公开(公告)号：US20040244692A1

公开(公告)日：2004-12-09

申请号：US10454428

申请日：2003-06-04

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen ,  Simeon K. S. Ma

IPC: C23C016/00

CPC classification number: H01J37/3023 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171

Abstract: An ion implantation method is disclosed that includes a step of carrying out a built-in early check to ensure accurate and correct operation parameters are employed when the setup operation is started. By applying built-in check processes, the repeatability of ion beam setup processes can be enhanced. The ion beam setup method includes a formula-based searching algorithm to accurately and rapidly determines the atomic mass unit (AMU) using a feedback data other than the beam current. The same formula is used to check for subsystems consistency and reliability to ensure accuracy of the ion beam being set up. The searching algorithm further implements a peaking algorithm to avoid the common pitfalls of misinterpretation of data and achieve an accurate, reliable, and fast tuning with the help of nullTrusty Recipesnull as initial conditions and nullLimits Parametersnull as constraints. In order to enhance and facilitate the human-system interactions, graphic user interface (GUI) is used to minimize human errors and to monitor and to rapidly react to abnormal operation conditions. By reducing the ion beam setup time, it is feasible to shutoff the ion source generation and deflection subsystem during a wafer exchange period. The shutoff operation enables the cost reductions by reducing wastes of materials; manpower and other system resources while increase the overall system productivities.

Abstract translation: 公开了一种离子注入方法，其包括执行内置的早期检查以确保在开始设置操作时采用准确和正确的操作参数的步骤。 通过应用内置的检查过程，可以提高离子束设置过程的重复性。 离子束设置方法包括基于公式的搜索算法，以使用除束电流之外的反馈数据来准确且快速地确定原子质量单位（AMU）。 使用相同的公式来检查子系统的一致性和可靠性，以确保设置离子束的准确性。 搜索算法进一步实现了峰值算法，避免了数据误解的常见缺陷，借助“信任配方”作为初始条件和“限制参数”作为约束，实现了准确，可靠，快速的调优。 为了增强和促进人机系统的相互作用，使用图形用户界面（GUI）来最小化人为错误，并监视和对异常操作条件作出快速反应。 通过减少离子束建立时间，可以在晶片交换期间切断离子源产生和偏转子系统。 关闭操作可以通过减少材料的浪费来降低成本; 人力等系统资源，同时提高整体系统生产力。

公开(公告)号：US20210398722A1

公开(公告)日：2021-12-23

申请号：US17350484

申请日：2021-06-17

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Ching-Shiang Hwang ,  Jyh-Chyuan Jan ,  Hui-Huang Chen ,  Yun-Liang Chu

IPC: H01F7/02

Abstract: The disclosure provides a hybrid magnet structure which includes two dipole magnets assemblies arranged oppositely, and each dipole magnet assembly includes a permanent magnet, two iron cores, and a moveable magnetic field shunt element. The hybrid magnet structure is adapted to focus particle beams of different positions by applying an adjustable gradient magnetic field in the horizontal or vertical direction of the particle beam. By passing the charged particle beams through the gradient magnetic field established between the two dipole magnets, the aspect of focusing the charged particle beam is achieved. In addition, the intensity of the gradient magnetic field can be altered by adjusting the gap between the movable magnetic field shunt element and the permanent magnet, thereby controlling the particle beam size on a specific axis for different energies or masses of the charge particles.

公开(公告)号：US10361059B2

公开(公告)日：2019-07-23

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao Bai ,  Zhimin Wan ,  Donald Wayne Berrian

IPC: H01J37/147 ,  H01J37/317 ,  C23C14/48

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

公开(公告)号：US09852887B2

公开(公告)日：2017-12-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

公开(公告)号：US09824850B2

公开(公告)日：2017-11-21

申请号：US14605985

申请日：2015-01-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/317 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

公开(公告)号：US09748072B2

公开(公告)日：2017-08-29

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Rekha Padmanabhan ,  Xiao Bai ,  Gary N. Cai ,  Ching-I Li ,  Ger-Pin Lin ,  Shao-Yu Hu ,  David Hoglund ,  Robert E. Kaim ,  Kourosh Saadatmand

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

公开(公告)号：US09281162B2

公开(公告)日：2016-03-08

申请号：US14318338

申请日：2014-06-27

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Nicholas R. White ,  Kourosh Saadatmand

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1472 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/057

Abstract: A single bend energy filter for controlling deflection of a charged particle beam is provided. It includes a first array of electrodes and a second array of electrodes to define a beam channel for the charged particle beam to pass through; an unmatched steering electrode among the first array of electrodes for tuning the bend angle of the charged particle beam; and a plurality of electrical biases applied to the first array of electrodes, the second array of electrodes and the unmatched steering electrode, wherein portion or all of the electrodes have different shapes. A method for controlling deflection of a charged particle beam is also provided. Depending on use of an unmatched steering electrode, the bend angle of the charged particle beam may be fine-tuned, so as to effectively control the deflection of the charged particle beam to achieve a centered beam at the wafer plane.

Abstract translation: 提供了用于控制带电粒子束的偏转的单个弯曲能量过滤器。 它包括第一电极阵列和第二电极阵列，以限定用于带电粒子束通过的束通道; 用于调整带电粒子束的弯曲角度的第一电极阵列中的不匹配的转向电极; 以及施加到第一电极阵列，第二电极阵列和不匹配的转向电极的多个电偏压，其中部分或全部电极具有不同的形状。 还提供了一种用于控制带电粒子束的偏转的方法。 根据使用不匹配的转向电极，可以微调带电粒子束的弯曲角度，以便有效地控制带电粒子束的偏转以在晶片平面上实现中心的光束。

公开(公告)号：US09269528B2

公开(公告)日：2016-02-23

申请号：US14490253

申请日：2014-09-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Robert Kaim ,  Charles M. Free ,  David Hoglund ,  Wilhelm P. Platow ,  Kourosh Saadatmand

IPC: G21K5/04 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/30472

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract translation: 提供了一种设置用于离子注入的中等电流带状束的方法。 它包括提供一个供给工艺气体和支撑气体的离子源。 过程离子束与质量分析磁体与支撑气体束分离，并且通过改变离子源气体进料中的工作气体与支持气体的比例来控制过程离子束的强度。 过程光束强度也可以用位于离子源下游的一个或多个机械限流装置来控制。 还提供离子束系统。 该方法可以控制目标在约3uA至约3mA之间的总带状束强度。

公开(公告)号：US09147550B2

公开(公告)日：2015-09-29

申请号：US13692461

申请日：2012-12-03

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Wei-Cheng Lin ,  Zhimin Wan ,  Koulin Hu

IPC: H01J27/00 ,  H01J27/02 ,  H01J37/08

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/082 ,  Y10T137/0329

Abstract: A gas mixture method and apparatus of prolonging lifetime of an ion source for generating an ion beam particularly an ion beam containing carbon is proposed here. By mixing the dopant gas and the minor gas together to generate an ion beam, undesired reaction between the gas species and the ion source can be mitigated and thus lifetime of the ion source can be prolonged. Accordingly, quality of ion beam can be maintained.

Abstract translation: 这里提出了一种用于产生离子束，特别是含有离子束的离子源的寿命延长的气体混合方法和装置。 通过将掺杂气体和次要气体混合在一起以产生离子束，可以减轻气体物质和离子源之间的不期望的反应，从而可以延长离子源的寿命。 因此，可以保持离子束的质量。

公开(公告)号：US09006065B2

公开(公告)日：2015-04-14

申请号：US13648127

申请日：2012-10-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Tzu-Shih Yen ,  Daniel Tang ,  Tsungnan Cheng

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L27/088 ,  H01L27/12 ,  H01L21/762 ,  H01L21/223

CPC classification number: H01L21/2236 ,  H01L29/66803 ,  H01L29/785

Abstract: In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.

Abstract translation: 在等离子体掺杂非平面半导体器件中，获得其上形成有非平面半导体体的衬底。 具有非平面半导体本体的基板可以放置在室中。 等离子体可以在室中形成，等离子体可以含有掺杂离子。 可以产生第一偏置电压以将掺杂剂离子注入到非平面半导体本体的区域中。 可以产生第二偏置电压以将掺杂剂离子注入到相同的区域中。 在一个示例中，第一偏置电压和第二偏置电压可以不同。