, the generated magnetic field (B) being capable of deflecting charged particles (20) attracted by the ion source so that these charged particles do not reach the ion source.

    Abstract translation: 本发明涉及一种用于产生离子束（4）的装置（2），其包括支撑体（6），离子源（18），该离子源具有连接到支撑件（6）的下端（8）和 与下端（8）相对的上端（10）和用于抽出由源发出的离子的提取装置（12），该提取装置（12）包括具有开口（16）的壁（14） （16）布置成靠近离子源（18）的上端（10），以允许提取的离子通过该开口。 该装置（2）还包括用于产生能够在提取装置的开口（16）中产生磁场的磁场（B）的装置（M1，M2），所产生的磁场（B）能够 偏转由离子源吸引的带电粒子（20），使得这些带电粒子不到达离子源。

    Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
    186.
    发明授权
    Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions 失效
    离子注入装置和通过注入硼氢化物簇离子进行半导体制造的方法

    公开(公告)号：US08071958B2

    公开(公告)日：2011-12-06

    申请号：US12268524

    申请日：2008-11-11

    Applicant: Thomas N. Horsky ,  Dale C. Jacobson

    Inventor： Thomas N. Horsky ,  Dale C. Jacobson

    IPC: H01J49/10 ,  H01J49/14 ,  H01J27/02

    CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

    Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

    Abstract translation: 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。

    ION BEAM DEVICE
    187.
    发明申请
    ION BEAM DEVICE 有权
    离子束装置

    公开(公告)号：US20110266465A1

    公开(公告)日：2011-11-03

    申请号：US13144620

    申请日：2010-01-08

    Applicant: Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

    IPC: G01N23/00

    CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

    Abstract: Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

    Abstract translation: 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。

    MOLECULAR ION GENERATION
    188.
    发明申请
    MOLECULAR ION GENERATION 审中-公开
    分子生成

    公开(公告)号：US20110253902A1

    公开(公告)日：2011-10-20

    申请号：US12763652

    申请日：2010-04-20

    Applicant: Ludovic Godet ,  Svetlana Radovanov ,  Christopher R. Hatem

    Inventor： Ludovic Godet ,  Svetlana Radovanov ,  Christopher R. Hatem

    IPC: H01J27/02

    CPC classification number: H01J37/3171 ,  H01J37/08

    Abstract: An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.

    Abstract translation: 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。

    ION SOURCE
    189.
    发明申请
    ION SOURCE 有权
    离子源

    公开(公告)号：US20110248179A1

    公开(公告)日：2011-10-13

    申请号：US13082983

    申请日：2011-04-08

    Applicant: Joseph M. Matesa, Jr. ,  Paul E. Fischione

    Inventor： Joseph M. Matesa, Jr. ,  Paul E. Fischione

    IPC: H01J3/20

    CPC classification number: H01J37/08 ,  H01J27/04 ,  H01J37/3056 ,  H01J2237/061 ,  H01J2237/0815

    Abstract: An ion source is disclosed which utilizes independently powered electrodes that are isolated with a series of insulators. The ion source comprises an anode electrode with a hollow interior, where the anode is disposed between a cathode and an anti-cathode. A magnet or electro-magnet imposes a magnetic field in an axial direction through the bore of the anode. Gas is introduced into the anode area at a controllable pressure. The ion source includes a first voltage differential between the anode and cathode for the production of plasma and a second voltage differential between the anode and the anti-cathode for extraction of ions from the plasma, forming an ion beam, which is preferably of a narrow diameter at low beam energy. In particular, the voltage differential between the anti-cathode and anode is adjusted to control the initial beam divergence of extracted ions. An optional focus electrode with an independent power supply further focuses the ion beam. A final electrode defines the output boundary of the ion source to provide un-perturbed drift of the ions into the vacuum chamber.

    Abstract translation: 公开了一种离子源，其利用与一系列绝缘体隔离的独立供电的电极。 离子源包括具有中空内部的阳极电极，其中阳极设置在阴极和反阴极之间。 磁体或电磁铁通过阳极的孔沿轴向施加磁场。 气体以可控的压力被引入阳极区域。 离子源包括用于产生等离子体的阳极和阴极之间的第一电压差和用于从等离子体提取离子的阳极和反阴极之间的第二电压差，形成离子束，其优选地为窄 直径在低光束能量。 特别地，调整反阴极和阳极之间的电压差以控制提取的离子的初始光束发散。 具有独立电源的可选聚焦电极进一步聚焦离子束。 最终电极定义了离子源的输出边界，以提供离子到真空室中的无扰动漂移。

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